SMA6F18A-M3/6A
更新时间:2024-09-18 19:07:44
品牌:VISHAY
描述:Trans Voltage Suppressor Diode, 4000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-221AC, SMA, 2 PIN
SMA6F18A-M3/6A 概述
Trans Voltage Suppressor Diode, 4000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-221AC, SMA, 2 PIN 瞬态抑制器
SMA6F18A-M3/6A 规格参数
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-F2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
Factory Lead Time: | 12 weeks | 风险等级: | 5.57 |
其他特性: | EXCELLENT CLAMPING CAPABILITY | 最大击穿电压: | 22.1 V |
最小击穿电压: | 20 V | 击穿电压标称值: | 21.05 V |
最大钳位电压: | 33.2 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-221AC | JESD-30 代码: | R-PDSO-F2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 4000 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 1 W | 参考标准: | IEC61000-4-2 |
最大重复峰值反向电压: | 18 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Matte Tin (Sn) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
SMA6F18A-M3/6A 数据手册
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PDF下载SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
®
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
SlimSMATM
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Uni-directional only
• Excellent clamping capability
• Peak pulse power:
- 600 W (10/1000 μs)
- 4 kW (8/20 μs)
Bottom View
Top View
DO-221AC
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRIMARY CHARACTERISTICS
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VBR
6.4 V to 24.5 V
VWM
5.0 V to 20 V
600 W
MECHANICAL DATA
P
PPM (10 x 1000 μs)
Case: DO-221AC (SlimSMA)
PPPM (8 x 20 μs)
4000 W
Molding compound meets UL 94 V-0 flammability rating
P
D at TM = 55 °C
6 W
Base P/N-M3
- halogen-free, RoHS-compliant, and
TJ max.
175 °C
commercial grade
Polarity
Uni-directional
DO-221AC (SlimSMA)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
Package
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
600
UNIT
with a 10/1000 μs waveform
Peak pulse power dissipation
(1)
PPPM
W
with a 8/20 μs waveform
4000
with a 10/1000 μs waveform
Peak pulse current
(1)
IPPM
See next table
A
W
°C
with a 8/20 μs waveform
(2)
T
M = 55 °C
PD
6
Power dissipation
(3)
TA = 25 °C
PD
1.0
Storage temperature range
TSTG
TJ
-65 to +175
-55 to +175
Operating junction temperature range
Notes
(1)
(2)
(3)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
Power dissipation mounted on infinite heatsink
Power dissipation mounted on minimum recommended pad layout
Revision: 10-Dec-13
Document Number: 89458
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
INDEX OF SYMBOLS
IF
SYMBOL
VWM
VBR
VC
PARAMETER
Stand-off voltage
Breakdown voltage
VWM
VBR
VC
Clamping voltage
V
ID
Leakage current at VWM
Peak pulse current
VF
ID
IT
IPP
T
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
VF
IPP
RD
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
(2)
(2)
MAXIMUM
REVERSE
LEAKAGE
VC AT IPP
10/1000 μs
MAX.
RD
VC AT IPP
8/20 μs
RD
BREAKDOWN STAND-OFF
VOLTAGE
VOLTAGE
VWM
T (3)
DEVICE
MARKING
CODE
(1)
DEVICE
V
BR AT IT
(3)
ID AT VWM
TYPE
MIN. MAX.
V
25 °C 85 °C
μA
MAX.
MAX.
