SIP4280A-1-T1-E3 [VISHAY]
Buffer/Inverter Based Peripheral Driver;型号: | SIP4280A-1-T1-E3 |
厂家: | VISHAY |
描述: | Buffer/Inverter Based Peripheral Driver 驱动 接口集成电路 |
文件: | 总10页 (文件大小:471K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product is End of Life 12/2014
SiP4280A
Vishay Siliconix
Slew Rate Controlled Load Switch
FEATURES
• 1.5 V to 5.5 V Input Voltage range
• Very Low R , typically 80 mΩ (5 V)
APPLICATIONS
• Cellular telephones
• Digital still cameras
• Personal digital assistants (PDA)
• Hot swap supplies
• Notebook computers
DS(ON)
• Slew rate limited turn-on time options
- SiP4280A-1: 1 ms
- SiP4280A-3: 100 µs
• Fast shutdown load discharge option
• Personal communication devices
• Low quiescent current
< 25 nA (typ)
• 4 kV ESD Rating
• 6 pin SOT23 package
DESCRIPTION
The SiP4280A is a P-Channel MOSFET power switch
designed for high-side load switching applications. The
output pass transistor is a P-Channel MOSFET tran-
Both SiP4280A load switch versions operate with an
input voltage ranging from 1.5 V to 5.5 V, making them
ideal for both 3 V and 5 V applications. The SiP4280A
also features an under-voltage lock out which turns the
switch off when an input undervoltage condition exists.
Input logic levels are TTL and 2.5 V to 5.0 V CMOS
compatible. The quiescent supply current is very low,
typically 25 nA. In shutdown mode, the supply current
decreases to less than 1.0 µA.
sistor with typically 80 mΩ R
. The SiP4280A is
DS(ON)
available in two different versions of turn-on times. The
SiP4280A-1 version has a slew rate limited turn-on
time typically of 1 ms. The SiP4280A-3 version has a
slew rate limited turn-on time typically of 100 µs and
additionally offers a shutdown load discharge circuit to
rapidly turn off a load circuit when the switch is dis-
abled.
The SiP4280A is available in a 6 pin SOT23 package
and is specified over - 40 °C to 85 °C temperature
range.
TYPICAL APPLICATION CIRCUIT
VIN
VOUT
VIN
OUT
SiP4280A
CIN
1 µF
COUT
1 µF
ON
ON/OFF
GND
GND
GND
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
www.vishay.com
1
SiP4280A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Steady State
Unit
VIN
VON
VOUT
IMAX
IDM
Supply Input Voltage
Enable Input Voltage
Output Voltage
- 0.3 to 6
- 0.3 to 6
V
- 0.3 to VIN + 0.3
Maximum Switch Current
2.3
6
3
VIN ≥ 2.5
VIN < 2.5
A
Maximum Pulsed Current
IDM
TJ
ΦJA
Junction Temperature
Thermal Resistance
Power Dissipation
- 40 to 150
180
°C
a
SOT23-6L
SOT23-6Lb
°C/W
mW
PD
440
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 5.5 mW/°C above TA = 70 °C.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE all voltages referenced to GND = 0 V
Parameter
Symbol
VIN
Steady State
1.5 to 5.5
Unit
V
Operating Temperature Range
- 40 to 85
°C
SPECIFICATIONS
Limits
Test Conditions Unless Specified
Mina
Typb
Maxa
V
IN = 5 V, TA = - 40 to 85 °C
Unit
Parameter
Symbol
SiP4280A All Versions
Operating Voltage
Quiescent Current
Off Supply Current
Off Switch Current
VIN
IQ
1.5
-
5.5
1
V
ON/OFF = active
-
IQ(OFF)
ISD(OFF)
µA
ON/OFF = inactive, OUT = open
ON/OFF = inactive, VOUT = 0
VIN = 5 V, TA = 25 °C
-
0.01
1
-
0.01
1
-
80
120
130
150
250
-
V
IN = 4.2 V, TA = 25 °C
-
85
RDS(ON)
On-Resistance
mΩ
V
IN = 3 V, TA = 25 °C
-
100
V
IN = 1.8 V, TA = 25 °C
-
160
TCRDS
VIL
On-Resistance Temp-Coefficient
ON/OFF Input Low Voltagec
-
2800
ppm/°C
VIN = 1.8 V to 5.5 V
VIN = 1.5 V to 2.7 V
0.4
-
-
-
-
-
-
-
-
-
-
1.4
2
V
VIH
V
IN = 2.7 V to < 4.2 V
VIN ≥ 4.2 V to 5.5 V
VON/OFF = 5.5 V
ON/OFF Input High Voltage
2.4
1
ISINK
µA
ON/OFF Input Leakage
SiP4280A-1 Version
TD(ON)
TON
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
SiP4280A-3 Version
-
-
-
20
1000
4
40
1500
10
µs
TD(OFF)
TD(ON)
TON
TD(OFF)
RPD
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
ON/OFF = inactive, TA = 25 °C
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
Output Pull-Down Resistance
-
-
-
-
20
100
4
40
150
10
µs
150
250
Ω
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN ≤ 1.5 V see typical ON/OFF threshold curve.
