SMB10J7.5A-M3/5B [VISHAY]
DIODE TVS DIODE, Transient Suppressor;
| 型号： | SMB10J7.5A-M3/5B |
| 厂家： | 
VISHAY |
| 描述： | DIODE TVS DIODE, Transient Suppressor 局域网 光电二极管 电视 |
| 文件： | 总6页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
®
High Power Density Surface Mount TRANSZORB
Transient Voltage Supressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
PRIMARY CHARACTERISTICS
VWM
5.0 V to 40 V
P
PPM (uni-directional)
1000 W
800 W
100 A
MECHANICAL DATA
P
PPM (bi-directional)
Case: DO-214AC (SMA)
I
FSM (uni-directional only)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
150 °C
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
1000
UNIT
uni-directional
bi-directional
(1)(2)
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
PPPM
W
800
(1)
Peak pulse current with a 10/1000 μs waveform
IPPM
See next table
100
A
A
(2)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
IFSM
TJ, TSTG
- 55 to + 150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 13-Mar-12
Document Number: 89424
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
UNI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
MAXIMUM
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
STAND-OFF
VOLTAGE
VWM
MAXIMUM
PEAK PULSE
CURRENT
TEST CURRENT
REVERSE
LEAKAGE
AT VWM
DEVICE
MARKING
CODE
DEVICE
TYPE
V
BR AT IT (V) (1)
IT
(mA)
(V)
I
PPM (A) (2)
MIN.
MAX.
ID (μA)
VC (V)
SMB10J5.0A
SMB10J6.0A
SMB10J6.5A
SMB10J7.0A
SMB10J7.5A
SMB10J8.0A
SMB10J8.5A
SMB10J9.0A
SMB10J10A
SMB10J11A
SMB10J12A
SMB10J13A
SMB10J14A
SMB10J15A
SMB10J16A
SMB10J17A
SMB10J18A
SMB10J20A
SMB10J22A
SMB10J24A
SMB10J26A
SMB10J28A
SMB10J30A
SMB10J33A
SMB10J36A
SMB10J40A
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
1000
1000
500
200
100
50
108.7
97.1
89.3
83.3
77.5
73.5
69.4
64.9
58.8
54.9
50.3
46.5
43.1
41.0
38.5
36.2
34.2
30.9
28.2
25.7
23.8
22.0
20.7
18.8
17.2
15.5
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Notes
(1)
(2)
(3)
(4)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
VF = 3.5 V at IF = 25 A (uni-directional only)
Revision: 13-Mar-12
Document Number: 89424
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
BI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
MAXIMUM
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
STAND-OFF
VOLTAGE
VWM
MAXIMUM
PEAK PULSE
CURRENT
TEST CURRENT
REVERSE
LEAKAGE
AT VWM
DEVICE
MARKING
CODE
DEVICE
TYPE
V
BR (V) (1)
IT
(mA)
(V)
I
PPM (A) (2)
MIN.
MAX.
ID (μA) (3)
VC (V)
SMB8J5.0CA
SMB8J6.0CA
SMB8J6.5CA
SMB8J7.0CA
SMB8J7.5CA
SMB8J8.0CA
SMB8J8.5CA
SMB8J9.0CA
SMB8J10CA
SMB8J11CA
SMB8J12CA
SMB8J13CA
SMB8J14CA
SMB8J15CA
SMB8J16CA
SMB8J17CA
SMB8J18CA
SMB8J20CA
SMB8J22CA
SMB8J24CA
SMB8J26CA
SMB8J28CA
SMB8J30CA
SMB8J33CA
SMB8J36CA
SMB8J40CA
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
7.25
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
2000
2000
1000
400
200
100
40
87.0
77.7
71.4
66.7
62.0
58.8
55.6
51.9
47.1
44.0
40.2
37.2
34.5
32.8
30.8
29.0
27.4
24.7
22.5
20.6
19.0
17.6
16.5
15.0
13.8
12.4
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Notes
(1)
(2)
(3)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
72
UNIT
°C/W
°C/W
(1)
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
RJA
RJL
20
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMB10J5.0A-M3/52
SMB10J5.0A-M3/5B
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.106
0.106
52
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
5B
3200
Revision: 13-Mar-12
Document Number: 89424
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
10 000
1000
100
Measured at
Zero Bias
10
SMB10J5.0 -
SMB10J40A
VR, Measured at
Stand-Off
Voltage VWM
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SMB8J5.0C -
SMB8J40CA
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Bi-Directional
0.1
0.1 µs
10
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
100 200
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
100
75
50
25
10
1.0
0
0
25
50
75
100 125
150 175
200
0.01
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
tp - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
150
200
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
8.3 ms Single Half Sine-Wave
Uni-Directional Only
tr = 10 µs
Peak Value
IPPM
100
50
0
Half Value - IPP
IPPM
2
10/1000 µs Waveform
as defined by R.E.A.
td
10
1.0
3.0
4.0
0
2.0
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Revision: 13-Mar-12
Document Number: 89424
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 13-Mar-12
Document Number: 89424
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
SMB10J7.5AHE3/52
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor
VISHAY
SMB10J7.5AHE3/5B
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor
VISHAY
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