SMBJ5.0D [VISHAY]
Surface Mount TRANSZORB Transient Voltage Suppressors;
| 型号： | SMBJ5.0D |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount TRANSZORB Transient Voltage Suppressors |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
•
3.5 %: very tight VBR tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
DO-214AA (SMBJ)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRIMARY CHARACTERISTICS
VBR (uni-directional)
BR (bi-directional)
WM (uni-directional)
6.5 V to 228 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
V
6.5 V to 21.8 V
5.0 V to 188 V
5.0 V to 18 V
600 W
V
VWM (bi-directional)
TYPICAL APPLICATIONS
PPPM
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
PD at TM = 50 °C
5.0 W
PD at TA = 25 °C
1.0 W
TJ max.
150 °C
MECHANICAL DATA
Polarity
Uni-directional, bi-directional
DO-214AA (SMBJ)
Case: DO-214AA (SMBJ)
Package
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free, RoHS-compliant, and
industrial grade
DEVICES FOR BI-DIRECTIONAL
APPLICATIONS
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
Polarity: for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
600
UNIT
W
(1)
Peak pulse power dissipation
Peak pulse current
with a 10/1000 μs waveform
with a 10/1000 μs waveform
TM = 50 °C
PPPM
(1)
IPPM
See next table
5.0
A
(2)
PD
Power dissipation
W
(3)
TA = 25 °C
PD
1.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Notes
(1)
(2)
(3)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Power dissipation mounted on infinite heatsink
Power dissipation mounted on minimum recommended pad layout
Revision: 26-Aug-15
Document Number: 87606
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK PULSE
SURGE
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
DEVICE
MARKING
CODE
TEST
CURRENT
IT
VOLTAGE
STAND-OFF
VOLTAGE
(1)
V
BR AT IT
(V)
DEVICE TYPE
V
WM (V)
CURRENT
(mA)
ID (μA) (2)
I
PPM (A) (3)
VC (V)
UNI
6AA
6AB
6AC
6AD
6AE
6AF
6AG
6AH
6AK
6AL
BI
MIN.
6.50
6.77
7.33
7.90
8.46
9.03
9.57
10.2
11.3
12.4
13.5
14.6
15.8
17.0
18.1
19.2
20.3
22.5
24.8
27.1
29.3
31.6
33.8
37.3
40.6
45.1
48.5
50.8
54.1
57.6
60.9
65.4
67.7
72.2
79.0
84.6
88.1
95.7
102
MAX.
6.97
7.27
7.87
8.48
9.08
9.69
10.3
10.9
12.1
13.3
14.5
15.7
17.0
18.2
19.4
20.6
21.8
24.2
26.6
29.1
31.5
33.9
36.3
40.0
43.6
48.4
52.1
54.5
58.1
61.8
65.4
70.2
72.7
77.5
84.8
90.8
94.4
103
(+)SMBJ5.0D
(+)SMBJ6.0D
(+)SMBJ6.5D
(+)SMBJ7.0D
(+)SMBJ7.5D
(+)SMBJ8.0D
(+)SMBJ8.5D
(+)SMBJ9.0D
(+)SMBJ10D
(+)SMBJ11D
(+)SMBJ12D
(+)SMBJ13D
(+)SMBJ14D
(+)SMBJ15D
(+)SMBJ16D
(+)SMBJ17D
(+)SMBJ18D
(+)SMBJ20D
(+)SMBJ22D
(+)SMBJ24D
(+)SMBJ26D
(+)SMBJ28D
(+)SMBJ30D
(+)SMBJ33D
(+)SMBJ36D
(+)SMBJ40D
(+)SMBJ43D
(+)SMBJ45D
(+)SMBJ48D
(+)SMBJ51D
(+)SMBJ54D
(+)SMBJ58D
(+)SMBJ60D
(+)SMBJ64D
(+)SMBJ70D
(+)SMBJ75D
(+)SMBJ78D
(+)SMBJ85D
(+)SMBJ90D
(+)SMBJ100D
(+)SMBJ110D
(+)SMBJ120D
(+)SMBJ130D
(+)SMBJ150D
(+)SMBJ160D
(+)SMBJ170D
SMBJ188D
6AA
6AB
6AC
6AD
6AE
6AF
6AG
6AH
6AK
6AL
10
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
500
500
300
150
75
65.9
58.9
54.5
50.8
47.2
44.8
42.2
39.7
35.9
33.5
30.6
28.3
26.2
25.0
23.4
22.1
20.8
18.8
17.1
15.6
14.5
13.4
12.6
11.5
10.5
9.43
8.76
8.40
7.90
7.40
7.00
6.50
6.28
5.88
5.40
5.06
4.86
4.46
4.17
3.77
3.45
3.15
2.94
2.53
2.34
2.23
2.03
9.1
10.2
