SM6T12CA-E3 [VISHAY]
DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient Suppressor;
| 型号： | SM6T12CA-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient Suppressor 电视 |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6T Series
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• 600 W peak pulse power capability with a
10/1000 µs waveform
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
DO-214AA (SMB)
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
VBR
6.8 V to 220 V
TYPICAL APPLICATIONS
PPPM
600 W
5.0 W
100 A
150 °C
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
PD
I
FSM (uni-directional only)
TJ max.
MECHANICAL DATA
Case: DO-214AA (SMB)
DEVICES FOR BI-DIRECTION APPLICATIONS
Epoxy meets UL 94V-0 flammability rating
For bi-directional devices use CA suffix (e.g.
SM6T12CA).
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
PPPM
IPPM
VALUE
600
UNIT
W
Peak pulse power dissipation on 10/1000 µs waveform (1)(2) (Fig. 1)
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 3)
Power dissipation on infinite heatsink TA = 50 °C
See next table
5.0
A
PD
W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to +150
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
Document Number: 88385
Revision: 04-Sep-07
www.vishay.com
81
SM6T Series
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
BREAKDOWN
VOLTAGE
CLAMPING
VOLTAGE
CLAMPING
VOLTAGE
DEVICE
MARKING
CODE
LEAKAGE
STAND-OFF
VOLTAGE
αT
Max
TEST
CURRENT
(mA)
(3)
(2)
CURRENT
(1)
V
AT I
V AT I
V
AT I
(V)
C
PP
C PP
TYPE
BR
T
V
I
AT V
RM
RM
RM
0-4/°C
10/1000 µs
8/20 µs
(V)
(V)
(µA)
UNI
KE7
KK7
KT7
KX7
LG7
LM7
LT7
BI
MIN
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
MAX
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
(V)
(A)
(A)
298
276
215
184
147
123
102
93
SM6T6V8A
SM6T7V5A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
SM6T22A
SM6T24A
SM6T27A
SM6T30A
SM6T33A
SM6T36A
SM6T39A
SM6T68A
SM6T100A
SM6T150A
SM6T200A
SM6T220A
KE7
AK7
AT7
10
10
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
1000
500
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
57.0
53.0
41.0
36.0
28.0
24.0
20.0
18.0
16.0
14.5
13.1
12.0
11.1
6.50
4.40
2.90
2.20
2.00
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
5.7
6.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.3
AX7
LG7
BM7
BT7
LV7
7.8
8.4
8.8
9.2
LV7
9.4
LX7
ME7
MG7
MK7
MM7
NG7
NV7
PK7
PR7
PR8
BX7
CE7
MG7
CK7
CM7
NG7
NV7
PK7
PR7
PR8
83
9.6
75
9.7
68
9.8
62
9.9
57
10.0
10.4
10.6
10.8
10.8
10.8
33
178
22.5
15
158
207
265
190
210
171
274
353
11.3
10.3
209
231
188
328
388
Notes:
(1) For bi-directional devices add suffix “CA”
(2) VBR measured after IT applied for 300 µs square wave pulse
(3) For bipolar devices with VR = 10 V or under, the IT limit is doubled
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance, junction to ambient air (1)
RθJA
100
20
°C/W
°C/W
Thermal resistance, junction to leads
RθJL
Note:
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SM6T10A-E3/52
0.096
52
5B
52
5B
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SM6T10A-E3/5B
SM6T10AHE3/52 (1)
SM6T10AHE3/5B (1)
0.096
0.096
0.096
3200
Note:
(1) Automotive grade AEC Q101 qualified
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82
Document Number: 88385
Revision: 04-Sep-07
SM6T Series
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
100
10
1
6000
1000
Measured at
Zero Bias
VR, Measured at
Stand-Off
Voltage VWM
100
10
TJ = 25 °C
f = 1.0 MHz
sig = 50 mVp-p
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Uni-Directional
Bi-Directional
V
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
100
200
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance
100
100
75
10
1.0
0.1
50
25
0
0
25
50
75
100 125
150 175
200
0.001
0.01
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
t - Pulse Duration (s)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Typical Transient Thermal Impedance
200
100
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
8.3 ms Single Half Sine-Wave
Uni-Directional Only
tr = 10 µs
Peak Value
IPPM
100
50
0
Half Value - IPP
IPPM
2
10/1000 µs Waveform
as defined by R.E.A.
td
10
1.0
3.0
4.0
0
2.0
100
1
10
t - Time (ms)
Number of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
Document Number: 88385
Revision: 04-Sep-07
www.vishay.com
83
SM6T Series
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
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84
Document Number: 88385
Revision: 04-Sep-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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