SM6S20A2E [VISHAY]
Trans Voltage Suppressor Diode, 3600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB;![SM6S20A2E](http://pdffile.icpdf.com/pdf2/p00285/img/icpdf/SM6S12_1708112_icpdf.jpg)
型号: | SM6S20A2E |
厂家: | ![]() |
描述: | Trans Voltage Suppressor Diode, 3600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB |
文件: | 总3页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM6S Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive Transient Voltage Suppressors
Stand-off Voltage 10 to 36V
Peak Pulse Power 4600W (10/1000µs)
3600W (10/10,000µs)
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
Mounting Pad Layout
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
0.413(10.5)
0.374(9.5)
0.366(9.3)
0.343(8.7)
Dimensions in
inches and (millimeters)
0.406(10.3)
0.382(9.7)
0.150(3.8)
0.366(9.3)
0.126(3.2)
0.343(8.7)
LEAD 1
0.138(3.5)
0.098(2.5)
0.606(15.4)
0.583(14.8)
0.197(5.0)
0.185(4.7)
*
Patent #’s:
0.028(0.7)
0.020(0.5)
4,980,315
5,166,769
5,278,095
0.016 (0.4) Min.
0.098(2.5)
0.059(1.5)
LEAD 2/METAL HEATSINK
Features
Mechanical Data
• Ideally suited for load dump protection
Case: Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Terminals: Plated, solderable per MIL-STD-750, Method 2026
Polarity: Heatsink is anode
• High temperature stability due to unique oxide passiva-
tion and patented PAR® construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at TJ = 175°C
Mounting Position: Any
Weight: 0.091 oz., 2.58 g
Packaging codes/options:
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
• Low forward voltage drop
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
4600
3600
PPPM
W
Steady state power dissipation
PD
IPPM
6.0
See Table 1
600
W
A
Peak pulse current with a 10/1000µs waveform (NOTE 1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
IFSM
A
RΘJC
TJ, TSTG
0.95
°C/W
°C
Operating junction and storage temperature range
–55 to +175
Notes: (1) Non-repetitive current pulse derated above TA=25°C
Document Number 88384
01-Aug-02
www.vishay.com
1
SM6S Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(T = 25°C unless otherwise noted)
C
Maximum Maximum Max. Peak Maximum
Reverse
Leakage
at VWM
ID
Reverse
Leakage
at VWM
Pulse
Current
Clamping
Voltage at
IPPM
Device Type
Breakdown Voltage
Test Current Stand-off
V(BR)
(V)
IT
Voltage
VWM
at 10/1000µs
Tc=175oC Waveform
VC
Min.
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
Max.
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
(V)
(µA)
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
ID(µA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
(A)
245
271
229
253
209
231
193
214
178
198
171
189
160
177
151
167
143
158
128
142
117
130
107
118
99
(V)
SM6S10
SM6S10A
SM6S11
SM6S11A
SM6S12
SM6S12A
SM6S13
SM6S13A
SM6S14
SM6S14A
SM6S15
SM6S15A
SM6S16
SM6S16A
SM6S17
SM6S17A
SM6S18
SM6S18A
SM6S20
SM6S20A
SM6S22
SM6S22A
SM6S24
SM6S24A
SM6S26
SM6S26A
SM6S28
SM6S28A
SM6S30
SM6S30A
SM6S33
SM6S33A
SM6S36
SM6S36A
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
109
92
101
86
95
78
86
72
79
Note: For all types maximum VF = 1.9V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
www.vishay.com
2
Document Number 88384
01-Aug-02
SM6S Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Load Dump Power Characteristics
(10ms Exponential Waveform)
Power Derating Curve
8.0
6,000
5,000
4,000
3,000
2,000
6.0
4.0
2.0
0
1,000
0
50
150
200
50
75
150
175
0
100
25
100
125
Case Temperature (°C)
Case Temperature (°C)
Pulse Waveform
Reverse Power Capability
10,000
150
TA = 25°C
Pulse width (td) is defined as
the point where the peak
tr = 10µs
current decays to 50% of IPP
Peak Value IPP
100
50
0
IPP
2
Half Value –
td
1,000
10
30
40
0
20
10
100
Pulse Width (ms) – 1/2 IPP Exponential Waveform
Time, ms (t)
Typical Transient Thermal Impedance
100
10
RΘJA
RΘJC
1
0.1
0.01
0.1
1
10
0.01
100
t – Pulse Width (sec.)
Document Number 88384
01-Aug-02
www.vishay.com
3
相关型号:
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SM6S20AHE3_A/I
Trans Voltage Suppressor Diode, 4600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB,
VISHAY
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