SMF20A [VISHAY]

Surface Mount ESD Protection Diodes; 表面贴装ESD保护二极管


型号：	SMF20A
厂家：	VISHAY
描述：	Surface Mount ESD Protection Diodes 表面贴装ESD保护二极管瞬态抑制器二极管光电二极管局域网
文件：	总6页 (文件大小：213K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMF5V0A to SMF51A

Vishay Semiconductors

Surface Mount ESD Protection Diodes

Features

• For surface mounted applications

• Low-profile package

• Optimized for LAN protection applications

• Ideal for ESD protection of data lines in

accordance with IEC 61000-4-2 (IEC801-2)

17249

• Ideal for EFT protection of data lines in

accordance with IEC 61000-4-4 (IEC801-4)

• IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)

• Low incremental surge resistance, excellent

clamping capability

• 200 W peak pulse power capability with a

Mechanical Data

Case: JEDEC DO-219AB (SMF ) Plastic case

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

Polarity:The band denotes the cathode, which is

positive with respect to the anode under normal

TVS operation

10/1000 µs waveform, repetition rate

(duty cycle): 0.01 %

• Very fast response time

• High temperature soldering guaranteed:

260 °C/ 10 seconds at terminals

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Mounting Position: Any

Weight: approx. 15 mg

Packaging Codes/Options:

GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box

GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box

Absolute Maximum Ratings

Ratings at 25 °C, ambient temperature unless otherwise specified

Parameter

Test condition

10/1000 µs waveform¹⁾

8/20 µs waveform¹⁾

Symbol

P_PPM

Value

200

Unit

Peak pulse power dissipation

P_PPM

I_PPM

1000

10/1000 µs waveform¹⁾

Peak pulse current

Table

Peak forward surge current

8.3 ms single half sine-wave

I_FSM

¹⁾Non-repetitive current pulse and derated above T_A= 25 °C

Thermal Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

Parameter

Thermal resistance²⁾

Test condition

Symbol

R_thJA

Value

180

Unit

K/W

Operation junction and storage

temperature range

_stg, T_J

- 55 to + 150

°C

2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( ≥ 40 µm thick)

Document Number 85811

Rev. 2.0, 29-Apr-05

www.vishay.com

SMF5V0A to SMF51A

Vishay Semiconductors

Electrical Characteristics

Ratings at 25 °C ambient temperature unless otherwise specified. V_F= 3.5 V at I_F= 12 A (uni-directional only)

Partnumber

Marking

Code

UNI

Breakdown Test Current

Voltage¹⁾

Stand-off

Voltage

Maximum

Reverse

Leakage

Maximum

Peak Pulse

Surge

Maximum

Clamping

Voltage

Junction

Capacitance

Current ^2,3)

V_(BR)

@ I_T

V_WM

@ V_WM

I_D

I_PPM

@ I_PPM

V_C

C_j@

V_R= 0 V,

f = 1 MHz

µA

min

typ

SMF5V0A

SMF6V0A

SMF6V5A

SMF7V0A

SMF7V5A

SMF8V0A

SMF8V5A

SMF9V0A

SMF10A

SMF11A

SMF12A

SMF13A

SMF14A

SMF15A

SMF16A

SMF17A

SMF18A

SMF20A

SMF22A

SMF24A

SMF26A

SMF28A

SMF30A

SMF33A

SMF36A

SMF40A

SMF43A

SMF45A

SMF48A

SMF51A

6.40

6.67

7.22

7.78

8.33

8.89

9.44

10.0

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

36.7

40.0

44.4

47.8

50.0

53.3

56.7

5.0

6.0

6.5

7.0

7.5

8.0

8.5

9.0

400

250

100

21.7

19.4

17.9

16.7

15.5

14.7

13.9

13.5

11.8

11.0

10.1

9.3

9.2

1030

1010

850

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

21.5

23.2

24.4

26.0

27.6

29.2

32.4

35.5

38.9

42.1

45.4

48.4

53.3

58.1

64.5

69.4

72.7

77.4

82.4

750

1.0

730

670

660

5.0

2.5

1.0

620

570

460

440

420

8.6

370

8.2

350

7.7

340

7.2

310

5.8

305

6.2

207

5.6

265

5.1

240

4.8

225

4.4

210

4.1

205

3.8

190

3.4

180

3.1

165

2.9

160

2.8

155

2.6

150

2.4

145

¹⁾Pulse test t_p≤ 5.0 ms

²⁾Surge current waveform 10/1000 µs

³⁾All terms and symbols are consistent with ANSI/IEEE C62.35

www.vishay.com

Document Number 85811

Rev. 2.0, 29-Apr-05

SMF5V0A to SMF51A

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Non-repetitive Pulse

Waveform shown in Fig. 3

T_A= 25 °C

0.1

0.1µs

1.0µs

10µs

100µs

1.0ms

10ms

17250

t_d

- Pulse Width (sec.)

Figure 1. Peak Pulse Power Rating

100

T_A

150

175

200

100

125

17251

Ambient Temperature (°C)

Figure 2. Pulse Derating Curve

150

T_J= 25 °C

Pulse Width (td)

tr = 10 µs

is defined as the point

Peak Value

I_PPM

where the peak current

decays to 50% of I_PPM

100

Half Value - IPP

I_PPM

10/1000 sec. Waveform

as defined by R.E.A.

1.0

3.0

4.0

2.0

17252

t - Time (ms)

Figure 3. Pulse Waveform

Document Number 85811

Rev. 2.0, 29-Apr-05

www.vishay.com

SMF5V0A to SMF51A

Vishay Semiconductors

Package Dimensions in mm (Inches)

0.85 (0.033)

0.35 (0.014)

3.9 (0.152)

3.5 (0.137)

0.16 (0.006)

0.99 (0.039)

0.97 (0.038)

Cathode Band

Top View

Detail

enlarged

1.9 (0.074)

1.7 (0.066)

1.2 (0.047)

0.8 (0.031)

0.10 max

2.9 (0.113)

2.7 (0.105)

ISO Method E

Mounting Pad Layout

1.6 (0.062)

1.3 (0.051)

1.4 (0.055)

17247

www.vishay.com

Document Number 85811

Rev. 2.0, 29-Apr-05

SMF5V0A to SMF51A

Vishay Semiconductors

Blistertape for SMF

18513

Document Number 85811

Rev. 2.0, 29-Apr-05

www.vishay.com

SMF5V0A to SMF51A

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

Document Number 85811

Rev. 2.0, 29-Apr-05

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