SMAJ550HE3_A/I [VISHAY]
Trans Voltage Suppressor Diode, 495V V(RWM), Unidirectional,;
| 型号： | SMAJ550HE3_A/I |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 495V V(RWM), Unidirectional, 局域网 光电二极管 |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMAJ530, SMAJ550
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional polarity only
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
VBR (uni-directional)
530 V to 550 V
VWM
477 V, 495 V
300 W
MECHANICAL DATA
PPPM
Case: DO-214AC (SMA)
PD
IFSM (uni-directional only)
TJ max.
2.5 W
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
40 A
150 °C
Polarity
Uni-directional
DO-214AC (SMA)
Package
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
APPLICATION NOTES
• Respect thermal resistance (PCB Layout) - as the
temperature coefficient also contributes to the clamping
voltage
Polarity: Color band denotes cathode end
• Select minimum breakdown voltage, so you get
acceptable power dissipation and PCB tie point
temperature
• Devices with higher breakdown voltage will have a shorter
conduction time and will dissipate less power
• Clamping voltage is influenced by internal resistance -
design approximation is 7 V per 100 mA slope
• Keep temperature of TVS lower than TOPSwitch® as a
recommendation
• Maximum current is determined by the maximum TJ and
can be higher than 300 mA
• Contact supplier for different clamping voltage/
current arrangements
• Minimum breakdown voltage can be customized for other
applications. Contact supplier
• TOPSwitch is
Integrations, Inc.
a
registered trademark of Power
Revision: 10-Dec-13
Document Number: 88391
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMAJ530, SMAJ550
Vishay General Semiconductor
www.vishay.com
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SMAJ530
SMAJ550
UNIT
Device marking code
HD
SB
Peak pulse power dissipation (1)(2)(4) (fig. 1)
Power dissipation on infinite heatsink (3)
Operating junction and storage temperature range
PPPM
PD
300
2.5
W
W
TJ, TSTG
- 55 to 150
°C
Notes
(1)
(2)
(3)
(4)
Non-repetitive current pulse, per fig. 3 and derated above 25 °C per fig. 2.
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Lead temperature at TL = 75 °C
Peak pulse power waveform is 10/1000 μs
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN VOLTAGE
TEST CURRENT
STAND-OFF VOLTAGE
VBR AT IT
(V)
DEVICE TYPE
IT
VWM
(V)
(μA)
MIN.
530
SMAJ530
SMAJ550
100
100
477
495
550
ADDITIONAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SMAJ530
SMAJ550
UNIT
V
Max. clamping voltage
400 mA, 10/1000 μs waveform
VC
ID
760
1.0
650
90
Maximum DC reverse leakage current
Typical temperature coefficient
VWM
μA
of VBR
0 V
mV/°C
Typical capacitance (1)
CJ
pF
200 V
7.5
Note
(1)
Measured at 1 MHz
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SMAJ530
SMAJ550
UNIT
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient (1)
RJL
30
°C/ W
RJA
120
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMAJ530-E3/61
0.064
0.064
0.064
0.064
0.064
0.064
61
5A
61
5A
H
1800
7500
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SMAJ530-E3/5A
SMAJ530HE3/61 (1)
SMAJ530HE3/5A (1)
SMAJ530HE3_A/H (1)
SMAJ530HE3_A/I (1)
I
Note
(1)
AEC-Q101 qualified
Revision: 10-Dec-13
Document Number: 88391
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMAJ530, SMAJ550
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
150
100
10
1
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
tr = 10 µs
Peak Value
IPPM
100
50
0
Half Value -
IPP
2
IPPM
10/1000 µs Waveform
as defined by R.E.A.
td
0.1
0.1 µs
1.0 µs
10 µs
td - Pulse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
100 µs
1.0 ms
10 ms
1.0
3.0
4.0
0
2.0
t - Time (ms)
Fig. 3 - Pulse Waveform
100
75
50
25
0
0
25
50
75
100 125
150 175
200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 10-Dec-13
Document Number: 88391
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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