SMBG78C-E3/52 [VISHAY]
Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN;型号: | SMBG78C-E3/52 |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN |
文件: | 总6页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMBG5.0 thru SMBG188CA
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available inuni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-215AA (SMBG)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VWM
PPPM
5.0 V to 188 V
600 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
IFSM (uni-directional only)
TJ max.
100 A
150 °C
MECHANICAL DATA
Case: DO-215AA (SMBG)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBG10CA).
Electrical characteristics apply in both directions.
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
PPPM
VALUE
600
UNIT
W
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
IPPM
See next table
100
A
IFSM
A
TJ, TSTG
- 55 to + 150
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
Document Number: 88456
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SMBG5.0 thru SMBG188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
MAXIMUM
PEAK PULSE
SURGE
MAXIMUM
CLAMPING
VOLTAGE AT
TEST
CURRENT
STAND-OFF
VOLTAGE
DEVICE MARKING
CODE
DEVICE TYPE
MODIFIED
(1)
V
AT I
(V)
BR
T
I
V
T
WM
AT V
CURRENT
I
WM
GULL WING
PPM
(mA)
(V)
(2)
(3)
V
(V)
I
(A)
I
(µA)
C
PPM
UNI
BI
MIN.
MAX.
D
(+)SMBG5.0
(+)SMBG5.0A(5)
(+)SMBG6.0
(+)SMBG6.0A
(+)SMBG6.5
(+)SMBG6.5A
(+)SMBG7.0
(+)SMBG7.0A
(+)SMBG7.5
(+)SMBG7.5A
(+)SMBG8.0
(+)SMBG8.0A
(+)SMBG8.5
(+)SMBG8.5A
(+)SMBG9.0
(+)SMBG9.0A
(+)SMBG10
(+)SMBG10A
(+)SMBG11
(+)SMBG11A
(+)SMBG12
(+)SMBG12A
(+)SMBG13
(+)SMBG13A
(+)SMBG14
(+)SMBG14A
(+)SMBG15
(+)SMBG15A
(+)SMBG16
(+)SMBG16A
(+)SMBG17
(+)SMBG17A
(+)SMBG18
(+)SMBG18A
(+)SMBG20
(+)SMBG20A
(+)SMBG22
(+)SMBG22A
(+)SMBG24
(+)SMBG24A
(+)SMBG26
(+)SMBG26A
(+)SMBG28
(+)SMBG28A
(+)SMBG30
(+)SMBG30A
(+)SMBG33
(+)SMBG33A
(+)SMBG36
(+)SMBG36A
(+)SMBG40
(+)SMBG40A
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
KD
KE
KF
KG
AH
AK
KL
KM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
KY
KZ
BD
BE
LF
LG
BH
BK
BL
BM
LN
LM
LQ
LR
BS
BT
LU
LV
BW
BX
BY
BZ
CD
CE
MF
MG
CH
CK
CL
CM
CN
CP
CQ
CR
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
10
10
10
10
10
10
10
10
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
800
800
800
800
500
500
200
200
100
100
50
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
10.2
11.3
9.3
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
LF
LG
LH
LK
LL
LM
LN
LP
LQ
LR
LS
LT
LU
LV
LW
LX
LY
LZ
MD
ME
MF
MG
MH
MK
ML
MM
MN
MP
MQ
MR
10.3
8.4
9.3
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For technical questions within your region, please contact one of the following:
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Document Number: 88456
Revision: 22-Oct-08
SMBG5.0 thru SMBG188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
BREAKDOWN
VOLTAGE
(1)
MAXIMUM
REVERSE
LEAKAGE
MAXIMUM
PEAK PULSE
MAXIMUM
CLAMPING
VOLTAGE AT
TEST
CURRENT
STAND-OFF
VOLTAGE
DEVICE MARKING
CODE
DEVICE TYPE
MODIFIED
GULL WING
SURGE
CURRENT
(2)
V
AT I
(V)
BR
T
I
V
T
WM
AT V
I
WM
PPM
(mA)
(V)
(3)
V
(V)
I
(A)
I
(µA)
C
PPM
UNI
BI
MIN.
MAX.
D
(+)SMBG43
(+)SMBG43A
(+)SMBG45
(+)SMBG45A
(+)SMBG48
(+)SMBG48A
(+)SMBG51
(+)SMBG51A
(+)SMBG54
(+)SMBG54A
(+)SMBG58
(+)SMBG58A
(+)SMBG60
(+)SMBG60A
(+)SMBG64
(+)SMBG64A
(+)SMBG70
(+)SMBG70A
(+)SMBG75
(+)SMBG75A
(+)SMBG78
(+)SMBG78A
(+)SMBG85
(+)SMBG85A
(+)SMBG90
(+)SMBG90A
(+)SMBG100
(+)SMBG100A
(+)SMBG110
(+)SMBG110A
(+)SMBG120
(+)SMBG120A
(+)SMBG130
(+)SMBG130A
(+)SMBG150
(+)SMBG150A
(+)SMBG160
(+)SMBG160A
(+)SMBG170
(+)SMBG170A
SMBG188
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
CS
CT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.8
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
1.7
2.0
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
SMBG188A
PS
PS
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 50 A (uni-directional only)
(+)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number: 88456
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
SMBG5.0 thru SMBG188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
Typical thermal resistance, junction to ambient (1)
SYMBOL
VALUE
100
UNIT
°C/W
°C/W
RθJA
Typical thermal resistance, junction to lead
RθJL
20
Note:
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBG5.0A-E3/52
SMBG5.0A-E3/5B
SMBG5.0AHE3/52 (1)
SMBG5.0AHE3/5B (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.096
52
5B
52
5B
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.096
0.096
0.096
3200
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
100
10
1
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
50
0
Half Value - IPP
IPPM
2
10/1000 µs Waveform
as defined by R.E.A.
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
td
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
3.0
4.0
0
2.0
t - Time (ms)
td - Pulse Width (s)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
100
75
6000
1000
Measured at
Zero Bias
50
VR, Measured at
Stand-Off
Voltage VWM
100
10
25
TJ = 25 °C
f = 1.0 MHz
Uni-Directional
Bi-Directional
Vsig = 50 mVp-p
0
1
10
100
200
0
25
50
75
100 125
150 175
200
TJ - Initial Temperature (°C)
VWM - Reverse Stand-Off Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88456
Revision: 22-Oct-08
SMBG5.0 thru SMBG188CA
Vishay General Semiconductor
100
200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
10
0.001
0.01
0.1
1
10
100
1000
10
1
100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-215AA (SMBG)
Cathode Band
Mounting Pad Layout
0.165 (4.19)
0.155 (3.94)
0.130 (3.30)
0.083 (2.10)
0.077 (1.96)
0.085 (2.16)
0.060 (1.27)
0.180 (4.57)
0.160 (4.06)
0.095 (2.41)
0.008 (0.20)
0.002 (0.05)
0.016 (0.41)
0.006 (0.15)
0.075 (1.90)
0.058 (1.47)
0.038 (0.97)
0.030 (0.76)
0.015 (0.38)
0.020
(0.51) MAX.
Seating Plane
0.255 (6.48)
0.235 (5.97)
Document Number: 88456
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号:
SMBG78C-HE3/52
Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN
VISHAY
SMBG78C-HE3/5B
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN
VISHAY
SMBG78C/52
Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN
VISHAY
SMBG78C/52-E3
DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient Suppressor
VISHAY
SMBG78CA-E3/51
DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient Suppressor
VISHAY
SMBG78CA/2
Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN
VISHAY
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