SIS412DN [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V (D -S )的MOSFET型号: | SIS412DN |
厂家: | VISHAY |
描述: | N-Channel 30-V (D-S) MOSFET |
文件: | 总7页 (文件大小:110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
SiS412DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
Halogen-free According to IEC 61249-2-21
TrenchFET® Power MOSFET
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
12
0.024 at VGS = 10 V
0.030 at VGS = 4.5 V
• 100 % Rg Tested
30
3.8 nC
12
APPLICATIONS
PowerPAK 1212-8
• Notebook PC
- System Power
- Load Switch
S
D
3.30 mm
3.30 mm
1
S
2
S
3
G
4
D
8
G
D
7
D
6
D
5
Bottom View
Ordering Information: SiS412DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
30
20
12a
12a
8.7b, c
7b, c
30
Unit
V
T
T
C = 25 °C
C = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
12a
2.7b, c
5
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IAS
EAS
L = 0.1 mH
mJ
W
1.25
15.6
10
3.2b, c
2b, c
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
32
39
°C/W
6.5
8
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 81 °C/W.
e. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
www.vishay.com
1
New Product
SiS412DN
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS /TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
35
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 4.5
VDS = VGS , ID = 250 µA
1.0
20
2.5
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
µA
A
5
On-State Drain Currenta
VGS = 10 V, ID = 7.8 A
0.020
0.024
17
0.024
0.030
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = 4.5 V, ID = 7.0 A
VDS = 10 V, ID = 7.8 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
435
95
42
8
V
DS = 15 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
VDS = 15 V, VGS = 10 V, ID = 7.8 A
VDS = 15 V, VGS = 4.5 V, ID = 7.8 A
f = 1 MHz
12
6
Qg
Total Gate Charge
3.8
1.4
1.1
3.2
15
12
13
10
5
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
1.5
4.5
25
20
20
15
10
15
25
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 15 V, RL = 2.4 Ω
ID ≅ 6.3 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
10
15
10
VDD = 15 V, RL = 2.4 Ω
ID ≅ 6.3 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
4.2
30
A
IS = 6.3 A, VGS = 0 V
0.8
15
7
1.2
25
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
12
IF = 6.3 A, dI/dt = 100 A/µs, TJ = 25 °C
9
ns
tb
6
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
New Product
SiS412DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
8
V
GS
= 10 thru 4 V
25
20
15
10
5
6
V
GS
= 3 V
4
T
C
= 25 °C
2
T
C
= 125 °C
1.5
T
C
= - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.035
0.030
0.025
0.020
0.015
0.010
600
500
400
300
200
100
0
C
iss
V
V
= 4.5 V
= 10 V
GS
GS
C
oss
C
rss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
Capacitance
On-Resistance vs. Drain Current
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 7.8 A
D
I
= 7.8 A
D
V
GS
= 10 V
6
V = 4.5 V
GS
V
= 15 V
V
DS
= 24 V
DS
4
2
0
0
2
4
6
8
- 50 - 25
0
T
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
g
- Junction Temperature (°C)
J
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
www.vishay.com
3
New Product
SiS412DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.08
0.06
0.04
0.02
0
I
= 7.8 A
D
10
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
50
40
30
20
10
0
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
T
J
- Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
100 µs
1 ms
10 ms
100 ms
1s
10 s
0.1
T
= 25 °C
A
DC
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
New Product
SiS412DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
16
12
8
25
20
15
Package Limited
10
5
4
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
www.vishay.com
5
New Product
SiS412DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69006.
www.vishay.com
6
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号:
©2020 ICPDF网 联系我们和版权申明