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2
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
SiP4280A
Vishay Siliconix
PIN CONFIGURATION
PIN DESCRIPTION
Pin Number
SOT23-6
Pin Name
VIN
Description
4, 6
3
This pin is the P-Channel MOSFET source connection
Logic high enables the IC; logic low disables the IC
Ground connection
ON/OFF
GND
2, 5
1
OUT
This pin is the P-Channel MOSFET drain connection
SELECTION GUIDE
Slew Rate
(typ)
Active
Pull Down
Part Number
Enable
SiP4280A-1-T1-E3
SiP4280A-3-T1-E3
1 ms
No
Active High
Active High
100 µs
Yes
ORDERING INFORMATION
Part Number
Marking
L4XX
Temperature Range
Package
SOT23-6L
SOT23-6L
SiP4280ADT-1-T1-E3
- 40 °C to 85 °C
SiP4280ADT-3-T1-E3
L6XX
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
www.vishay.com
3
SiP4280A
Vishay Siliconix
TYPICAL CHARACTERISTICS internally regulated, 25 °C unless noted
90
80
70
60
50
40
30
20
10
0
250
230
210
190
170
150
130
110
90
2 A
1 A
500 mA
V
IN
= 5 V
100 mA
2.0
70
V
IN
= 3 V
80
50
1.5
- 40
- 20
0
20
40
60
100
2.5
3.0
3.5
(V)
4.0
4.5
5.0
5.5
V
IN
Temperature (°C)
Quiescent Current vs. Temperature
RDS(ON) vs. Input Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
140
130
120
110
100
90
V = 3 V
V = 5 V
V
IH
V
IL
80
70
60
- 40
- 25
0
25
Temperature (°C)
RDS(ON) vs. Temperature
50
75
85
1.5
2.0
2.5
3.0
3.5
(V)
4.0
4.5
5.0
5.5
V
IN
ON/OFF Threshold vs. Input Voltage
1.0
0.8
0.6
0.4
0.2
0.0
- 40
- 20
0
20
Temperature (°C)
Off Switch Current vs. Temperature
40
60
80
100
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4
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
SiP4280A
Vishay Siliconix
TYPICAL WAVEFORMS
ON/OFF (5 V/div.)
ON/OFF (5 V/div.)
V
OUT
(2 V/div.)
V
OUT
(2 V/div.)
I
IN
(200 mA/div.)
I
IN
(200 mA/div.)
Time (500 µs/div)
Time (5 µs/div)
SiP4280A-1 Turn-On (VIN = 3 V, RLOAD = 6 Ω)
SiP4280A-1 Turn-Off (VIN = 3 V, RLOAD = 6 Ω)
ON/OFF (5 V/div.)
ON/OFF (5 V/div.)
V
OUT
(2 V/div.)
V
OUT
(2 V/div.)
