SMAJ48AHM3/H [VISHAY]
Trans Voltage Suppressor Diode,;
| 型号： | SMAJ48AHM3/H |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, |
| 文件： | 总5页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMAJ5.0A thru SMAJ188CA
www.vishay.com
Vishay General Semiconductor
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
Available
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 % (300 W above 78 V)
• Excellent clamping capability
• Very fast response time
SMA (DO-214AC)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR uni-directional
6.40 V to 231 V
V
BR bi-directional
6.40 V to 231 V
5.0 V to 188 V
TYPICAL APPLICATIONS
VWM
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PPPM
400 W, 300 W
IFSM
40 A
TJ max.
Polarity
Package
150 °C
Uni-directional, bi-directional
SMA (DO-214AC)
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
DEVICES FOR BI-DIRECTION APPLICATIONS
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
For bi-directional use CA suffix (e.g. SMAJ10CA).
Electrical characteristics apply in both directions.
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a waveform (1)
SYMBOL
PPPM
VALUE
400
UNIT
W
IPPM
See next table
40
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. Rating is 300 W above 78 V
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 14-Jul-17
Document Number: 88390
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMAJ5.0A thru SMAJ188CA
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
MAXIMUM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
DEVICE MARKING
CODE
VOLTAGE
PEAK PULSE CLAMPING
(1)
V
BR AT IT
(V)
DEVICE TYPE
SURGE
VOLTAGEAT
IPPM
CURRENT
(mA)
(V)
ID (μA) (3)
I
PPM (A) (2)
VC (V)
UNI
BI
MIN.
MAX.
SMAJ5.0A (5)
SMAJ6.0A
SMAJ6.5A
SMAJ7.0A
SMAJ7.5A
SMAJ8.0A
SMAJ8.5A
SMAJ9.0A
SMAJ10A
SMAJ11A
SMAJ12A
SMAJ13A
SMAJ14A
SMAJ15A
SMAJ16A
SMAJ17A
SMAJ18A
SMAJ20A
SMAJ22A
SMAJ24A
SMAJ26A
SMAJ28A
SMAJ30A
SMAJ33A
SMAJ36A
SMAJ40A
SMAJ43A
SMAJ45A
SMAJ48A
SMAJ51A
SMAJ54A
SMAJ58A
SMAJ60A
SMAJ64A
SMAJ70A
SMAJ75A
SMAJ78A
SMAJ85A
SMAJ90A
SMAJ100A
SMAJ110A
SMAJ120A
SMAJ130A
SMAJ150A
SMAJ160A
SMAJ170A
SMAJ188A
AE
AG
AK
AM
AP
AR
AT
WE
WG
WK
WM
WP
WR
WT
WV
WX
WZ
XE
XG
XK
XM
XP
XR
XT
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
10
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
800
800
500
200
100
50
43.5
38.8
35.7
33.3
31.0
29.4
27.8
26.0
23.5
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.8
5.5
5.2
4.9
4.6
4.3
4.1
3.9
3.5
3.3
3.2
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
RE
RG
RK
RM
RP
RR
RT
RV
RX
RZ
SE
VG
VK
VM
SP
SR
SS
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
XV
XX
XZ
YE
YG
YK
YM
YP
YR
YT
YV
YX
YZ
ZE
ZG
ZK
ZM
ZP
ZR
ZT
ZV
ZX
ZZ
VE
VG
VK
VM
VP
VR
VS
113
121
126
137
146
162
177
193
209
243
259
275
85
90
2.2
2.1
1.9
1.7
1.6
1.4
1.2
1.2
111
123
135
147
159
185
197
209
111
122
133
144
167
178
189
209
100
110
120
130
150
160
170
188
1.09
0.91
231
328
Notes
(1)
(2)
(3)
(4)
(5)
(6)
Pulse test: tp ≤ 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
For bi-directional types having VWM of 10 V and less, the ID limit is doubled
All terms and symbols are consistent with ANSI/IEEE C62.35
For the bi-directional SMAJ5.0CA, the maximum VBR is 7.25 V
VF = 3.5 V at IF = 25 A (uni-directional only)
Revision: 14-Jul-17
Document Number: 88390
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMAJ5.0A thru SMAJ188CA
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RθJA
RθJL
VALUE
120
30
UNIT
°C/W
°C/W
Typical thermal resistance, junction to ambient (1)
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMAJ5.0A-E3/61
SMAJ5.0A-E3/5A
SMAJ5.0AHE3/61(1)
SMAJ5.0AHE3/5A (1)
SMAJ5.0A-M3/61
SMAJ5.0A-M3/5A
SMAJ5.0AHM3/H (1)
SMAJ5.0AHM3/I (1)
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.064
0.064
0.064
0.064
0.064
0.064
0.064
0.064
61
5A
61
5A
61
5A
H
1800
7500
1800
7500
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
I
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10
150
100
50
tr = 10 μs
TJ = 25 °C
Pulse Width (td)
is Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Non-Repetitive Pulse
Waveform Shown in Fig. 3
TA = 25 °C
Peak Value
IPPM
Half Value - IPP
IPPM
2
SMAJ5.0
thru SMAJ78
SMAJ85
thru SMAJ188
1
10/1000 μs Waveform
as Defined by R.E.A.
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
td
0.1
0
0.1
1
10
100
1000
10 000
1.0
3.0
4.0
0
2.0
t - Time (ms)
td - Pulse Width (μs)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
75
10 000
Measured at Stand-off
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Voltage VWM
1000
100
10
50
Uni-Directional
Bi-Directional
25
0
1
10
100
200
0
25
50
75
100
125 150 175 200
TJ - Initial Temperature (°C)
VWM - Reverse Stand-Off Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 14-Jul-17
Fig. 4 - Typical Junction Capacitance
Document Number: 88390
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMAJ5.0A thru SMAJ188CA
www.vishay.com
Vishay General Semiconductor
1000
200
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
100
50
100
10
1
10
0.001
0.01
0.1
1.0
10
100
1000
1
10
100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
0.066 (1.68)
MAX.
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 14-Jul-17
Document Number: 88390
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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Trans Voltage Suppressor Diode, 500W, 48V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, SIMILAR TO DO-214AC OR BA, SMAJ, 2 PIN
MICROSEMI
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