SMBJ51A-E3 [VISHAY]

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient Suppressor;


型号：	SMBJ51A-E3
厂家：	VISHAY
描述：	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient Suppressor 电视
文件：	总5页 (文件大小：89K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMBJ5.0A thru SMBJ188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

DO-214AA (SMB J-Bend)

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 188 V

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

P_PPM

600 W

100 A

_FSM(uni-directional only)

T_Jmax.

150 °C

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

TYPICAL APPLICATIONS

Base P/N-M3

commercial grade

- halogen-free, RoHS compliant, and

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

UNIT

(1)(2)

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)

Peak pulse current with a 10/1000 μs waveform

P_PPM

(1)

I_PPM

See next table

100

(2)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 14-Mar-12

Document Number: 89284

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SMBJ5.0A thru SMBJ188CA

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

BREAKDOWN

MAXIMUM

REVERSE

LEAKAGE

AT V_WM

MAXIMUM

TEST

CURRENT

I_T

STAND-OFF

VOLTAGE

V_WM

DEVICE MARKING

CODE

VOLTAGE

DEVICE TYPE

MODIFIED

“J” BEND LEAD

PEAK PULSE CLAMPING

(1)

_BRAT I_T

(V)

SURGE

VOLTAGEAT

I_PPM

CURRENT

(mA)

(V)

I_D(μA) ⁽³⁾

_PPM(A) ⁽²⁾

V_C(V)

UNI

MIN.

MAX.