11.0
11.8
12.7
13.4
14.3
15.1
16.7
17.9
19.6
21.2
22.9
24.0
25.6
27.2
28.8
32.0
35.1
38.4
41.6
44.7
47.7
52.5
57.3
63.6
68.5
71.6
76.3
81.2
85.9
92.3
95.5
102
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
35
15
5.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
6AM 6AM
6AN
6AP
6AQ
6AR
6AS
6AT
6AU
6AV
6AW
6AX
6AY
6AZ
6BA
6BB
6BC
6BD
6BE
6BF
6BG
6BH
6BK
6BL
6BM
6BN
6BP
6BQ
6BR
6BS
6BT
6BU
6BV
6BW
6BX
6BY
6BZ
6CA
6AN
6AP
6AQ
6AR
6AS
6AT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
111
119
124
135
144
159
174
190
206
239
256
270
85
90
109
113
121
100
110
120
130
150
160
170
188
124
133
135
145
146
157
170
182
-
-
-
181
194
192
206
212
228
301
Notes
•
All terms and symbols are consistent with ANSI/IEEE C62.35
Pulse test: tp 50 ms
For bi-directional types having VWM of 12 V and less, the ID limit is doubled
Surge current waveform per fig. 3 and derate per fig. 2
(1)
(2)
(3)
(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional device
Revision: 26-Aug-15
Document Number: 87606
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
125
UNIT
(1)
RJA
Typical thermal resistance, junction to ambient
(2)
RJA
100
°C/W
Typical thermal resistance, junction to mount
RJM
20
Notes
(1)
Mounted on minimum recommended pad layout
Mounted on 5.0 mm x 5.0 mm copper pad area
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBJ5.0D-M3/H
SMBJ5.0D-M3/I
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.096
0.096
H
I
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
3200
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
150
100
50
tr = 10 μs
TJ = 25 °C
pulse width (td) is de ned
as the point where the peak
current decays to 50 % of IPPM
Peak value IPPM
Half value - IPP/2
1
10/1000 μs waveform
as de ned by R.E.A.
0.2" x 0.2" (5.0 mm x 5.0 mm)
copper pad areas
td
0.1
0
10
100
1000
10 000
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
td - Pulse Width (μs)
tp - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
75
50
25
0
10 000
1000
100
10
Measured at zero bias
Measured at stand-off
voltage, VWM
TJ = 25 °C
f = 1.0 MHz
Uni-directional
Bi-directional
1
0
25
50
75
100
125
150
1
10
100 200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
VWM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 26-Aug-15
Document Number: 87606
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
6
5
4
3
2
1
0
1000
Junction to Ambient
T
A
=T
M
mounted on inifinite heatsink
Mounted on minimum
recommend pad area
100
10
1
Mounted on minimum
recommend pad layout
Mounted on 5.0 x 5.0 mm
copper pad area
0.1
0
25
50
75
100
125
150
0.001
0.1
10
1000
TA - Ambient Temperature (°C)
Fig. 5 - Power Dissipation Derating Curve
tp - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Note
Fig.1, 10 000 μs Pppm is actual test for VWM 60 V types, over 60 V types 10 000 μs Pppm is curve extensional value.
•
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMBJ)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.085 (2.159)
MAX.
0.180 (4.57)
0.160 (4.06)
0.086 (2.18)
MIN.
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 26-Aug-15
Document Number: 87606
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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