SM6A27HE3-2D [VISHAY]
Surface Mount PAR Transient Voltage Suppressors; 表面贴装PAR瞬态电压抑制器
| 型号： | SM6A27HE3-2D |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount PAR Transient Voltage Suppressors |
| 文件： | 总5页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6A27
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
DO-218AB
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VBR
27 V
4600 W
6 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
P
PPM (10 x 1000 μs)
PD
IRSM
90 A
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
IFSM
600 A
175 °C
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
4600
6.0
UNIT
W
Peak pulse power dissipation with 10/1000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
PD
W
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
IRSM
90
A
Maximum working stand-off voltage
VWM
IFSM
22.0
600
V
A
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
Document Number: 88383
Revision: 18-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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190
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6A27
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IZ = 10 mA
IZ = 10 mA
SYMBOL
MIN.
24.0
-
TYP.
MAX.
30.0
36
UNIT
V
Reverse Zener voltage
Zener voltage temperature coefficient
VZ
-
-
VZTC
mV/°C
Clamping voltage for 10 μs/10 ms
exponentially decaying waveform
I
PP = 65 A
VC
-
-
40.0
V
V
IF = 6.0 A
IF = 100 A
-
-
-
-
-
0.99
-
(1)
Instantaneous forward voltage
Reverse leakage current
VF
0.94
TJ = 25 °C
-
-
0.5
20.0
Rated VWM
IR
μA
TJ = 175 °C
Note
(1)
Measured on a 300 μs square pulse width
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
0.95
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM6A27HE3/2D (1)
2.550
2D
750
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
6.0
6000
5000
4000
3000
2000
4.0
2.0
1000
0
0
50
75
Case Temperature (°C)
150
175
25
100
125
50
150
200
0
100
Case Temperature (°C)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88383
Revision: 18-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6A27
Vishay General Semiconductor
150
100
50
100
10
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
TJ = 175 °C
1.0
0.1
Half Value - IPP
IPPM
2
0.01
0.001
TJ = 25 °C
td
0
0.0001
10
30
40
0
20
t - Time (ms)
5
20
35
50
65
80
95
Percentage of VBR (%)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Reverse Characteristics
10 000
100
RθJA
10
1
RθJC
0.1
0.01
1000
0.01
0.1
1
10
100
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
t - Pulse Width (s)
Fig. 4 - Reverse Power Capability
Fig. 7 - Typical Transient Thermal Impedance
100
10
TJ = 150 °C
TJ = 25 °C
1.0
0.1
0.01
0.35
0.45
0.55
0.65
0.75
0.85
0.95
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Document Number: 88383
Revision: 18-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
192
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6A27
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.366 (9.3)
0.343 (8.7)
0.382 (9.7)
Lead 1
0.606 (15.4)
0.583 (14.8)
0.197 (5.0)
0.185 (4.7)
0.138 (3.5)
0.098 (2.5)
0.028 (0.7)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
0.020 (0.5)
0.098 (2.5)
0.059 (1.5)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88383
Revision: 18-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Document Number: 91000
Revision: 11-Mar-11
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