(+)SMBJ5.0A ⁽⁵⁾

6.40

7.07

5.0

800

65.2

9.2

(+)SMBJ6.0A

(+)SMBJ6.5A

(+)SMBJ7.0A

(+)SMBJ7.5A

(+)SMBJ8.0A

(+)SMBJ8.5A

(+)SMBJ9.0A

(+)SMBJ10A

(+)SMBJ11A

(+)SMBJ12A

(+)SMBJ13A

(+)SMBJ14A

(+)SMBJ15A

(+)SMBJ16A

(+)SMBJ17A

(+)SMBJ18A

(+)SMBJ20A

(+)SMBJ22A

(+)SMBJ24A

(+)SMBJ26A

(+)SMBJ28A

(+)SMBJ30A

(+)SMBJ33A

(+)SMBJ36A

(+)SMBJ40A

(+)SMBJ43A

(+)SMBJ45A

(+)SMBJ48A

(+)SMBJ51A

(+)SMBJ54A

(+)SMBJ58A

(+)SMBJ60A

(+)SMBJ64A

(+)SMBJ70A

(+)SMBJ75A

(+)SMBJ78A

(+)SMBJ85A

(+)SMBJ90A

(+)SMBJ100A

(+)SMBJ110A

(+)SMBJ120A

(+)SMBJ130A

(+)SMBJ150A

(+)SMBJ160A

(+)SMBJ170A

SMBJ188A

6.67

7.22

7.78

8.33

8.89

9.44

10.0

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

36.7

40.0

44.4

47.8

50.0

53.3

56.7

60.0

64.4

66.7

71.1

77.8

83.3

86.7

94.4

100

7.37

7.98

8.60

9.21

9.83

10.4

11.1

12.3

13.5

14.7

15.9

17.2

18.5

19.7

20.9

22.1

24.5

26.9

29.5

31.9

34.4

36.8

40.6

44.2

49.1

52.8

55.3

58.9

62.7

66.3

71.2

73.7

78.6

86.0

92.1

95.8

104

6.0

6.5

7.0

7.5

8.0

8.5

9.0

800

500

200

100

58.3

53.6

50.0

46.5

44.1

41.7

39.0

35.3

33.0

30.2

27.9

25.9

24.6

23.1

21.7

20.5

18.5

16.9

15.4

14.3

13.2

12.4

11.3

10.3

9.3

8.6

8.3

7.8

7.3

6.9

6.4

6.2

5.8

5.3

5.0

4.8

4.4

4.1

3.7

3.4

3.1

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

21.5

23.2

24.4

26.0

27.6

29.2

32.4

35.5

38.9

42.1

45.4

48.4

53.3

58.1

64.5

69.4

72.7

77.4

82.4

87.1

93.6

96.8

103

1.0

5.0

1.0

113

121

126

137

146

162

177

193

209

243

259

275

111

123

135

147

159

185

197

209

111

122

133

144

167

178

189

209

100

110

120

130

150

160

170

188

2.9

2.5

2.3

2.2

231

2.0

328

Notes

(1)

(2)

(3)

(4)

(5)

(6)

Pulse test: t_p 50 ms

Surge current waveform per fig. 3 and derate per fig. 2

For bi-directional types having V_WMof 10 V and less, the I_Dlimit is doubled

All terms and symbols are consistent with ANSI/IEEE C62.35

For the bi-directional SMAJ5.0CA, the maximum V_BRis 7.25 V

V_F= 3.5 V at I_F= 25 A (uni-directional only)

(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number

E136766 for both uni-directional and bi-directional devices

Revision: 14-Mar-12

Document Number: 89284

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SMBJ5.0A thru SMBJ188CA

www.vishay.com

Vishay General Semiconductor

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

100

UNIT

°C/W

(1)

Typical thermal resistance, junction to ambient

Typical thermal resistance, junction to lead

R_JA

R_JL

Note

(1)

Mounted on minimum recommended pad layout

ORDERING INFORMATION (Example)

PREFERRED P/N

SMBJ5.0A-M3/52

SMBJ5.0A-M3/5B

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

0.096

750

7" diameter plastic tape and reel

13" diameter plastic tape and reel

3200

RATINGS AND CHARACTERISTICS CURVES

(T_A= 25 °C unless otherwise noted)

100

150

T_J= 25 °C

Pulse Width (t_d)

t_r= 10 µs

is defined as the Point

where the Peak Current

decays to 50 % of I_PPM

Peak Value

I_PPM

100

Half Value - I_PP

I_PPM

10/1000 µs Waveform

as defined by R.E.A.

0.2 x 0.2" (5.0 x 5.0 mm)

Copper Pad Areas

t_d

0.1

0.1 µs

1.0 µs

10 µs

100 µs

1.0 ms

10 ms

1.0

3.0

4.0

2.0

t_d- Pulse Width (s)

t - Time (ms)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 3 - Pulse Waveform

100

6000

1000

Measured at

Zero Bias

V_R, Measured at Stand-Off

Voltage V_WM

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_P-P

Uni-Directional

Bi-Directional

100

200

100 125

150 175

200

T_J- Initial Temperature (°C)

V_WM- Reverse Stand-Off Voltage (V)

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 4 - Typical Junction Capacitance

Revision: 14-Mar-12

Document Number: 89284

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SMBJ5.0A thru SMBJ188CA

www.vishay.com

Vishay General Semiconductor

100

200

8.3 ms Single Half Sine-Wave

Uni-Directional Only

100

1.0

0.1

0.001

0.01

0.1

1.0

100

1000

100

t_p- Pulse Duration (s)

Number of Cycles at 60 Hz

Fig. 5 - Typical Transient Thermal Impedance

Fig. 6 - Maximum Non-Repetitive Forward Surge Current

Uni-Directional Only

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AA (SMB-J-Bend)

Mounting Pad Layout

Cathode Band

0.085 (2.159)

MAX.

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

0.086 (2.18)

MIN.

0.180 (4.57)

0.160 (4.06)

0.060 (1.52)

MIN.

0.012 (0.305)

0.006 (0.152)

0.220 REF.

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

0.220 (5.59)

0.205 (5.21)

Revision: 14-Mar-12

Document Number: 89284

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000

SMBJ51A-E3 [VISHAY]

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