10-4/°C
5.7
mA
V
5
V
V
A
V
A
SMA6F5.0A
SMA6F6.0A
SMA6F6.5A
SMA6F7.5A
SMA6F8.0A
SMA6F8.5A
SMA6F10A
SMA6F11A
SMA6F12A
SMA6F12AHD
SMA6F13A
SMA6F15A
SMA6F16A
SMA6F17A
SMA6F18A
SMA6F20A
6AE
6AG
6AK
6AP
6AR
6AT
6AX
6AZ
6BE
6BF
6BG
6BM
6BP
6BR
6BT
6BV
6.40 7.07 10
6.70 7.41 10
7.20 7.96 10
150
375
5.0
9.2
9.5
68.0 0.031 13.4
63.2 0.033 13.7
298 0.021
290 0.022
276 0.024
235 0.033
220 0.038
205 0.040
184 0.040
172 0.047
157 0.056
157 0.055
147 0.064
123 0.075
119 0.082
111 0.095
102 0.109
6
600 1500 6.0
5.9
6.5
7.5
8.0
8.5
10
11
12
12
13
15
16
17
18
20
100
50
250
125
50
6.5
7.5
8.0
8.5
10
11
12
12
13
15
16
17
18
20
10.2 58.8 0.038 14.5
11.8 50.8 0.051 17.0
12.8 46.9 0.063 18.2
13.3 45.1 0.064 18.7
15.7 38.2 0.089 19.6
17.2 34.8 0.107 21.5
18.8 31.9 0.128 23.5
18.5 32.4 0.130 22.9
20.4 29.4 0.153 23.9
23.6 25.4 0.201 27.7
25.2 23.8 0.229 29.5
26.7 22.5 0.259 31.4
28.3 21.2 0.292 33.2
31.4 19.1 0.361 36.8
6.1
8.33 9.21
8.89 9.83
9.4 10.4
11.1 12.3
12.2 13.5
13.3 14.7
13.2 14.3
14.4 15.9
16.7 18.5
17.8 19.7
18.9 20.9
20.0 22.1
22.2 24.5
1
1
1
1
1
1
1
1
1
1
1
1
1
6.5
20
7.0
20
50
7.3
1.0
1.0
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.8
8.1
8.3
8.4
8.4
8.8
8.8
9.0
9.2
93
0.132
9.4
Notes
(1)
(2)
(3)
Pulse test: tp 50 ms
To calculate maximum clamping voltage at other surge currents, use following formula: VCL max. = RD x IPP + VBR max.
To calculate VBR vs. junction temperature, use following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
150
UNIT
(1)
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to mount
RJA
°C/W
°C/W
(2)
RJM
20
Notes
(1)
Mounted on minimum recommended pad layout
Mounted on infinite heatsink
(2)
Revision: 10-Dec-13
Document Number: 89458
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
> 8 kV
Human body model (contact mode)
Human body model (air discharge mode)
IEC 61000-4-2
C = 150 pF, R = 330
VC
4
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
SMA6F5.0A-M3/6A
SMA6F5.0A-M3/6B
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.032
0.032
6A
6B
3500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
14 000
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
100
50
100
10
1
TJ = 25 °C
Pulse Width (td) is
defined as the Point
Where the Peak Current
decays to 50 % of IPPM
tr = 10 μs
tr = 8 μs
Peak Value
IPPM
Half Value - IPP
IPPM
2
td = 1000 μs
td = 20 μs
td
0
0.1
0
1.0
2.0
3.0
4.0
1
10
100
1 000
10 000
td - Pulse Width (μs)
t - Time (ms)
Fig. 3 - Pulse Waveform
Fig. 1 - Peak Pulse Power Rating Curve
10 000
1000
100
100
TJ = 25 °C
f = 1.0 MHz
sig = 50 mVp-p
V
75
50
25
0
Measured at Zero Bias
Measured at Stand-off
Voltage, VWM
5
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
0
25
50
75
100 125 150 175 200
VWM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 10-Dec-13
Document Number: 89458
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
1000
100
10
7
6
5
4
3
2
1
0
T =T , mounted on inifinite
A
M
heatsink
FR-4 Board, on Minimum
Recommended Pad Layout
1
0.01
0.1
1
10
100
1000
0
25
50
75
100 125 150 175 200
TA - Ambient Temperature (°C)
Fig. 5 - Power Dissipation Derating Curve
tp - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-221AC (SlimSMA)
Cathode Band
0.057 (1.45)
0.049 (1.25)
0.106 (2.70)
0.098 (2.50)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.047 (1.20)
0.030 (0.75)
Typ.: 0.019 (0.48)
Mounting Pad Layout
0.039 (1.00)
0.035 (0.90)
0.060 (1.52)
MIN.
0.012 (0.30)
0.006 (0.15)
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.047 (1.20)
MIN.
0.047 (1.20)
MIN.
Revision: 10-Dec-13
Document Number: 89458
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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