I
IN
(200 mA/div.)
I
IN
(200 mA/div.)
Time (500 µs/div)
Time (5 µs/div)
SiP4280A-1 Turn-On (VIN = 5 V, RLOAD = 10 Ω)
SiP4280A-1 Turn-Off (VIN = 5 V, RLOAD = 10 Ω)
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
www.vishay.com
5
SiP4280A
Vishay Siliconix
TYPICAL WAVEFORMS
ON/OFF (5 V/div.)
ON/OFF (5 V/div.)
V
OUT
(2 V/div.)
V
OUT
(2 V/div.)
I
IN
(200 mA/div.)
I
IN
(200 mA/div.)
Time (50 µs/div)
Time (5 µs/div)
SiP4280A-3 Turn-On (VIN = 3 V, RLOAD = 6 Ω)
SiP4280A-3 Turn-Off (VIN = 3 V, RLOAD = 6 Ω)
ON/OFF (5 V/div.)
ON/OFF (5 V/div.)
V
OUT
(2 V/div.)
V
OUT
(2 V/div.)
I
IN
(200 mA/div.)
I
IN
(200 mA/div.)
Time (5 µs/div)
Time (50 µs/div)
SiP4280A-3 Turn-On (VIN = 5 V, RLOAD = 10 Ω)
SiP4280A-3 Turn-Off (VIN = 5 V, RLOAD = 10 Ω)
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6
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
SiP4280A
Vishay Siliconix
BLOCK DIAGRAM
SiP4280A–3 Version only
SiP4280A Functional Block Diagramm
DETAILED DESCRIPTION
The SiP4280A is a P-Channel MOSFET power
switches designed for high-side slew rate controlled
load switching applications. Once turned on, the slew-
rate control circuitry is activated and current is ramped
in a linear fashion until it reaches the level required for
the output load condition. This is accomplished by first
elevating the gate voltage of the MOSFET up to its
threshold voltage and then by linearly increasing the
gate voltage until the MOSFET becomes fully
enhanced. At this point, the gate voltage is then
quickly increased to the full input voltage to reduce
The SiP4280A-1 version has a modest 1 ms turn on
slew rate feature, which significantly reduces in-rush
current at turned on time and permits the load switch
to be implemented with a small input capacitor, or no
input capacitor at all, saving cost and space. In addi-
tion to a 100 µs minimized slew rate, the SIP4280A-3
features a shutdown output discharge circuit which is
activated at shutdown (when the part is disabled
through the ON/OFF pin) and discharges the output
pin through a small internal resistor hence, turning off
the load.
R
of the MOSFET switch and minimize any
In instances where the input voltage falls below 1.4 V
(typically) the under voltage lock-out circuitry protects
the MOSFET switch from entering the saturation
region or operation by shutting down the chip.
DS(ON)
associated power losses.
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
www.vishay.com
7
SiP4280A
Vishay Siliconix
APPLICATION INFORMATION
table. However, The real limiting factor for the safe
operating load current is the thermal power dissipation
of the package. To obtain the highest power dissipa-
tion the power pad of the device should be connected
to a heat sink on the printed circuit board.
Input Capacitor
While a bypass capacitor on the input is not required,
a 1 µF or larger capacitor for C is recommended in
IN
almost all applications. The Bypass capacitor should
be placed as physically close as possible to the
SiP4280A to be effective in minimizing transients on
the input. Ceramic capacitors are recommended over
tantalum because of their ability to withstand input
current surges from low impedance sources such as
batteries in portable devices.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
T
= 125 °C, the junction-to-ambient thermal
J(MAX)
resistance θJ-A = 180 °C for SOT23-6, and the ambient
temperature, T , which may be formulaically
A
expressed as:
TJ (max) − T
125 − T
140
A
A
P (max)
=
=
θ
J−A
Output Capacitor
It then follows that, assuming an ambient temperature
of 70 °C, the maximum power dissipation will be limited
to about 305 mW for SOT23-6.
