SM6T10A [VISHAY]
TRANSZORB⑩ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR; TRANSZORB⑩表面贴装瞬态电压抑制器型号: | SM6T10A |
厂家: | VISHAY |
描述: | TRANSZORB⑩ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
文件: | 总3页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
SM6T SERIES
TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts
FEATURES
♦ For surface mounted applications in order
DO-214AA
to optimize board space
♦ Low profile package
♦ Built-in strain relief
♦ Glass passivated junction
♦ Low inductance
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
♦ Excellent clamping capability
♦ Repetition Rate (duty cycle): 0.01%
♦ Fast reponse time: typically less than 1ps from 0 volts to
0.180 (4.57)
0.160 (4.06)
V
min.
BR
♦ Typical I less than 1µA above 10V
D
0.012 (0.305)
0.006 (0.152)
♦ High temperature soldering: 250°C/10 seconds
at terminals
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
0.096 (2.44)
0.084 (2.13)
MECHANICAL DATA
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated solderable per MIL-STD-750,
Method 2026
0.008 (0.203)
MAX.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Polarity: For uni-directional types: Color band
denotes positive end (cathode)
Dimensions in inches and (millimeters)
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOLS
VALUE
UNIT
Peak Pulse Power Dissipation on 10/1000µs
waveform (NOTES 1, 2, Fig. 1)
PPPM
Minimum 600
Watts
Peak Pulse Current on 10/1000µs
waveform (NOTE 1, Fig. 3)
IPPM
PM(AV)
IFSM
See Table 1
5.0
Amps
Watts
Amps
Power Dissipation on Infinite Heatsink, TA=50°C
Peak Forward Surge Current, 10ms Single Half Sine-wave,
Undirectional Only
100
Max. Junction Temperature
TJ
150
-65 to +175
100
°C
°C
Storage Temperature Range
TSTG
RΘJA
RΘJL
Thermal Resistance Junction to Ambient Air (NOTE 2)
Thermal Resistance Junction to Leads
°C/W
°C/W
20
NOTES
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
(2) Mounted on 5.0mm2 (.013mm thick) land areas.
(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.
1/21/99
ELECTRICAL CHARACTERISTICS RATINGS at (T =25ºC unless otherwise noted)
A
Device Marking Code Standoff Leakage
Breakdown Voltage
Test
Current
Clamping Voltage Clamping Voltage
@ I @ I
αT
Max
10-4/°C
(2)
Current(3)
V
@ I
Voltage
V
V
C
Type(1)
C
PP
PP
BR
T
V
RM
I
T
10/1000µs
8/20µs
I
@ V
(Volts)
RM
RM
(µA)
Uni
Bi
(Volts)
(mA)
(Volts) (Amps) (Volts) (Amps)
Min
Max
SM6T6V8A
SM6T7V5A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
SM6T22A
SM6T24A
SM6T27A
SM6T30A
SM6T33A
SM6T36A
SM6T39A
SM6T68A
SM6T100A
SM6T150A
SM6T200A
SM6T220A
KE7
KE7
5.80
1000
500
6.45
7.14
10
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
57.0
53.0
41.0
36.0
28.0
24
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
298
276
215
184
147
123
102
93
5.7
6.1
KK7
KT7
KX7
LG7
LM7
LT7
AK7
AT7
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
10
10.0
5.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.3
AX7
LG7
BM7
BT7
LV7
7.8
8.4
8.8
20.0
18.0
16.0
14.5
13.1
12.0
11.1
6.50
4.40
2.90
2.20
2.00
9.2
LV7
9.4
LX7
ME7
MG7
MK7
MM7
NG7
NV7
PK7
PR7
PR8
BX7
CE7
MG7
CK7
CM7
NG7
NV7
PK7
PR7
PR8
83
9.6
75
9.7
68
9.8
62
9.9
57
10.0
10.4
10.6
10.8
10.8
10.8
33
178
22.5
15
158
207
265
171
190
210
274
353
11.3
10.3
188
209
231
328
388
NOTES:
(1) For bi-directional devices add “C” for ±10% and “CA” for ±5% tolerance of VBR
(2) VBR measured after IT applied for 300µs square wave pulse
(3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled
APPLICATION NOTES
A 600W (SMB) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to pro-
tect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current
within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit.
RECOMMENDED PAD SIZES
The pad dimensions should be 0.010” (0.25mm) longer than the contact size, in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for
soldering methods.
0.90 (2.28)
0.025 (2.16)
0.070 (1.78)
RATINGS AND CHARACTERISTICS CURVES SM6T SERIES
FIG. 1 - PEAK PULSE POWER RATING CURVE
FIG. 2 - PULSE DERATING CURVE
100
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG. 3
100
75
T =25°C
A
50
25
1.0
0.2 x 0.2” (0.5 x 0.5mm)
COPPER PAD AREAS
0.1
0
µ
µ
µ
10 s
µ
100 s
1.0ms
10ms
0.1 s
1.0 s
0
25
50
75 100 125 150 175 200
td, PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE, °C
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
FIG. 3 - PULSE WAVEFORM
150
100
50
6,000
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
T =25° C
J
tr=10µsec.
f=1.0 MH
Z
CURRENT DECAYS to 50% of I
PPM
Vsig=50mVp-p
PEAK VALUE
MEASURED at
ZERO BIAS
I
PPM
HALF VALUE - I
PP
1,000
100
10
2
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
MEASURED at
STAND-OFF
VOLTAGE, V
WM
td
0
0
1.0
2.0
3.0
4.0
t, TIME, ms
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
BIDIRECTIONAL
6,000
1,000
T =25° C
J
1
10
100 200
f=1.0 MH
Z
Vsig=50mVp-p
VWM, REVERSE STAND-OFF VOLTAGE, VOLTS
MEASURED at
ZERO BIAS
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
200
100
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
UNIDIRECTIONAL ONLY
MEASURED at
STAND-OFF
VOLTAGE, V
WM
100
10
10
1
10
100
1
10
100 200
NUMBER OF CYCLES AT 60 HZ
VWM, REVERSE STAND-OFF VOLTAGE,
VOLTS
相关型号:
SM6T10A-E3
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient Suppressor
VISHAY
SM6T10A-E3/2
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient Suppressor
VISHAY
SM6T10A-E3/5
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient Suppressor
VISHAY
SM6T10A-E3/51
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient Suppressor
VISHAY
©2020 ICPDF网 联系我们和版权申明