SM5S13ATHE3/I [VISHAY]
TVS DIODE 13V 21.5V DO218AC;型号: | SM5S13ATHE3/I |
厂家: | VISHAY |
描述: | TVS DIODE 13V 21.5V DO218AC 电视 |
文件: | 总5页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM5S10AT thru SM5S43AT
Vishay General Semiconductor
www.vishay.com
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
DO-218 Compatible
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
TYPICAL APPLICATIONS
VBR
11.1 V to 52.8 V
3600 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
P
PPM (10 x 1000 μs)
P
PPM (10 x 10 000 μs)
2800 W
PD
5 W
IFSM
500 A
MECHANICAL DATA
Case: DO-218AC
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
TJ max.
Polarity
175 °C
Uni-directional
Package
DO-218AC
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
with 10/1000 μs waveform
Peak pulse power dissipation
3600
PPPM
PD
W
with 10/10 000 μs waveform
2800
5.0
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
W
A
(1)
IPPM
See next table
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
IFSM
500
A
TJ, TSTG
-55 to +175
°C
Note
(1)
Non-repetitive current pulse at TA = 25 °C
Revision: 03-Dec-2018
Document Number: 87609
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10AT thru SM5S43AT
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
TYPICAL
TEMP.
MAXIMUM
MAX. PEAK
PULSE
CURRENT
AT 10/1000 μs
WAVEFORM
(A)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VOLTAGE
BR (V)
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
REVERSE
LEAKAGE
AT VWM
V
COEFFICIENT
DEVICE
TYPE
(1)
OF VBR
(mA)
(V)
TJ = 175 °C
ID (μA)
T
MIN. NOM. MAX.
ID (μA)
VC (V)
(%/°C)
0.069
0.072
0.074
0.076
0.078
0.080
0.081
0.082
0.083
0.085
0.086
0.087
0.088
0.089
0.090
0.091
SM5S10AT
SM5S11AT
SM5S12AT
SM5S13AT
SM5S14AT
SM5S15AT
SM5S16AT
SM5S17AT
SM5S18AT
SM5S20AT
SM5S22AT
SM5S24AT
SM5S26AT
SM5S28AT
SM5S30AT
SM5S33AT
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
11.7
12.9
14.0
15.2
16.4
17.6
18.8
19.9
21.1
23.4
25.7
28.1
30.4
32.8
35.1
38.7
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
212
198
181
167
155
148
138
130
123
111
101
93
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
86
79
74
68
SM5S36AT
SM5S40AT
SM5S43AT
40.0
44.4
47.8
42.1
46.8
50.3
44.2
49.1
52.8
5.0
5.0
5.0
36.0
40.0
43.0
10
10
10
150
150
150
62
56
52
58.1
64.5
69.4
0.091
0.092
0.093
Notes
•
For all types maximum VF = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
(1)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
1.0
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM5S10ATHE3/I (1)
2.505 750
I
Note
(1)
AEC-Q101 qualified
Revision: 03-Dec-2018
Document Number: 87609
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10AT thru SM5S43AT
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
6.0
10 000
4.0
2.0
0
1000
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
50
150
Case Temperature (°C)
200
0
100
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
3000
100
10
2500
2000
1500
1000
RθJA
RθJC
1
0.1
500
0
0.01
50
75
Case Temperature (°C)
150
175
25
100
125
0.01
0.1
1
10
100
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
Fig. 5 - Typical Transient Thermal Impedance
(10 ms Exponential Waveform)
150
100
50
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
Half Value - IPP
IPPM
2
td
0
10
30
40
0
20
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 03-Dec-2018
Document Number: 87609
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10AT thru SM5S43AT
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AC
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.116 (3.0)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.606 (15.4)
0.583 (14.8)
Lead 1
0.197 (5.0)
0.138 (3.5)
0.185 (4.7)
0.098 (2.5)
0.004 (0.10) (NOM.)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Lead 2/Metal Heatsink
Revision: 03-Dec-2018
Document Number: 87609
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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