SM6T10A [VISHAY]

TRANSZORB⑩ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR; TRANSZORB⑩表面贴装瞬态电压抑制器
SM6T10A
型号: SM6T10A
厂家: VISHAY    VISHAY
描述:

TRANSZORB⑩ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
TRANSZORB⑩表面贴装瞬态电压抑制器

瞬态抑制器 二极管 光电二极管 局域网
文件: 总3页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NEW PRODUCT  
NEW PRODUCT  
NEW PRODUCT  
SM6T SERIES  
TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR  
Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts  
FEATURES  
For surface mounted applications in order  
DO-214AA  
to optimize board space  
Low profile package  
Built-in strain relief  
Glass passivated junction  
Low inductance  
0.086 (2.20)  
0.077 (1.95)  
0.155 (3.94)  
0.130 (3.30)  
Excellent clamping capability  
Repetition Rate (duty cycle): 0.01%  
Fast reponse time: typically less than 1ps from 0 volts to  
0.180 (4.57)  
0.160 (4.06)  
V
min.  
BR  
Typical I less than 1µA above 10V  
D
0.012 (0.305)  
0.006 (0.152)  
High temperature soldering: 250°C/10 seconds  
at terminals  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
0.096 (2.44)  
0.084 (2.13)  
MECHANICAL DATA  
Case: JEDEC DO-214AA (SMB) molded plastic over  
passivated junction  
Terminals: Solder plated solderable per MIL-STD-750,  
Method 2026  
0.008 (0.203)  
MAX.  
0.060 (1.52)  
0.030 (0.76)  
0.220 (5.59)  
0.205 (5.21)  
Polarity: For uni-directional types: Color band  
denotes positive end (cathode)  
Dimensions in inches and (millimeters)  
Standard Packaging: 12mm tape (EIA STD RS-481)  
Weight: 0.003 ounces, 0.093 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified  
SYMBOLS  
VALUE  
UNIT  
Peak Pulse Power Dissipation on 10/1000µs  
waveform (NOTES 1, 2, Fig. 1)  
PPPM  
Minimum 600  
Watts  
Peak Pulse Current on 10/1000µs  
waveform (NOTE 1, Fig. 3)  
IPPM  
PM(AV)  
IFSM  
See Table 1  
5.0  
Amps  
Watts  
Amps  
Power Dissipation on Infinite Heatsink, TA=50°C  
Peak Forward Surge Current, 10ms Single Half Sine-wave,  
Undirectional Only  
100  
Max. Junction Temperature  
TJ  
150  
-65 to +175  
100  
°C  
°C  
Storage Temperature Range  
TSTG  
RΘJA  
RΘJL  
Thermal Resistance Junction to Ambient Air (NOTE 2)  
Thermal Resistance Junction to Leads  
°C/W  
°C/W  
20  
NOTES  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2  
(2) Mounted on 5.0mm2 (.013mm thick) land areas.  
(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.  
1/21/99  
ELECTRICAL CHARACTERISTICS RATINGS at (T =25ºC unless otherwise noted)  
A
Device Marking Code Standoff Leakage  
Breakdown Voltage  
Test  
Current  
Clamping Voltage Clamping Voltage  
@ I @ I  
αT  
Max  
10-4/°C  
(2)  
Current(3)  
V
@ I  
Voltage  
V
V
C
Type(1)  
C
PP  
PP  
BR  
T
V
RM  
I
T
10/1000µs  
8/20µs  
I
@ V  
(Volts)  
RM  
RM  
(µA)  
Uni  
Bi  
(Volts)  
(mA)  
(Volts) (Amps) (Volts) (Amps)  
Min  
Max  
SM6T6V8A  
SM6T7V5A  
SM6T10A  
SM6T12A  
SM6T15A  
SM6T18A  
SM6T22A  
SM6T24A  
SM6T27A  
SM6T30A  
SM6T33A  
SM6T36A  
SM6T39A  
SM6T68A  
SM6T100A  
SM6T150A  
SM6T200A  
SM6T220A  
KE7  
KE7  
5.80  
1000  
500  
6.45  
7.14  
10  
10.5  
11.3  
14.5  
16.7  
21.2  
25.2  
30.6  
33.2  
37.5  
41.5  
45.7  
49.9  
53.9  
92.0  
137  
57.0  
53.0  
41.0  
36.0  
28.0  
24  
