SIHL520L-GE3 [VISHAY]
TRANSISTOR 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power;
| 型号： | SIHL520L-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRL520L, SiHL520L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
100
R
DS(on) ()
VGS = 5 V
0.27
• Dynamic dV/dt Rating
Qg (Max.) (nC)
12
3.0
• Repetitive Avalanche Rated
Q
Q
gs (nC)
gd (nC)
• Logic-Level Gate Drive
7.1
• RDS (on) Specified at VGS = 4 V and 5 V
• 175°C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
Configuration
Single
D
I2PAK (TO-262)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
S
D
G
The I2PAK (TO-262) is a through hole power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
I2PAK (TO-262)
SiHL520L-GE3
IRL520LPbF
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SiHL520L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
100
10
V
TC = 25 °C
TC = 100 °C
9.2
Continuous Drain Current
VGS at 5 V
ID
6.5
A
Pulsed Drain Currenta
IDM
36
Linear Derating Factor
0.40
0.025
170
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
EAS
IAR
mJ
A
9.2
Repetiitive Avalanche Energya
EAR
6.0
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
60
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
5.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 , IAS = 9.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91467
S11-1060-Rev. A, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
-
-
°C/W
2.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
100
-
-
V
V/°C
V
VDS Temperature Coefficient
-
1.0
-
0.12
-
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-
-
-
-
-
-
2.0
100
25
VGS
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
=
10 V
nA
-
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
IDSS
μA
-
250
0.27
0.38
-
VGS = 5 V
ID = 5.5 Ab
ID = 4.6 Ab
-
S
RDS(on)
gfs
V
GS = 4 V
-
Forward Transconductance
Dynamic
VDS = 50 V, ID = 5.5 Ab
3.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
490
150
30
-
-
-
VGS = 0 V,
VDS = 25 V,
pF
nC
f = 1.0 MHz, see fig. 5
-
12
3.0
7.1
-
ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = 5 V
-
-
9.8
64
21
27
-
VDD = 50 V, ID = 9.2 A,
ns
nH
A
R
G = 9 , RD = 5.2 , see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Dynamic
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
-
-
-
-
9.2
36
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb
-
-
-
-
2.5
190
1.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
130
0.83
ns
μC
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91467
S11-1060-Rev. A, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91467
S11-1060-Rev. A, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91467
S11-1060-Rev. A, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
-
V
DD
5 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91467
S11-1060-Rev. A, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T
IAS
RG
+
-
VDD
VDS
5 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91467
S11-1060-Rev. A, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?94167.
Document Number: 91467
S11-1060-Rev. A, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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