SMB10J7.0-E3 [VISHAY]
Trans Voltage Suppressor Diode, 7V V(RWM), Unidirectional,;
| 型号： | SMB10J7.0-E3 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 7V V(RWM), Unidirectional, |
| 文件： | 总7页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
New Product
Vishay Semiconductors
formerly General Semiconductor
High Power Density Surface Mount TRANSZORB®
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 40V
DO-214AA (SMB)
Peak Pulse Power 1000W (unidirectional)
800W (bidirectional)
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.085 MAX
(2.16 MAX)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 MIN
(2.20 MIN)
0.096 (2.44)
0.084 (2.13)
0.060 MIN
(1.52 MIN)
Dimensions in inches
and (millimeters)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
Mechanical Data
Features
Case: JEDEC DO-214AA molded plastic over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
• 1000W for unidirectional and 800W for bidirectional
peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
Method 2026
High temperature soldering guaranteed:
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
250°C/10 seconds at terminals
• Low profile package with built-in strain relief for
surface mounted applications
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
• Glass passivated junction
• Low incremental surge resistance,
excellent clamping capability
Mounting Position: Any
Weight: 0.003oz., 0.093g
• Very fast response time
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMB8J10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
PPPM
IPPM
Value
Unit
Peak pulse power dissipation with
unidirectional
bidirectional
1000
800
W
a 10/1000µs waveform(1,2) (see fig. 1)
Peak pulse current with a 10/1000µs waveform(1)
See Next Table
100
A
Peak forward surge current 8.3ms single half sine-wave
uni-directional only(2)
IFSM
A
Typical thermal resistance, junction to ambient(3)
RθJA
RθJL
72
20
°C/W
°C/W
°C
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88422
11-Mar-04
www.vishay.com
1
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Unidirectional
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 50A (uni-directional only)
Breakdown
Voltage
Maximum
Reverse Leakage Peak Pulse Surge
Maximum
Maximum
Clamping
Voltage at I
PPM
Device Type
Device
Marking
Code
Test
Current
Stand-off
Voltage
V
(V)(1)
Max
at V
Current I
(A)(2)
(BR)
WM
PPM
Min
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
at I (mA)
V
(V)
I
D
(µA)
V (V)
C
T
WM
SMB10J5.0
SMB10J5.0A
SMB10J6.0
SMB10J6.0A
SMB10J6.5
SMB10J6.5A
SMB10J7.0
SMB10J7.0A
SMB10J7.5
SMB10J7.5A
SMB10J8.0
SMB10J8.0A
SMB10J8.5
SMB10J8.5A
SMB10J9.0
SMB10J9.0A
SMB10J10
SMB10J10A
SMB10J11
1AD
1AE
1AF
1AG
1AH
1AK
1AL
1AM
1AN
1AP
1AQ
1AR
1AS
1AT
1AU
1AV
1AW
1AX
1AY
1AZ
1BD
1BE
1BF
1BG
1BH
1BK
1BL
1BM
1BN
1BP
1BQ
1BR
1BS
1BT
1BU
1BV
1BW
1BX
1BY
1BZ
1CD
1CE
1CF
1CG
1CH
1CK
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
10
10
5.0
1000
1000
1000
1000
500
500
200
200
100
100
50
104.2
108.7
87.7
97.1
81.3
89.3
75.2
83.3
69.9
77.5
66.7
73.5
62.9
69.4
59.2
64.9
53.2
58.8
49.8
54.9
45.5
50.3
42.0
46.5
38.8
43.1
37.2
41.0
34.7
38.5
32.8
36.2
31.1
34.2
27.9
30.9
25.4
28.2
23.3
25.7
21.5
23.8
20.0
22.0
18.7
20.7
9.6
9.2
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
10
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
SMB10J11A
SMB10J12
SMB10J12A
SMB10J13
SMB10J13A
SMB10J14
SMB10J14A
SMB10J15
SMB10J15A
SMB10J16
SMB10J16A
SMB10J17
SMB10J17A
SMB10J18
SMB10J18A
SMB10J20
SMB10J20A
SMB10J22
SMB10J22A
SMB10J24
SMB10J24A
SMB10J26
SMB10J26A
SMB10J28
SMB10J28A
SMB10J30
SMB10J30A
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88422
11-Mar-04
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Unidirectional
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 50A (uni-directional only)
Breakdown
Voltage
Maximum
Maximum
Maximum
Device Type
Device
Marking
Code
Test
Current
Stand-off
Voltage
Reverse Leakage Peak Pulse Surge Clamping
V
(V)(1)
at V
Current I
(A)(2)
Voltage at I
PPM
(BR)
WM
PPM
Min
36.7
36.7
40.0
40.0
44.4
44.4
Max
at I (mA)
V
(V)
I
D
(µA)
V (V)
C
T
WM
SMB10J33
SMB10J33A
SMB10J36
SMB10J36A
SMB10J40
SMB10J40A
1CL
1CM
1CN
1CP
1CQ
1CR
44.9
40.6
48.9
44.2
54.3
49.1
1.0
1.0
1.0
1.0
1.0
1.0
33
1.0
16.9
18.8
15.6
17.2
14.0
15.5
59.0
53.3
64.3
58.1
71.4
64.5
33
36
36
40
40
1.0
1.0
1.0
1.0
1.0
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88422
11-Mar-04
www.vishay.com
3
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Bidirectional