13.4  
14.5  
18.6  
21.7  
27.2  
32.5  
39.3  
42.8  
48.3  
53.5  
59.0  
64.3  
69.7  
121  
298  
276  
215  
184  
147  
123  
102  
93  
5.7  
6.1  
KK7  
KT7  
KX7  
LG7  
LM7  
LT7  
AK7  
AT7  
6.40  
8.55  
10.2  
12.8  
15.3  
18.8  
20.5  
23.1  
25.6  
28.2  
30.8  
33.3  
58.1  
85.5  
128  
7.13  
9.50  
11.4  
14.3  
17.1  
20.9  
22.8  
25.7  
28.5  
31.4  
34.2  
37.1  
64.6  
95.0  
143  
7.88  
10.5  
12.6  
15.8  
18.9  
23.1  
25.2  
28.4  
31.5  
34.7  
37.8  
41.0  
71.4  
105  
10  
10.0  
5.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.00  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
7.3  
AX7  
LG7  
BM7  
BT7  
LV7  
7.8  
8.4  
8.8  
20.0  
18.0  
16.0  
14.5  
13.1  
12.0  
11.1  
6.50  
4.40  
2.90  
2.20  
2.00  
9.2  
LV7  
9.4  
LX7  
ME7  
MG7  
MK7  
MM7  
NG7  
NV7  
PK7  
PR7  
PR8  
BX7  
CE7  
MG7  
CK7  
CM7  
NG7  
NV7  
PK7  
PR7  
PR8  
83  
9.6  
75  
9.7  
68  
9.8  
62  
9.9  
57  
10.0  
10.4  
10.6  
10.8  
10.8  
10.8  
33  
178  
22.5  
15  
158  
207  
265  
171  
190  
210  
274  
353  
11.3  
10.3  
188  
209  
231  
328  
388  
NOTES:  
(1) For bi-directional devices add “C” for ±10% and “CA” for ±5% tolerance of VBR  
(2) VBR measured after IT applied for 300µs square wave pulse  
(3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled  
APPLICATION NOTES  
A 600W (SMB) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to pro-  
tect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current  
within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit.  
RECOMMENDED PAD SIZES  
The pad dimensions should be 0.010” (0.25mm) longer than the contact size, in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for  
soldering methods.  
0.90 (2.28)  
0.025 (2.16)  
0.070 (1.78)  
RATINGS AND CHARACTERISTICS CURVES SM6T SERIES  
FIG. 1 - PEAK PULSE POWER RATING CURVE  
FIG. 2 - PULSE DERATING CURVE  
100  
10  
NON-REPETITIVE  
PULSE WAVEFORM  
SHOWN IN FIG. 3  
100  
75  
T =25°C  
A
50  
25  
1.0  
0.2 x 0.2” (0.5 x 0.5mm)  
COPPER PAD AREAS  
0.1  
0
µ
µ
µ
10 s  
µ
100 s  
1.0ms  
10ms  
0.1 s  
1.0 s  
0
25  
50  
75 100 125 150 175 200  
td, PULSE WIDTH, sec.  
TA, AMBIENT TEMPERATURE, °C  
FIG. 4 - TYPICAL JUNCTION CAPACITANCE  
UNIDIRECTIONAL  
FIG. 3 - PULSE WAVEFORM  
150  
100  
50  
6,000  
PULSE WIDTH (td) is DEFINED  
as the POINT WHERE the PEAK  
T =25° C  
J
tr=10µsec.  
f=1.0 MH  
Z
CURRENT DECAYS to 50% of I  
PPM  
Vsig=50mVp-p  
PEAK VALUE  
MEASURED at  
ZERO BIAS  
I
PPM  
HALF VALUE - I  
PP  
1,000  
100  
10  
2
10/1000µsec. WAVEFORM  
as DEFINED by R.E.A.  
MEASURED at  
STAND-OFF  
VOLTAGE, V  
WM  
td  
0
0
1.0  
2.0  
3.0  
4.0  
t, TIME, ms  
FIG. 5 - TYPICAL JUNCTION CAPACITANCE  
BIDIRECTIONAL  
6,000  
1,000  
T =25° C  
J
1
10  
100 200  
f=1.0 MH  
Z
Vsig=50mVp-p  
VWM, REVERSE STAND-OFF VOLTAGE, VOLTS  
MEASURED at  
ZERO BIAS  
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
200  
100  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
UNIDIRECTIONAL ONLY  
MEASURED at  
STAND-OFF  
VOLTAGE, V  
WM  
100  
10  
10  
1
10  
100  
1
10  
100 200  
NUMBER OF CYCLES AT 60 HZ  
VWM, REVERSE STAND-OFF VOLTAGE,  
VOLTS  

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