SM8S22A [VISHAY]
Surface Mount Automotive Transient Voltage Suppressors; 表面贴装汽车瞬态电压抑制器
| 型号： | SM8S22A |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount Automotive Transient Voltage Suppressors |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM8S Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive Transient Voltage Suppressors
Stand-off Voltage 10 to 43V
Peak Pulse Power 6600W (10/1000µs)
5200W (10/10,000µs)
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
Mounting Pad Layout
0.091(2.3)
0.067(1.7)
0.366(9.3)
0.343(8.7)
0.116(3.0)
0.093(2.4)
0.413(10.5)
0.374(9.5)
0.406(10.3)
0.382(9.7)
Dimensions in
inches and (millimeters)
LEAD 1
0.150(3.8)
0.366(9.3)
0.138(3.5)
0.098(2.5)
0.126(3.2)
0.343(8.7)
0.197(5.0)
0.185(4.7)
0.606(15.4)
0.583(14.8)
0.028(0.7)
0.020(0.5)
0.016 (0.4) Min.
*
Patent #’s:
4,980,315
5,166,769
5,278,095
0.098(2.5)
0.059(1.5)
LEAD 2/METAL HEATSINK
Features
Mechanical Data
• Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High temperature stability due to unique oxide passiva-
tion and patented PAR® construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at TJ = 175°C
Case: Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals: Plated, solderable per MIL-STD-750, Method 2026
Polarity: Heatsink is anode
Mounting Position: Any
Weight: 0.091 oz., 2.58 g
Packaging codes/options:
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
• Low forward voltage drop
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
6600
5200
PPPM
W
Steady state power dissipation
PD
IPPM
8.0
See Table 1
700
W
A
Peak pulse current with a 10/1000µs waveform(1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
IFSM
A
RθJC
0.90
°C/W
°C
TJ, TSTG
-55 to +175
Notes: (1) Non-repetitive current pulse derated above TA=25°C
Document Number 88387
04-Jun-04
www.vishay.com
1
SM8S Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T = 25°C unless otherwise noted)
C
Maximum Maximum Max. Peak Maximum
Reverse
Leakage
at VWM
ID
Reverse
Leakage
at VWM
Pulse
Current
Clamping
Voltage at
IPPM
Device Type
Breakdown Voltage
Test Current Stand-off
V(BR)
(V)
IT
Voltage
VWM
at 10/1000µs
Tc = 175oC Waveform
VC
Min.
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
Max.
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
(V)
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
(µA)
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
ID(µA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
(A)
351
388
328
363
300
332
277
307
256
284
245
270
229
254
216
239
205
226
184
204
168
186
153
170
142
157
132
145
123
136
112
124
103
114
92.4
102
86.0
95.1
(V)
SM8S10
SM8S10A
SM8S11
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
SM8S11A
SM8S12
SM8S12A
SM8S13
SM8S13A
SM8S14
SM8S14A
SM8S15
SM8S15A
SM8S16
SM8S16A
SM8S17
SM8S17A
SM8S18
SM8S18A
SM8S20
SM8S20A
SM8S22
SM8S22A
SM8S24
SM8S24A
SM8S26
SM8S26A
SM8S28
SM8S28A
SM8S30
SM8S30A
SM8S33
SM8S33A
SM8S36
SM8S36A
SM8S40
SM8S40A
SM8S43
SM8S43A
Note: For all types maximum VF = 1.8V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
www.vishay.com
2
Document Number 88387
04-Jun-04
SM8S Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Load Dump Power Characteristics
(10ms Exponential Waveform)
Power Derating Curve
6,000
8.0
5,000
4,000
3,000
2,000
6.0
4.0
2.0
0
1,000
0
50
75
150
175
50
150
200
25
100
125
0
100
Case Temperature (°C)
Case Temperature (°C)
Pulse Waveform
Reverse Power Capability
10,000
150
TA = 25°C
Pulse width (td) is defined as
the point where the peak
tr = 10µs
current decays to 50% of IPP
Peak Value IPP
100
50
0
IPP
2
Half Value –
td
1,000
10
30
40
0
20
10
100
Pulse Width (ms) – 1/2 IPP Exponential Waveform
Time, ms (t)
Typical Transient Thermal Impedance
100
10
RΘJA
RΘJC
1
0.1
0.01
0.1
1
10
0.01
100
t – Pulse Width (sec.)
Document Number 88387
04-Jun-04
www.vishay.com
3
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