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Breakdown
Voltage
Maximum
Maximum
Maximum
Clamping
Voltage at I
PPM
Device Type
Device
Marking
Code
Test
Stand-off
Voltage
Reverse Leakage Peak Pulse Surge
V
(V)(1)
Max
Current
at V
D
Current I
(A)(2)
(BR)
WM
PPM
Min
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
at I (mA)
V
(V)
I
(µA) (3)
V (V)
C
T
WM
SMB8J5.0C
SMB8J5.0CA
SMB8J6.0C
SMB8J6.0CA
SMB8J6.5C
SMB8J6.5CA
SMB8J7.0C
SMB8J7.0CA
SMB8J7.5C
SMB8J7.5CA
SMB8J8.0C
SMB8J8.0CA
SMB8J8.5C
SMB8J8.5CA
SMB8J9.0C
SMB8J9.0CA
SMB8J10C
SMB8J10CA
SMB8J11C
1AD
1AE
1AF
1AG
1AH
1AK
1AL
1AM
1AN
1AP
1AQ
1AR
1AS
1AT
1AU
1AV
1AW
1AX
1AY
1AZ
1BD
1BE
1BF
1BG
1BH
1BK
1BL
1BM
1BN
1BP
1BQ
1BR
1BS
1BT
1BU
1BV
1BW
1BX
1BY
1BZ
1CD
1CE
1CF
1CG
1CH
1CK
7.82
7.25
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
10
10
5.0
2000
2000
2000
2000
1000
1000
400
400
200
200
100
100
40
83.3
87.0
70.2
77.7
65.0
71.4
60.2
66.7
55.9
62.0
53.3
58.8
50.3
55.6
47.3
51.9
42.6
47.1
39.8
44.0
36.4
40.2
33.6
37.2
31.0
34.5
29.7
32.8
27.8
30.8
26.2
29.0
24.8
27.4
22.3
24.7
20.3
22.5
18.6
20.6
17.2
19.0
16.0
17.6
15.0
16.5
9.6
9.2
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
10
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
40
20
20
10
10
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
SMB8J11CA
SMB8J12C
SMB8J12CA
SMB8J13C
SMB8J13CA
SMB8J14C
SMB8J14CA
SMB8J15C
SMB8J15CA
SMB8J16C
SMB8J16CA
SMB8J17C
SMB8J17CA
SMB8J18C
SMB8J18CA
SMB8J20C
SMB8J20CA
SMB8J22C
SMB8J22CA
SMB8J24C
SMB8J24CA
SMB8J26C
SMB8J26CA
SMB8J28C
SMB8J28CA
SMB8J30C
SMB8J30CA
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
4
Document Number 88422
11-Mar-04
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Bidirectional
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Breakdown
Voltage
Maximum
Maximum
Maximum
Device Type
Device
Marking
Code
Test
Current
Stand-off
Voltage
Reverse Leakage Peak Pulse Surge Clamping
V
(V)(1)
at V
D
Current I
(A)(2)
Voltage at I
PPM
(BR)
WM
PPM
Min
36.7
36.7
40.0
40.0
44.4
44.4
Max
at I (mA)
V
(V)
I
(µA)(3)
1.0
V (V)
C
T
WM
SMB8J33C
SMB8J33CA
SMB8J36C
SMB8J36CA
SMB8J40C
SMB8J40CA
1CL
1CM
1CN
1CP
1CQ
1CR
44.9
40.6
48.9
44.2
54.3
49.1
1.0
1.0
1.0
1.0
1.0
1.0
33
13.6
15.0
12.4
13.8
11.2
12.4
59.0
53.3
64.3
58.1
71.4
64.5
33
36
36
40
40
1.0
1.0
1.0
1.0
1.0
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88422
11-Mar-04
www.vishay.com
5
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Pulse Derating Curve
Fig. 1 – Peak Pulse Power Rating Curve
100
100
10
1
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
75
50
SMB10J5.0 -
SMB10J40A
25
0
SMB8J5.0C -
0.2 x 0.2" (0.5 x 0.5mm)
SMB8J40CA
Copper Pad Areas
0.1
25
50
75
150
175
200
0
100
125
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td – Pulse Width (sec.)
TA – Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
Fig. 4 – Typical Junction Capacitance
10,000
1,000
100
150
100
50
TJ = 25°C
Pulse Width (td)
Measured at
Zero Bias
tr = 10µsec.
is defined as the point
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
Half Value – IPP
VR, Measured at
Stand-Off
Voltage, VWM
IPPM
2
10/1000µsec. Waveform
as defined by R.E.A.
Uni-
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
Directional
Bi-
td
0
10
Directional
1.0
3.0
4.0
0
2.0
1
10
100
VWM – Reverse Stand-Off Voltage (V)
t – Time (ms)
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Fig. 5 – Typical Transient Thermal
Impedance
100
200
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
10
1.0
10
0.01
0.1
1
10
100
1000
1
10
100
Number of Cycles at 60HZ
tp – Pulse Duration (sec)
www.vishay.com
6
Document Number 88422
11-Mar-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
SMB10J7.0-E3/2C
Trans Voltage Suppressor Diode, 1000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
VISHAY
SMB10J7.0-E3/51
Trans Voltage Suppressor Diode, 1000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
VISHAY
SMB10J7.0-E3/55
Trans Voltage Suppressor Diode, 1000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
VISHAY
SMB10J7.0-HE3/52
Trans Voltage Suppressor Diode, 1000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
VISHAY
SMB10J7.0A-E3
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient Suppressor
VISHAY
SMB10J7.0A-E3/51
Trans Voltage Suppressor Diode, 1000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
VISHAY
SMB10J7.0A-E3/55
Trans Voltage Suppressor Diode, 1000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
VISHAY
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