SMCJ188AHM3_A/I [VISHAY]
Trans Voltage Suppressor Diode,;型号: | SMCJ188AHM3_A/I |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 局域网 光电二极管 |
文件: | 总5页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
Available
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMC (DO-214AB)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR uni-directional
6.40 V to 231 V
TYPICAL APPLICATIONS
VBR bi-directional
6.40 V to 231 V
5.0 V to 188 V
1500 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
VWM
PPPM
PD
6.5 W
IFSM (uni-directional only)
200 A
MECHANICAL DATA
TJ max.
150 °C
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Polarity
Uni-directional, bi-directional
SMC (DO-214AB)
Package
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
DEVICES FOR BI-DIRECTION APPLICATIONS
(“_X” denotes revision code e.g. A, B, ...)
For bi-directional devices use CA suffix (e.g. SMCJ188CA).
Electrical characteristics apply in both directions.
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
1500
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)
Peak pulse current with a 10/1000 μs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Power dissipation on infinite heatsink, TA = 50 °C
Operating junction and storage temperature range
IPPM
See next table
200
A
(2)
IFSM
A
PD
6.5
W
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
(2)
Revision: 24-Jan-2019
Document Number: 88394
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
MAXIMUM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
DEVICEMARKING
CODE
VOLTAGE
DEVICE TYPE
MODIFIED
PEAK PULSE CLAMPING
(1)
V
BR AT IT
(V)
SURGE
VOLTAGEAT
IPPM
“J” BEND LEAD
CURRENT
(mA)
(V)
ID (μA) (3)
I
PPM (A) (2)
163.0
145.6
133.9
125.0
116.3
110.3
104.2
97.4
88.2
82.4
75.4
69.8
64.7
61.5
57.7
54.3
51.4
46.3
42.3
38.6
35.6
33.0
31.0
28.1
25.8
23.3
21.6
20.6
19.4
18.2
17.2
16.0
15.5
14.6
13.3
12.4
11.9
10.9
10.3
9.3
VC (V)
UNI
GDE
GDG
GDK
GDM
GDP
GDR
GDT
GDV
GDX
GDZ
GEE
GEG
GEK
GEM
GEP
GER
GET
GEV
GEX
GEZ
GFE
GFG
GFK
GFM
GFP
GFR
GFT
GFV
GFX
GFZ
GGE
GGG
GGK
GGM
GGP
GGR
GGT
GGV
GGX
GGZ
GHE
GHG
GHK
GHM
GHP
GHR
GHS
BI
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
(+)SMCJ5.0A (5)
(+)SMCJ6.0A
(+)SMCJ6.5A
(+)SMCJ7.0A
(+)SMCJ7.5A
(+)SMCJ8.0A
(+)SMCJ8.5A
(+)SMCJ9.0A
(+)SMCJ10A
(+)SMCJ11A
(+)SMCJ12A
(+)SMCJ13A
(+)SMCJ14A
(+)SMCJ15A
(+)SMCJ16A
(+)SMCJ17A
(+)SMCJ18A
(+)SMCJ20A
(+)SMCJ22A
(+)SMCJ24A
(+)SMCJ26A
(+)SMCJ28A
(+)SMCJ30A
(+)SMCJ33A
(+)SMCJ36A
(+)SMCJ40A
(+)SMCJ43A
(+)SMCJ45A
(+)SMCJ48A
(+)SMCJ51A
(+)SMCJ54A
(+)SMCJ58A
(+)SMCJ60A
(+)SMCJ64A
(+)SMCJ70A
(+)SMCJ75A
(+)SMCJ78A
(+)SMCJ85A
(+)SMCJ90A
(+)SMCJ100A
(+)SMCJ110A
(+)SMCJ120A
(+)SMCJ130A
(+)SMCJ150A
(+)SMCJ160A
(+)SMCJ170A
SMCJ188A
GDE
GDG
BDK
GDM
BDP
BDR
BDT
BDV
BDX
GDZ
BEE
GEG
BEK
BEM
GEP
GER
BET
BEV
BEX
BEZ
BFE
10
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
1000
1000
500
200
100
50
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
BFG
BFK
BFM
BFP
BFR
BFT
GFV
GFX
GFZ
GGE
GGG
GGK
GGM
GGP
GGR
GGT
GGV
GGX
GGZ
GHE
GHG
GHK
GHM
GHP
GHR
GHS
113
121
126
137
146
162
177
193
209
243
259
275
85
90
111
123
135
147
159
185
197
209
111
122
133
144
167
178
189
209
100
110
120
130
150
160
170
188
8.5
7.8
7.2
6.2
5.8
5.5
4.6
231
328
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(+)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
For bi-directional types having VWM of 10 V and less, the ID limit is doubled
All terms and symbols are consistent with ANSI/IEEE C62.35
For the bi-directional SMCJ5.0CA, the maximum VBR is 7.25 V
VF = 3.5 V at IF = 100 A (uni-directional only)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 24-Jan-2019
Document Number: 88394
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
75
UNIT
Typical thermal resistance, junction to ambient air (1)
RJA
°C/ W
Typical thermal resistance, junction to lead
RJL
15
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMCJ5.0A-E3/57T
SMCJ5.0A-M3/57T
SMCJ5.0A-E3/9AT
SMCJ5.0A-M3/9AT
SMCJ5.0AHE3_A/H (1)
SMCJ5.0AHM3_A/H (1)
SMCJ5.0AHE3_A/I (1)
SMCJ5.0AHM3_A/I (1)
0.211
0.211
0.211
0.211
57T
9AT
H
850
3500
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
I
3500
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10
1
100
75
50
25
0.31 x 0.31" (8.0 x 8.0 mm)
Copper pad areas
0.1
0.1 µs
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
25
50
75
100 125
150 175
200
td - Pulse Width (s)
TJ - Initial Temperature (°C)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 24-Jan-2019
Document Number: 88394
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
100
150
TJ = 25 °C
Pulse width (td)
tr = 10 µs
is defined as the point
where the peak current
decays to 50 % of IPPM
Peak value
IPPM
10
1.0
0.1
100
50
0
Half value -
IPPM
IPP
2
10/1000 µs waveform
as defined by R.E.A.
td
0.001
0.01
0.1
1
10
100
1000
1.0
3.0
4.0
0
2.0
tp - Pulse Duration (s)
t - Time (ms)
Fig. 3 - Pulse Waveform
Fig. 5 - Typical Transient Thermal Impedance
20 000
10 000
200
100
Measured at
zero bias
1000
100
10
VR, measured at
Stand-off voltage VWM
Uni-directional
Bi-directional
TJ = 25 °C
f = 1.0 MHz
TJ = TJ max.
8.3 ms single half sine-wave
Vsig = 50 mVp-p
10
1
100
1
10
100
400
10
VWM - Reverse Stand-Off Voltage (V)
Number of Cycles at 60 Hz
Fig. 4 - Typical Junction Capacitance Uni-Directional
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Use On
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Mounting Pad Layout
Cathode Band
0.185 (4.69)
MAX.
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.320 REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 24-Jan-2019
Document Number: 88394
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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VISHAY
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