SIS444DN [VISHAY]
N-Channel 30 V (D-S) MOSFET; N沟道30 V （D -S ）的MOSFET
| 型号： | SIS444DN |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30 V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiS444DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
PRODUCT SUMMARY
Definition
ID (A)f
35g
35g
VDS (V)
RDS(on) () Max.
0.0033 at VGS = 10 V
0.0043 at VGS = 4.5 V
Qg (Typ.)
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
30
33.5 nC
APPLICATIONS
PowerPAK® 1212-8
•
•
•
•
Motor Control
Industrial
Load Switch
ORing
S
3.30 mm
3.30 mm
1
S
2
S
D
3
G
4
D
8
D
7
D
6
G
D
5
Bottom View
N-Channel MOSFET
S
Ordering Information:
SiS444DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
35g
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
35g
ID
Continuous Drain Current (TJ = 150 °C)
24.9a, b
20a, b
70
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
35g
3.3a, b
20
20
52
T
C = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
EAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
43
PD
Maximum Power Dissipation
3.7a, b
3.1a, b
- 55 to 150
260
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
24
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
33
°C/W
1.9
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 63276
S11-1379-Rev. A, 11-Jul-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
30
V
30
mV/°C
VGS(th) Temperature Coefficient
- 5.6
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.2
30
2.3
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 10 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
0.0026
0.0034
65
0.0033
0.0043
Drain-Source On-State Resistancea
S
VGS 4.5 V, ID = 7 A
Forward Transconductancea
VDS = 15 V, ID = 10 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
3065
406
360
68
V
DS = 15 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
VDS = 15 V, VGS = 10 V, ID = 10 A
102
51
Qg
Total Gate Charge
33.5
7.7
13.8
0.7
24
nC
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
0.3
1.4
45
45
60
24
28
26
60
16
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
24
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
32
Fall Time
12
ns
Turn-On Delay Time
14
Rise Time
13
V
DD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
33
Fall Time
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
35
70
1.1
40
20
A
IS = 3 A, VGS 0 V
0.7
21
10
9
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
12
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63276
S11-1379-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
56
42
28
14
10
VGS = 10 V thru 4 V
8
6
TC = 25 °C
VGS = 3 V
4
2
TC = - 55 °C
TC = 125 °C
VGS = 2 V
0
0
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0040
0.0036
0.0032
0.0028
0.0024
0.0020
4500
3600
2700
1800
900
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
0
12
24
36
48
60
0
5
10
15
20
25
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
ID = 10 A
ID = 10 A
1.6
1.4
1.2
1.0
0.8
0.6
8
VGS = 10 V
VDS = 15 V
6
VDS = 10 V
VGS = 4.5 V
VDS = 20 V
4
2
0
- 50
- 25
0
25
50
75
100
125
150
0
14
28
42
56
70
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63276
S11-1379-Rev. A, 11-Jul-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.015
0.012
0.009
0.006
0.003
0.000
100
ID = 10 A
10
TJ = 150 °C
TJ = 25 °C
1
0.1
TJ = 125 °C
0.01
0.001
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
100
80
60
40
20
0
0
ID = 5 mA
- 0.2
- 0.4
- 0.6
- 0.8
ID = 250 μA
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID Limited
100 μs
10
1
1 ms
Limited by RDS(on)
*
10 ms
100 ms
1 s
0.1
0.01
10 s
TC = 25 °C
DC
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 63276
S11-1379-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
80
60
40
20
0
Limited by Package
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
65
52
39
26
13
0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63276
S11-1379-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63276.
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Document Number: 63276
S11-1379-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Document Number: 91000
Revision: 11-Mar-11
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