SM6T24A-E3/55 [VISHAY]

Trans Voltage Suppressor Diode, 600W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN;


型号：	SM6T24A-E3/55
厂家：	VISHAY
描述：	Trans Voltage Suppressor Diode, 600W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN 局域网光电二极管
文件：	总5页 (文件大小：97K)
中文：	中文翻译
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SM6T Series

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• 600 W peak pulse power capability with a

10/1000 µs waveform

• Available in Unidirectional and Bidirectional

• Excellent clamping capability

• Low inductance

DO-214AA (SMB)

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

MAJOR RATINGS AND CHARACTERISTICS

TYPICAL APPLICATIONS

V_(BR)

6.8 V to 220 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

P_PPM

600 W

P_D

5.0 W

I_FSM(Unidirectional only)

T_jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-214AA (SMB)

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional devices use CA suffix (e.g.

SM6T12CA).

Electrical characteristics apply in both directions.

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: For unidirectional types the band denotes

cathode end, no marking on bidirectional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

Minimum 600

see next table

5.0

UNIT

Peak pulse power dissipation on 10/1000 µs waveform ^(1,2)(Fig. 1)

Peak power pulse current with a 10/1000 µs waveform ⁽¹⁾(Fig. 3)

Power dissipation on infinite heatsink T_A= 50 °C

P_D

Peak forward surge current 10 ms single half sine-wave uni-directional only ⁽²⁾

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

- 65 to +150

°C

Note:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number 88385

08-Sep-06

www.vishay.com

SM6T Series

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

BREAKDOWN

VOLTAGE

CLAMPING

VOLTAGE

CLAMPING

VOLTAGE

DEVICE

MARKING

CODE

LEAKAGE

STAND-OFF

VOLTAGE

α_T

Max

TEST

CURRENT

(mA)

(3)

(2)

CURRENT

(1)

AT I

V AT I

AT I

(V)

C PP

TYPE

(BR)

AT V

10/1000 µs

8/20 µs

(V)

0^-4/°C

(V)

(µA)

UNI

KE7

KK7

KT7

KX7

LG7

LM7

LT7

MIN

6.45

7.13

9.50

11.4

14.3

17.1

20.9

22.8

25.7

28.5

31.4

34.2

37.1

64.6

95.0

143

MAX

7.14

7.88

10.5

12.6

15.8

18.9

23.1

25.2

28.4

31.5

34.7

37.8

41.0

71.4

105

(V)

(A)

298

276

215

184

147

123

102

SM6T6V8A

SM6T7V5A

SM6T10A

SM6T12A

SM6T15A

SM6T18A

SM6T22A

SM6T24A

SM6T27A

SM6T30A

SM6T33A

SM6T36A

SM6T39A

SM6T68A

SM6T100A

SM6T150A

SM6T200A

SM6T220A

KE7

AK7

AT7

5.80

6.40

8.55

10.2

12.8

15.3

18.8

20.5

23.1

25.6

28.2

30.8

33.3

58.1

85.5

128

1000

500

10.0

5.0

1.0

10.5

11.3

14.5

16.7

21.2

25.2

30.6

33.2

37.5

41.5

45.7

49.9

53.9

92.0

137

57.0

53.0

41.0

36.0

28.0

24.0

20.0

18.0

16.0

14.5

13.1

12.0

11.1

6.50

4.40

2.90

2.20

2.00

13.4

14.5

18.6

21.7

27.2

32.5

39.3

42.8

48.3

53.5

59.0

64.3

69.7

121

5.7

6.1

1.0

7.3

AX7

LG7

BM7

BT7

LV7

7.8

8.4

8.8

9.2

LV7

9.4

LX7

ME7

MG7

MK7

MM7

NG7

NV7

PK7

PR7

PR8

BX7

CE7

MG7

CK7

CM7

NG7

NV7

PK7

PR7

PR8

9.6

9.7

9.8

9.9

10.0

10.4

10.6

10.8

178

22.5

158

207

265

190

210

171

274

353

11.3

10.3

209

231

188

328

388

Note:

(1) For bi-directional devices add suffix “CA”

(2) V_BRmeasured after I_Tapplied for 300 µs square wave pulse

(3) For bipolar devices with V_R= 10 Volts or under, the I_Tlimit is doubled

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Thermal resistance junction to ambient air ⁽¹⁾

R_θJA

100

°C/W

Thermal resistance junction to leads

R_θJL

Note:

(1) Mounted on minimum recommended pad layout

ORDERING INFORMATION

PREFERRED P/N

SM6T10A-E3/52

SM6T10A-E3/5B

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

0.096

750

7" Diameter Plastic Tape & Reel

13" Diameter Plastic Tape & Reel

0.096

3200

www.vishay.com

Document Number 88385

08-Sep-06

SM6T Series

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

100

6000

1000

Measured at

Zero Bias

VR, Measured at

Stand-off

Voltage V^WM

100

= 25 °C

f = 1.0 MHz

sig = 50 mVp-p

0.2 x 0.2" (0.5 x 0.5 mm)

Copper Pad Areas

Uni-Directional

Bi-Directional

0.1

0.1 µs

1.0 µs

10 µs

100 µs

1.0 ms

10 ms

100

200

td - Pulse Width (s)

VWM - Reverse Stand-off Voltage (V)

Figure 1. Peak Pulse Power Rating Curve

Figure 4. Typical Junction Capacitance

100

1.0

0.1

0.001

0.01

0.1

100

1000

100 125

150 175

200

TJ - Initial Temperature (°C)

t - Pulse Duration (s)

Figure 2. Pulse Power or Current versus Initial Junction

Temperature

Figure 5. Typical Transient Thermal Impedance

150

200

100

T^j= 25 °C

Pulse Width (td)

is defined as the point

where the peak current

decays to 50 % of I^PPM

8.3 ms Single Half Sine-Wave

Unidirectional Only

tr = 10 µsec

Peak Value

I^PPM

100

IPP

Half Value -

I^PPM

10/1000 µsec Waveform

as defined by R.E.A.

1.0

3.0

4.0

2.0

100

t - Time (ms)

Number of Cycles at 60 Hz

Figure 3. Pulse Waveform

Figure 6. Maximum Non-Repetitive Peak Forward Surge Current

Document Number 88385

08-Sep-06

www.vishay.com

SM6T Series

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AA (SMB)

Mounting Pad Layout

Cathode Band

0.085 MAX.

(2.159 MAX.)

0.086 (2.20)

0.155 (3.94)

0.130 (3.30)

0.077 (1.95)

0.086 MIN.

(2.18 MIN.)

0.180 (4.57)

0.160 (4.06)

0.060 MIN.

(1.52 MIN.)

0.012 (0.305)

0.006 (0.152)

0.220 REF

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

0.220 (5.59)

0.205 (5.21)

www.vishay.com

Document Number 88385

08-Sep-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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