SM6T10AHE3_A/H [VISHAY]
Trans Voltage Suppressor Diode,;型号: | SM6T10AHE3_A/H |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 二极管 |
文件: | 总5页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM6T Series
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
Available
• 600 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VWM
5.80 V to 188 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
V
BR uni-directional
6.8 V to 220 V
6.8 V to 220 V
600 W
V
BR bi-directional
PPPM
PD
5.0 W
MECHANICAL DATA
I
FSM (uni-directional only)
100 A
Case: SMB (DO-214AA)
TJ max.
150 °C
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Polarity
Uni-directional, bi-directional
SMB (DO-214AA)
Package
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
DEVICES FOR BI-DIRECTION APPLICATIONS
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
For bi-directional devices use CA suffix (e.g. SM6T12CA).
Electrical characteristics apply in both directions.
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
600
UNIT
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
IPPM
See next table
5.0
A
PD
W
IFSM
100
A
TJ, TSTG
-65 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 24-Jan-2019
Document Number: 88385
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6T Series
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
CLAMPING
VOLTAGE
CLAMPING
VOLTAGE
C AT IPPM
8/20 μs
DEVICE
MARKING
CODE
TEST
CURRENT
IT
STAND-OFF LEAKAGE
VOLTAGE
T
VOLTAGE
VRM
CURRENT
(2)
TYPE (1)
MAX.
V
BR AT IT
(V)
V
C AT IPPM
V
I
RM AT VRM
(μA)
10-4/°C
10/1000 μs
(mA)
(V)
UNI
BI
MIN. MAX.
(V)
(A)
(V)
(A)
298
276
215
184
147
123
102
93
SM6T6V8A
SM6T7V5A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
SM6T22A
SM6T24A
SM6T27A
SM6T30A
SM6T33A
SM6T36A
SM6T39A
SM6T68A
SM6T100A
SM6T150A
SM6T200A
SM6T220A
KE7
KK7
KT7
KX7
LG7
LM7
LT7
KE7
AK7
AT7
AX7
LG7
BM7
BT7
LV7
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
10
10
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
1000
500
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
57.0
53.0
41.0
36.0
28.0
24.0
20.0
18.0
16.0
14.5
13.1
12.0
11.1
6.50
4.40
2.90
2.20
2.00
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59
5.7
6.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.3
7.8
8.4
8.8
9.2
LV7
9.4
LX7
BX7
CE7
MG7
CK7
CM7
NG7
NV7
PK7
PR7
PR8
83
9.6
ME7
MG7
MK7
MM7
NG7
NV7
PK7
PR7
PR8
75
9.7
68
9.8
64.3
69.7
121
178
265
353
388
62
9.9
57
10.0
10.4
10.6
10.8
10.8
10.8
33
22.5
15
158
207
190
210
171
274
11.3
10.3
209
231
188
328
Notes
(1)
(2)
(3)
For bi-directional devices add suffix “CA”
VBR measured after IT applied for 300 μs square wave pulse
For bi-polar devices with VRM = 10 V or under, the IRM limit is doubled
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient air (1)
SYMBOL
VALUE
100
UNIT
°C/ W
RJA
Typical thermal resistance, junction to lead
RJL
20
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SM6T10A-E3/52
0.096
0.096
0.096
0.096
52
5B
H
750
7" diameter plastic tape and reel
SM6T10A-M3/52
SM6T10A-E3/5B
3200
750
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SM6T10A-M3/5B
SM6T10AHE3_A/H (1)
SM6T10AHM3_A/H (1)
SM6T10AHE3_A/I (1)
SM6T10AHM3_A/I (1)
I
3200
Note
(1)
AEC-Q101 qualified
Revision: 24-Jan-2019
Document Number: 88385
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6T Series
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
6000
1000
100
10
1
Measured at
Zero Bias
VR, Measured at
Stand-Off
Voltage VWM
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Uni-Directional
Bi-Directional
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
100
200
VWM - Reverse Stand-Off Voltage (V)
td - Pulse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
100
75
10
1.0
0.1
50
25
0
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
100 125
150 175
200
t - Pulse Duration (s)
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
150
200
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
8.3 ms Single Half Sine-Wave
Uni-Directional Only
tr = 10 µs
Peak Value
IPPM
100
50
0
Half Value - IPP
IPPM
2
10/1000 µs Waveform
as defined by R.E.A.
td
10
1.0
3.0
4.0
0
2.0
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 24-Jan-2019
Document Number: 88385
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6T Series
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
0.180 (4.57)
0.160 (4.06)
MIN.
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
0.220 REF.
0.220 (5.59)
0.205 (5.21)
Revision: 24-Jan-2019
Document Number: 88385
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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