SIR432DP-T1-GE3 [VISHAY]
Trans MOSFET N-CH 100V 8.6A 8-Pin PowerPAK SO T/R;
| 型号： | SIR432DP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Trans MOSFET N-CH 100V 8.6A 8-Pin PowerPAK SO T/R 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiR432DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
28.4
Definition
•
•
•
•
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
0.0306 at VGS = 10 V
0.0327 at VGS = 7.5 V
100
15.5 nC
27.5
Compliant to RoHS Directive 2002/95/EC
PowerPAK SO-8
APPLICATIONS
Primary Side Switch
•
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
S
Bottom View
Ordering Information: SiR432DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
A
VGS
20
T
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
28.4
22.7
8.6b, c
6.9b, c
40
40g
4.2b, c
Continuous Drain Current (TJ = 150 °C)
ID
T
Pulsed Drain Current
IDM
IS
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Avalanche Current
IAS
17
L = 0.1 mH
Single-Pulse Avalanche Energy
EAS
14.5
54
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
34.7
5.0b, c
3.2b, c
PD
Maximum Power Dissipation
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 10 s
Steady State
20
25
°C/W
RthJC
1.8
2.3
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
www.vishay.com
1
SiR432DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
100
V
V
DS Temperature Coefficient
100
mV/°C
VGS(th) Temperature Coefficient
- 8.6
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
2
4
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 100 V, VGS = 0 V
DS = 100 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
40
VGS = 10 V, ID = 8.6 A
0.0255
0.0272
38
0.0306
0.0327
Drain-Source On-State Resistancea
Ω
S
V
GS = 7.5 V, ID = 8.3 A
Forward Transconductancea
Dynamicb
VDS = 15 V, ID = 8.6 A
Ciss
Coss
Crss
Input Capacitance
1170
115
45
21
15.5
5.9
5.4
0.9
12
10
20
8
VDS = 50 V, VGS = 0 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 8.6 A
VDS = 50 V, VGS = 7.5 V, ID = 8.6 A
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
32
24
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
0.2
1.8
20
20
30
16
21
18
27
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
V
DD = 50 V, RL = 7.2 Ω
ID ≅ 6.9 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
14
9
V
DD = 50 V, RL = 7.2 Ω
ID ≅ 6.9 A, VGEN = 7.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
18
8
Drain-Source Body Diode Characteristics
IS
ISM
VSD
trr
TC = 25 °C
IS = 6.9 A
Continuous Source-Drain Diode Current
40
40
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.8
43
80
33
10
1.2
65
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
120
IF = 6.9 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1600
1200
800
400
0
40
V
GS
= 10 V thru 6 V
C
iss
30
20
10
0
V
GS
= 5 V
C
oss
V
GS
= 4 V
C
rss
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
10
8
I
= 8.6 A
V
= 50 V
D
DS
V
DS
= 25 V
6
T
= 125 °C
C
V
DS
= 80 V
4
T
C
= 25 °C
2
T
= - 55 °C
C
0
0
1
2
3
4
5
0
6
12
18
24
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
0.034
2.5
2.1
1.7
1.3
0.9
0.5
I
= 8.6 A
D
V
GS
= 10 V
0.031
0.028
0.025
0.022
V
GS
= 7.5 V
V
GS
= 7.5 V
V
GS
= 10 V
0
10
20
30
40
- 50 - 25
0
T
25
50
75
100 125 150
- Junction Temperature (°C)
J
I
- Drain Current (A)
D
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
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3
SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.5
3.0
2.5
2.0
1.5
100
I
= 250 µA
D
10
T
J
= 150 °C
T
J
= 25 °C
1
0.1
- 50 - 25
0
25
- Temperature (°C)
J
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.090
0.070
0.050
0.030
0.010
250
200
150
100
50
T
= 125 °C
J
T
= 25 °C
9
J
0
4
5
6
7
8
10
0.001
0.01
0.1
1
10
V
GS
- Gate-to-Source Voltage (V)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
10
1
Limited by R
*
DS(on)
100 µs
1 ms
10 ms
100 ms
1 s
0.1
10 s
T
= 25 °C
A
BVDSS
Limited
DC
100
Single Pulse
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
32
24
16
8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
70
60
50
40
30
20
10
0
2.4
1.8
1.2
0.6
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Ambient Temperature (°C)
C
A
Power Derating
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
www.vishay.com
5
SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
Single Pulse
JM
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65163.
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Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
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