SMBJ160HE3/52 [VISHAY]
Trans Voltage Suppressor Diode, 160V V(RWM), Unidirectional,;
| 型号： | SMBJ160HE3/52 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 160V V(RWM), Unidirectional, 二极管 |
| 文件： | 总5页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
Available
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
SMB (DO-214AA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VBR (bi-directional)
6.4 V to 231 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
V
BR (uni-directional)
6.4 V to 231 V
5.0 V to 188 V
600 W
VWM
PPPM
IFSM (uni-directional only)
TJ max.
100 A
MECHANICAL DATA
150 °C
Case: SMB (DO-214AA)
Polarity
Uni-directional, bi-directional
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Package
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
DEVICES FOR BI-DIRECTION APPLICATIONS
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
600
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
See next table
100
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
IFSM
A
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 24-Jan-2019
Document Number: 88392
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
MAXIMUM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
DEVICEMARKING
CODE
VOLTAGE
DEVICE TYPE
MODIFIED
“J” BEND LEAD
PEAK PULSE CLAMPING
(1)
V
BR AT IT
(V)
SURGE
CURRENT
VOLTAGEAT
IPPM
(mA)
(V)
ID (μA) (3)
I
PPM (A) (2)
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
VC (V)
9.2
UNI
KE
KG
KK
KM
KP
KR
KT
BI
KE
KG
AK
KM
AP
AR
AT
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
(+)SMBJ5.0A (5)
(+)SMBJ6.0A
(+)SMBJ6.5A
(+)SMBJ7.0A
(+)SMBJ7.5A
(+)SMBJ8.0A
(+)SMBJ8.5A
(+)SMBJ9.0A
(+)SMBJ10A
(+)SMBJ11A
(+)SMBJ12A
(+)SMBJ13A
(+)SMBJ14A
(+)SMBJ15A
(+)SMBJ16A
(+)SMBJ17A
(+)SMBJ18A
(+)SMBJ20A
(+)SMBJ22A
(+)SMBJ24A
(+)SMBJ26A
(+)SMBJ28A
(+)SMBJ30A
(+)SMBJ33A
(+)SMBJ36A
(+)SMBJ40A
(+)SMBJ43A
(+)SMBJ45A
(+)SMBJ48A
(+)SMBJ51A
(+)SMBJ54A
(+)SMBJ58A
(+)SMBJ60A
(+)SMBJ64A
(+)SMBJ70A
(+)SMBJ75A
(+)SMBJ78A
(+)SMBJ85A
(+)SMBJ90A
(+)SMBJ100A
(+)SMBJ110A
(+)SMBJ120A
(+)SMBJ130A
(+)SMBJ150A
(+)SMBJ160A
(+)SMBJ170A
SMBJ188A
10
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
800
800
500
200
100
50
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
10
KV
KX
KZ
LE
LG
LK
LM
LP
LR
AV
AX
KZ
BE
LG
BK
BM
LM
LR
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
LT
LV
BT
LV
LX
LZ
BX
BZ
CE
MG
CK
CM
CP
CR
CT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
5.3
5.0
4.8
4.4
4.1
3.7
3.4
3.1
113
121
126
137
146
162
177
193
209
243
259
275
85
90
111
111
123
100
110
120
130
150
160
170
188
122
135
133
147
144
159
2.9
2.5
2.3
2.2
167
185
178
197
189
209
209
231
2.0
328
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(+)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
For bi-directional types having VWM of 10 V and less, the ID limit is doubled
All terms and symbols are consistent with ANSI/IEEE C62.35
For the bi-directional SMBJ5.0CA, the maximum VBR is 7.25 V
VF = 3.5 V max. at IF = 50 A (uni-directional only)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 24-Jan-2019
Document Number: 88392
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
RJL
VALUE
100
20
UNIT
Typical thermal resistance, junction to ambient (1)
°C/ W
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ5.0A-E3/52
SMBJ5.0A-M3/52
SMBJ5.0A-E3/5B
SMBJ5.0A-M3/5B
SMBJ5.0AHE3_A/H (1)
SMBJ5.0AHM3_A/H (1)
SMBJ5.0AHE3_A/I (1)
SMBJ5.0AHM3_A/I(1)
0.096
0.096
0.096
0.096
52
5B
H
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
I
3200
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
150
TJ = 25 °C
Pulse Width (td)
tr = 10 µs
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
10
100
50
0
Half Value - IPP
IPPM
2
1
10/1000 µs Waveform
as defined by R.E.A.
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
td
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
3.0
4.0
0
2.0
td - Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
75
6000
1000
Measured at
Zero Bias
50
VR, Measured at Stand-Off
Voltage VWM
100
10
25
TJ = 25 °C
Uni-Directional
Bi-Directional
f = 1.0 MHz
Vsig = 50 mVP-P
0
1
10
100
200
0
25
50
75
100 125
150 175
200
TJ - Initial Temperature (°C)
VWM - Reverse Stand-Off Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 24-Jan-2019
Document Number: 88392
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
www.vishay.com
100
200
100
8.3 ms Single Half Sine-Wave
Uni-Directional Only
10
1.0
0.1
10
0.001
0.01
0.1
1.0
10
100
1000
1
10
100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
0.220 REF.
0.220 (5.59)
0.205 (5.21)
Revision: 24-Jan-2019
Document Number: 88392
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
1
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