SM8S12/2D [VISHAY]

Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional,;
SM8S12/2D
型号: SM8S12/2D
厂家: VISHAY    VISHAY
描述:

Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional,

文件: 总4页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SM8S Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount Automotive Transient Voltage Suppressors  
Stand-off Voltage 10 to 43V  
Peak Pulse Power 6600W (10/1000µs)  
5200W (10/10,000µs)  
DO-218AB  
0.628(16.0)  
0.592(15.0)  
0.539(13.7)  
0.524(13.3)  
0.116(3.0)  
0.093(2.4)  
0.413(10.5) 0.342(8.7)  
0.374(9.5) 0.327(8.3)  
Mounting Pad Layout  
0.091(2.3)  
0.067(1.7)  
0.366(9.3)  
0.343(8.7)  
0.116(3.0)  
0.093(2.4)  
0.413(10.5)  
0.374(9.5)  
0.406(10.3)  
0.382(9.7)  
Dimensions in  
inches and (millimeters)  
LEAD 1  
0.150(3.8)  
0.366(9.3)  
0.138(3.5)  
0.098(2.5)  
0.126(3.2)  
0.343(8.7)  
0.197(5.0)  
0.185(4.7)  
0.606(15.4)  
0.583(14.8)  
0.028(0.7)  
0.020(0.5)  
0.016 (0.4) Min.  
*
Patent #’s:  
4,980,315  
5,166,769  
5,278,095  
0.098(2.5)  
0.059(1.5)  
LEAD 2/METAL HEATSINK  
Features  
Mechanical Data  
• Ideally suited for load dump protection  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• High temperature stability due to unique oxide passiva-  
tion and patented PAR® construction  
• Integrally molded heatsink provides a very low thermal  
resistance for maximum heat dissipation  
• Low leakage current at TJ = 175°C  
Case: Molded plastic body, surface mount with heatsink  
integrally mounted in the encapsulation  
Terminals: Plated, solderable per MIL-STD-750, Method 2026  
Polarity: Heatsink is anode  
Mounting Position: Any  
Weight: 0.091 oz., 2.58 g  
Packaging codes/options:  
• High temperature soldering guaranteed:  
260°C for 10 seconds at terminals  
• Meets ISO7637-2 surge spec.  
2D/750 per 13" Reel (16mm Tape),  
anode towards sprocket hole, 4.5K/box  
2E/750 per 13" Reel (16mm Tape),  
cathode towards sprocket hole, 4.5K/box  
• Low forward voltage drop  
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)  
C
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with 10/1000µs waveform  
10/10,000µs waveform  
6600  
5200  
PPPM  
W
Steady state power dissipation  
PD  
IPPM  
8.0  
See Table 1  
700  
W
A
Peak pulse current with a 10/1000µs waveform(1)  
Peak forward surge current, 8.3ms single half sine-wave  
Typical thermal resistance junction to case  
Operating junction and storage temperature range  
IFSM  
A
RθJC  
0.90  
°C/W  
°C  
TJ, TSTG  
-55 to +175  
Notes: (1) Non-repetitive current pulse derated above TA=25°C  
Document Number 88387  
04-Jun-04  
www.vishay.com  
1
SM8S Series  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics (T = 25°C unless otherwise noted)  
C
Maximum Maximum Max. Peak Maximum  
Reverse  
Leakage  
at VWM  
ID  
Reverse  
Leakage  
at VWM  
Pulse  
Current  
Clamping  
Voltage at  
IPPM  
Device Type  
Breakdown Voltage  
Test Current Stand-off  
V(BR)  
(V)  
