SL12_11 [VISHAY]
Low VF Surface Mount Schottky Rectifier; 低VF表面贴装肖特基整流器
| 型号： | SL12_11 |
| 厂家： | 
VISHAY |
| 描述： | Low VF Surface Mount Schottky Rectifier |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SL12, SL13
Vishay General Semiconductor
Low VF Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
1.5 A
20 V, 30 V
50 A
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free, RoHS compliant, and
VF
0.34 V
commercial grade
TJ max.
125 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SL12
SL2
20
SL13
SL3
30
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
14
21
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 105 °C (fig. 1)
20
30
IF(AV)
1.5
50
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
10 000
V/μs
°C
- 55 to + 125
- 55 to + 150
TSTG
°C
Document Number: 89408
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SL12, SL13
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SL12
SL13
UNIT
TA = 125 °C
0.230
0.360
0.340
0.445
0.2
IF = 0.1 A
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 25 °C
TA = 100 °C
(1)
Maximum instantaneous forward voltage
VF
V
IF = 1.0 A
Maximum DC reverse current
at rated DC blocking voltage
(1)
IR
mA
6.0
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SL12
SL13
UNIT
°C/W
(1)
RJA
88
28
Maximum thermal resistance
(1)
RJL
Note
(1)
PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SL13-M3/61T
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SL13-M3/5AT
0.064
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.0
50
40
30
20
10
0
Resistive or Inductive Load
8.3 ms Single Half Sine-Wave
at rated TL
1.5
1.0
0.5
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
50 60 70 80 90 100 110 120 130 140 150 160 170
1
10
Number of Cycles at 60 Hz
100
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 89408
Revision: 19-Apr-11
New Product
SL12, SL13
Vishay General Semiconductor
100
10
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 125 °C
TJ = 25 °C
1
100
0.1
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89408
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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