SMA6J8.0A-M3/61 [VISHAY]

Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN;
SMA6J8.0A-M3/61
型号: SMA6J8.0A-M3/61
厂家: VISHAY    VISHAY
描述:

Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

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SMA6J5.0A thru SMA6J28A  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Available in uni-directional polarity only  
• Excellent clamping capability  
• AEC-Q101 qualified  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 28 V  
MECHANICAL DATA  
VBR  
6.4 V to 34.4 V  
600 W  
Case: DO-214AC (SMA)  
P
PPM (10 x 1000 μs)  
Molding compound meets UL 94 V-0 flammability rating  
P
PPM (8 x 20 μs)  
4000 W  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
-
halogen-free, RoHS-compliant, and  
PD at TA = 50 °C  
4 W  
-
halogen-free, RoHS-compliant, and  
IFSM  
50 A  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
Polarity  
Uni-directional  
DO-214AC (SMA)  
Package  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)  
Peak pulse power dissipation with a 8/20 μs waveform  
Peak pulse current with a 10/1000 μs waveform (1)(2)  
PPPM  
W
4000  
IPPM  
See next table  
A
Peak pulse current with a 8/20 μs waveform  
Power dissipation on infinite heatsink, TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
PD  
IFSM  
4.0  
50  
W
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 1 and derated above TA = 25 °C per fig. 2.  
Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal  
(2)  
Revision: 13-May-14  
Document Number: 89460  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SMA6J5.0A thru SMA6J28A  
www.vishay.com  
Vishay General Semiconductor  
I
INDEX OF SYMBOLS  
IF  
SYMBOL  
VWM  
VBR  
VC  
PARAMETER  
Stand-off voltage  
Breakdown voltage  
VWM  
VBR  
VC  
Clamping voltage  
ID  
Leakage current at VWM  
Peak pulse current  
VF  
V
ID  
IT  
IPP  
T  
Voltage temperature coefficient  
Forward voltage drop  
Dynamic resistance  
VF  
IPP  
RD  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
(2)  
(2)  
BREAKDOWN  
MAXIMUM  
VC AT IPP  
10/1000 μs  
MAX.  
RD  
VC AT IPP  
RD  
VOLTAGE  
REVERSE LEAKAGE  
T (3)  
DEVICE  
MARKING  
CODE  
8/20 μs  
(1)  
DEVICE  
TYPE  
V
BR AT IT  
ID AT VWM  
MIN. MAX.  
V
25 °C 85 °C  
μA  
MAX.  
V
MAX.  
10-4/°C  
5.7  
mA  
10  
10  
10  
1
V
V
A
A
SMA6J5.0A  
SMA6J6.0A  
SMA6J6.5A  
SMA6J7.5A  
SMA6J8.0A  
SMA6J8.5A  
SMA6J10A  
SMA6J11A  
SMA6J12A  
SMA6J13A  
SMA6J15A  
SMA6J16A  
SMA6J17A  
SMA6J18A  
SMA6J20A  
SMA6J22A  
SMA6J24A  
SMA6J26A  
SMA6J28A  
6AE  
6AG  
6AK  
6AP  
6AR  
6AT  
6AX  
6AZ  
6BE  
6BG  
6BM  
6BP  
6BR  
6BT  
6BV  
6BX  
6BZ  
6CE  
6CG  
6.4  
7.07  
7.41  
7.96  
9.21  
9.83  
10.4  
12.3  
13.5  
14.7  
15.9  
18.5  
19.7  
20.9  
22.1  
24.5  
26.9  
29.5  
31.9  
34.4  
150  
600  
100  
50  
375  
1500  
250  
125  
50  
50  
5
5.0  
6.0  
6.5  
7.5  
8.0  
8.5  
10  
11  
12  
13  
15  
16  
17  
18  
20  
22  
24  
26  
28  
9.1  
65.9  
63.2  
58.8  
50.8  
48.0  
45.1  
38.2  
34.8  
31.9  
29.4  
25.4  
23.8  
22.5  
21.2  
19.1  
17.4  
15.9  
14.7  
13.6  
0.031  
0.033  
0.038  
0.051  
0.056  
0.064  
0.089  
0.107  
0.128  
0.153  
0.201  
0.229  
0.259  
0.292  
0.361  
0.437  
0.523  
0.614  
0.704  
13.4  
298  
290  
276  
235  
220  
205  
184  
172  
157  
147  
123  
119  
111  
102  
93  
0.021  
0.022  
0.024  
0.033  
0.038  
0.040  
0.040  
0.047  
0.056  
0.054  
0.075  
0.083  
0.094  
0.109  
0.132  
0.152  
0.185  
0.213  
0.253  
6.7  
9.5  
13.7  
14.5  
17.0  
18.2  
18.7  
19.6  
21.5  
23.5  
23.9  
27.7  
29.5  
31.4  
33.2  
36.8  
40.4  
44.3  
47.9  
51.6  
5.9  
6.1  
6.5  
7.0  
7.3  
7.8  
8.1  
8.3  
8.4  
8.8  
8.8  
