SM6S11AHE3_A/I [VISHAY]
TVS DIODE 11V 18.2V DO218AB;
| 型号： | SM6S11AHE3_A/I |
| 厂家： | 
VISHAY |
| 描述： | TVS DIODE 11V 18.2V DO218AB 局域网 二极管 电视 |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6S10A thru SM6S36A
Vishay General Semiconductor
www.vishay.com
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
10 V to 36 V
TYPICAL APPLICATIONS
VBR
11.1 V to 44.2 V
4600 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
P
PPM (10 x 1000 μs)
P
PPM (10 x 10 000 μs)
3600 W
PD
6 W
IFSM
600 A
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
TJ max.
Polarity
Package
175 °C
Uni-directional
DO-218AB
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
4600
UNIT
with 10/1000 μs waveform
Peak pulse power dissipation
W
with 10/10 000 μs waveform
3600
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
PD
6.0
W
A
(1)
IPPM
See next table
600
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
IFSM
A
TJ, TSTG
-55 to +175
°C
Note
(1)
Non-repetitive current pulse at TA = 25 °C
Revision: 04-Dec-2018
Document Number: 88384
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10A thru SM6S36A
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
TYPICAL
TEMP.
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAX. PEAK
PULSE
CURRENT
AT 10/1000 μs
WAVEFORM
(A)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
V
BR (V)
COEFFICIENT
DEVICE
TYPE
(1)
OF VBR
(mA)
(V)
TJ = 175 °C
T
MIN. NOM. MAX.
ID (μA)
VC (V)
I
D (μA)
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
(%/°C)
SM6S10A 11.1 11.7 12.3
SM6S11A 12.2 12.9 13.5
SM6S12A 13.3 14.0 14.7
SM6S13A 14.4 15.2 15.9
SM6S14A 15.6 16.4 17.2
SM6S15A 16.7 17.6 18.5
SM6S16A 17.8 18.8 19.7
SM6S17A 18.9 19.9 20.9
SM6S18A 20.0 21.1 22.1
SM6S20A 22.2 23.4 24.5
SM6S22A 24.4 25.7 26.9
SM6S24A 26.7 28.1 29.5
SM6S26A 28.9 30.4 31.9
SM6S28A 31.1 32.8 34.4
SM6S30A 33.3 35.1 36.8
SM6S33A 36.7 38.7 40.6
SM6S36A 40.0 42.1 44.2
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
271
253
231
214
198
189
177
167
158
142
130
118
109
101
95
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
0.069
0.072
0.074
0.076
0.078
0.080
0.081
0.082
0.083
0.085
0.086
0.087
0.088
0.089
0.090
0.091
0.091
86
79
Notes
•
For all types maximum VF = 1.9 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
(1)
To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
0.95
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM6S10AHE3_A/I (1)
2.550 750
I
Note
(1)
AEC-Q101 qualified
Revision: 04-Dec-2018
Document Number: 88384
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10A thru SM6S36A
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
6.0
10 000
4.0
2.0
1000
0
50
150
200
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
0
100
Case Temperature (°C)
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
6000
100
10
5000
4000
3000
2000
RθJA
RθJC
1
0.1
1000
0
0.01
50
75
Case Temperature (°C)
150
175
0.01
0.1
1
10
100
25
100
125
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
Fig. 5 - Typical Transient Thermal Impedance
(10 ms Exponential Waveform)
150
100
50
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
Half Value - IPP
IPPM
2
td
0
0
1.0
2.0
t - Time (ms)
3.0
4.0
Fig. 3 - Pulse Waveform
Revision: 04-Dec-2018
Document Number: 88384
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10A thru SM6S36A
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.366 (9.3)
0.343 (8.7)
0.382 (9.7)
Lead 1
0.606 (15.4)
0.583 (14.8)
0.197 (5.0)
0.185 (4.7)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
Revision: 04-Dec-2018
Document Number: 88384
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
Document Number: 91000
1
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