IT  
Voltage  
VWM  
at 10/1000µs  
Tc = 175oC Waveform  
VC  
Min.  
11.1  
11.1  
12.2  
12.2  
13.3  
13.3  
14.4  
14.4  
15.6  
15.6  
16.7  
16.7  
17.8  
17.8  
18.9  
18.9  
20.0  
20.0  
22.2  
22.2  
24.4  
24.4  
26.7  
26.7  
28.9  
28.9  
31.1  
31.1  
33.3  
33.3  
36.7  
36.7  
40.0  
40.0  
44.4  
44.4  
47.8  
47.8  
Max.  
13.6  
12.3  
14.9  
13.5  
16.3  
14.7  
17.6  
15.9  
19.1  
17.2  
20.4  
18.5  
21.8  
19.7  
23.1  
20.9  
24.4  
22.1  
27.1  
24.5  
29.8  
26.9  
32.6  
29.5  
35.3  
31.9  
38.0  
34.4  
40.7  
36.8  
44.9  
40.6  
48.9  
44.2  
54.3  
49.1  
58.4  
52.8  
(mA)  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
(V)  
10  
10  
11  
11  
12  
12  
13  
13  
14  
14  
15  
15  
16  
16  
17  
17  
18  
18  
20  
20  
22  
22  
24  
24  
26  
26  
28  
28  
30  
30  
33  
33  
36  
36  
40  
40  
43  
43  
(µA)  
15  
15  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
ID(µA)  
250  
250  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
(A)  
351  
388  
328  
363  
300  
332  
277  
307  
256  
284  
245  
270  
229  
254  
216  
239  
205  
226  
184  
204  
168  
186  
153  
170  
142  
157  
132  
145  
123  
136  
112  
124  
103  
114  
92.4  
102  
86.0  
95.1  
(V)  
SM8S10  
SM8S10A  
SM8S11  
18.8  
17.0  
20.1  
18.2  
22.0  
19.9  
23.8  
21.5  
25.8  
23.2  
26.9  
24.4  
28.8  
26.0  
30.5  
27.6  
32.2  
29.2  
35.8  
32.4  
39.4  
35.5  
43.0  
38.9  
46.6  
42.1  
50.1  
45.4  
53.5  
48.4  
59.0  
53.3  
64.3  
58.1  
71.4  
64.5  
76.7  
69.4  
SM8S11A  
SM8S12  
SM8S12A  
SM8S13  
SM8S13A  
SM8S14  
SM8S14A  
SM8S15  
SM8S15A  
SM8S16  
SM8S16A  
SM8S17  
SM8S17A  
SM8S18  
SM8S18A  
SM8S20  
SM8S20A  
SM8S22  
SM8S22A  
SM8S24  
SM8S24A  
SM8S26  
SM8S26A  
SM8S28  
SM8S28A  
SM8S30  
SM8S30A  
SM8S33  
SM8S33A  
SM8S36  
SM8S36A  
SM8S40  
SM8S40A  
SM8S43  
SM8S43A  
Note: For all types maximum VF = 1.8V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
www.vishay.com  
2
Document Number 88387  
04-Jun-04  
SM8S Series  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Load Dump Power Characteristics  
(10ms Exponential Waveform)  
Power Derating Curve  
6,000  
8.0  
5,000  
4,000  
3,000  
2,000  
6.0  
4.0  
2.0  
0
1,000  
0
50  
75  
150  
175  
50  
150  
200  
25  
100  
125  
0
100  
Case Temperature (°C)  
Case Temperature (°C)  
Pulse Waveform  
Reverse Power Capability  
10,000  
150  
TA = 25°C  
Pulse width (td) is defined as  
the point where the peak  
tr = 10µs  
current decays to 50% of IPP  
Peak Value IPP  
100  
50  
0
IPP  
2
Half Value –  
td  
1,000  
10  
30  
40  
0
20  
10  
100  
Pulse Width (ms) – 1/2 IPP Exponential Waveform  
Time, ms (t)  
Typical Transient Thermal Impedance  
100  
10  
RΘJA  
RΘJC  
1
0.1  
0.01  
0.1  
1
10  
0.01  
100  
t – Pulse Width (sec.)  
Document Number 88387  
04-Jun-04  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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