9.0  
9.2  
9.4  
9.5  
9.6  
9.7  
9.8  
7.2  
10.2  
11.8  
12.5  
13.3  
15.7  
17.2  
18.8  
20.4  
23.6  
25.2  
26.7  
28.3  
31.4  
34.5  
37.8  
40.9  
44.0  
8.33  
8.89  
9.4  
1
20  
1
20  
11.1  
12.2  
13.3  
14.4  
16.7  
17.8  
18.9  
20.0  
22.2  
24.4  
26.7  
28.9  
31.1  
1
1
1
1
5
1
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
89  
1
1
80  
1
1
75  
1
1
68  
Notes  
(1)  
(2)  
(3)  
(4)  
Pulse test: tp 50 ms  
To calculate maximum clamping voltage at other surge currents, use the following formula: VCLmax. = RD x IPP + VBRmax.  
To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25)  
VF = 3.5 V at IF = 25 A, pulse test: 300 µs pulse width  
Revision: 13-May-14  
Document Number: 89460  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SMA6J5.0A thru SMA6J28A  
www.vishay.com  
Vishay General Semiconductor  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
120  
UNIT  
Typical thermal resistance, junction to ambient (1)  
RJA  
°C/ W  
Typical thermal resistance, junction to lead  
RJL  
25  
Note  
(1)  
Mounted on minimum recommended pad layout  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g) PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
SMA6J5.0A-M3/61  
SMA6J5.0A-M3/5A  
SMA6J5.0AHM3/61 (1)  
SMA6J5.0AHM3/5A (1)  
0.064  
0.064  
0.064  
0.064  
61  
5A  
61  
5A  
1800  
7500  
1800  
7500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
Note  
(1)  
AEC-Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
100  
150  
100  
50  
tr = 10 µs  
tr = 8 µs  
TJ = 25 °C  
Pulse Width (td)  
is defined as the Point  
where the Peak Current  
decays to 50 % of IPPM  
Peak Value  
IPPM  
10  
Half Value - IPP  
IPPM  
2
1
td = 1000 µs  
td = 20 µs  
td  
0.1  
0.1  
0
1
10  
100  
1000  
10 000  
0
1.0  
2.0  
t - Time (ms)  
3.0  
4.0  
Pulse Width (µs) - ½ IPP Exponential Waveform  
Fig. 1 - Peak Pulse Power Rating Curve  
Fig. 3 - Pulse Waveform  
10 000  
1000  
100  
100  
75  
50  
25  
0
Measured at Zero Bias  
Measured at Stand-off  
Voltage VWM  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
10  
1
10  
100  
0
25  
50  
75 100 125 150 175 200  
Reverse Voltage (V)  
TJ - Initial Temperature  
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature  
Fig. 4 - Typical Junction Capacitance  
Revision: 13-May-14  
Document Number: 89460  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SMA6J5.0A thru SMA6J28A  
www.vishay.com  
Vishay General Semiconductor  
100  
10  
1000  
SMA6J5.0A to SMA6J8.0A  
TA = 150 °C  
100  
10  
SMA6J8.5A to SMA6J28A  
1
TA = 150 °C  
0.1  
1
SMA6J5.0A to SMA6J28A  
T
A = 25 °C  
0.01  
0.1  
0.001  
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
0.01  
0.1  
1
10  
100  
1000  
Forward Voltage (V)  
t - Pulse Duration (s)  
Fig. 5 - Typical Forward Characteristics  
Fig. 6 - Typical Transient Thermal Impedance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-214AC (SMA)  
Cathode Band  
Mounting Pad Layout  
0.074 (1.88)  
MAX.  
0.066 (1.68)  
MIN.  
0.110 (2.79)  
0.100 (2.54)  
0.065 (1.65)  
0.049 (1.25)  
0.177 (4.50)  
0.157 (3.99)  
0.060 (1.52)  
MIN.  
0.012 (0.305)  
0.006 (0.152)  
0.208 (5.28)  
REF.  
0.087 (2.20)  
0.078 (1.98)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
0 (0)  
0.208 (5.28)  
0.194 (4.93)  
Revision: 13-May-14  
Document Number: 89460  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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Vishay  
Disclaimer  
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
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Revision: 02-Oct-12  
Document Number: 91000  
1

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