SIR850DP [VISHAY]
N-Channel 25-V (D-S) MOSFET; N通道25 -V （D -S ）的MOSFET
| 型号： | SIR850DP |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 25-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiR850DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
TrenchFET® Power MOSFET
100 % Rg Tested
RoHS
30a
30a
0.007 at VGS = 10 V
0.009 at VGS = 4.5 V
COMPLIANT
25
8.4 nC
100 % UIS Tested
APPLICATIONS
PowerPAK SO-8
•
Synchronous Buck
- High-Side
S
6.15 mm
5.15 mm
1
D
S
2
S
3
G
4
D
8
D
G
7
D
6
D
5
Bottom View
S
Ordering Information:
SiR850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
25
20
V
30a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
30a
Continuous Drain Current (TJ = 150 °C)
ID
20.1b, c
16.1b, c
70
A
Pulsed Drain Current
Avalanche Current
Avalanche Energy
IDM
IAS
EAS
35
L = 0.1 mH
mJ
A
61
30a
4b, c
T
T
C = 25 °C
A = 25 °C
Continuous Source-Drain Diode Current
IS
TC = 25 °C
C = 70 °C
TA = 25 °C
TA = 70 °C
41.7
26.7
4.8b, c
3.1b, c
- 55 to 150
260
T
Maximum Power Dissipation
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
21
Maximum
Unit
t ≤ 10 s
Steady State
26
°C/W
2.4
3.0
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68825
S-82287-Rev. B, 22-Sep-08
www.vishay.com
1
SiR850DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
25
V
V
DS Temperature Coefficient
27
mV/°C
VGS(th) Temperature Coefficient
- 5.5
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1
3
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 25 V, VGS = 0 V
DS = 25 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
5
50
0.0058
0.0073
85
0.007
0.009
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 15 A
Forward Transconductancea
VDS = 15 V, ID = 20 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1120
290
100
19
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
VDS = 12.5 V, VGS = 10 V, ID = 20 A
30
13
Qg
Total Gate Charge
8.4
3.3
2.0
1.0
20
nC
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = 12.5 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
2.0
30
30
45
20
25
25
45
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
20
V
DD = 12.5 V, RL = 12.5 Ω
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
30
Fall Time
11
ns
Turn-On Delay Time
14
Rise Time
15
V
DD = 12.5 V, RL = 12.5 Ω
ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
30
Fall Time
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
30
70
1.2
45
30
A
IS = 4.0 A, VGS = 0 V
0.75
23
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
15
IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C
12
ns
tb
11
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68825
S-82287-Rev. B, 22-Sep-08
SiR850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
0.8
0.6
0.4
0.2
0.0
70
V
GS
= 10 thru 4 V
60
50
40
30
20
10
0
T
= 25 °C
C
V
= 3 V
GS
T
C
= 125 °C
T
C
= - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
1200
900
600
300
0
0.0100
0.0085
0.0070
0.0055
0.0040
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
5
10
15
20
25
0
20
40
60
80
100
120
I
- Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.7
1.5
1.3
1.1
0.9
0.7
I = 20 A
D
I
= 20 A
D
V
= 12.5 V
DS
8
V
GS
= 10 V
V
DS
= 6.25 V
6
V
GS
= 4.5 V
V
DS
= 18.75 V
4
2
0
0
5
10
15
20
- 50 - 25
0
25
T - Junction Temperature (°C)
J
50
75
100 125 150
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 68825
S-82287-Rev. B, 22-Sep-08
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SiR850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
100
10
0.025
0.020
0.015
0.010
0.005
0.000
T
= 25 °C
J
T
J
= 150 °C
1
0.1
0.01
T = 125 °C
J
T = - 50 °C
J
T
J
= 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.5
0.2
150
120
90
60
30
0
- 0.1
- 0.4
- 0.7
- 1.0
I
= 1 mA
D
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by R
100 µs
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
100 s, DC
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 68825
S-82287-Rev. B, 22-Sep-08
SiR850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
75
60
45
Package Limited
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
50
40
30
20
10
0
2.20
1.76
1.32
0.88
0.44
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68825
S-82287-Rev. B, 22-Sep-08
www.vishay.com
5
SiR850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68825.
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Document Number: 68825
S-82287-Rev. B, 22-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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