A 0.1 µF capacitor or larger across V
recommended to insure proper slew operation. C
may be increased without limit to accommodate any
load transient condition with only minimal affect on the
SiP4280A turn on slew rate time. There are no ESR or
capacitor type requirement.
and GND is
OUT
OUT
In any application, the maximum continuous switch
current is a function two things: the package power dis-
sipation and the R
at the ambient temperature.
DS(ON)
As an example let us calculate the worst-case maxi-
mum load current at T = 70 °C. The worst case
Enable
A
R
at 25 °C occurs at an input voltage of 1.8 V
DS(ON)
The ON/OFF pin is compatible with both TTL and
CMOS logic voltage levels.
and is equal to 250 mΩ. The R
extrapolated from this data using the following formula
at 70 °C can be
DS(ON)
Reverse Voltage Conditions and Protection
R
(at 70 °C) = R (at 25 °C) x (1 + T x ΔT)
DS(ON)
DS(ON)
C
The P-Channel MOSFET pass transistor has an intrin-
sic diode that is reversed biased when the input volt-
Where T is 2090 ppm/°C. Continuing with the calcu-
lation we have
C
age is greater than the output voltage. Should V
OUT
exceed V , this intrinsic diode will become forward
IN
biased and allow excessive current to flow into the IC
R
(at 70 °C) = 250 mΩ x (1 + 0.00209 x (70 °C -
DS(ON)
thru the V
pin and potentially damage the IC
25 °C)) = 278 mΩ
OUT
device. Therefore extreme care should be taken to
prevent V from exceeding V .
The maximum current limit is then determined by
OUT
IN
In conditions where V
diode in parallel with the internal intrinsic diode is
recommended to protect the SiP4280A.
exceeds V a Schottky
IN
OUT
P (max)
I
(max) 〈
LOAD
R
(
)
DS ON
Thermal Considerations
which in case is 1.05 A for SOT23-6. Under the stated
input voltage condition, if the calculated current limit is
exceeded the internal die temperature will rise and
eventually, possibly damage the device.
The SiP4280A is designed to maintain a constant out-
put load current. The internal switch is designed to
operate at 2.3 A of current, as stated in the ABS MAX
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73602
www.vishay.com
8
Document Number: 73602
S-61772–Rev. C, 11-Sep-06
Package Information
www.vishay.com
Vishay Siliconix
Thin SOT-23 : 5- and 6-Lead (Power IC only)
e1
6
5
4
E1
E
1
2
3
b
-B-
4
Pin #1
indetifier
e
0.15 M
-A-
C B A
D
0.17 ref
c
R
R
L
A2
A1
A
Gage plane
Seating plane
Seating plane
L
0.08
C
(L1)
-C-
Notes:
1. Use millimeters as the primary measurement.
2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
3. This part is fully compliant with JEDEC MO-193.
4. Detail of Pin #1 indentifier is optional.
MILLIMETERS
NOM.
INCHES
DIM.
A
MIN.
0.91
0.00
0.85
0.30
0.10
2.85
2.70
1.525
MAX.
1.10
0.10
1.00
0.45
0.20
3.10
2.98
1.70
MIN.
0.036
0.000
0.033
0.012
0.004
0.112
0.106
0.060
NOM.
0.039
MAX.
0.043
0.004
0.039
0.018
0.008
0.122
0.117
0.067
1.00
0.05
A1
A2
b
0.002
0.90
0.035
0.40
0.016
c
0.15
0.006
D
2.95
0.116
E
2.85
0.112
E1
e
1.65
0.065
0.95 BSC
0.40
0.0374 BSC
-
L
0.30
0.50
0.014
0.020
L1
L2
0.60 ref.
0.25 BSC
4°
0.024 BSC
0.010 BSC
4°
0°
4°
8°
0°
4°
8°
1
10°
12°
10°
12°
ECN: E13-1126-Rev. B, 01-Jul-13
DWG: 5926
Revision: 01-Jul-13
Document Number: 72821
1
For technical questions, contact: powerictechsupport@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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