SMF51A/G1 [VISHAY]
Trans Voltage Suppressor Diode, 51V V(RWM), Unidirectional,;
| 型号： | SMF51A/G1 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 51V V(RWM), Unidirectional, 二极管 |
| 文件： | 总5页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMF5.0A to SMF51A
VISHAY
Vishay Semiconductors
Surface Mount ESD Protection Diodes
\
Features
• For surface mounted applications
• Low-profile package
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns)
IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20 µs)
• Low incremental surge resistance, excellent
clamping capability
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
• 200 W peak pulse power capability with a
10/1000 µs waveform, repetition rate
(duty cycle): 0.01 %
Polarity:The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
• Very fast response time
Mounting Position: Any
• High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
Weight: approx. 0.00035 oz, 0.01g
Packaging Codes/Options:
G1/10 K per 13 " reel (8 mm tape), 50 K/box
G2/3 K per 7 " reel (8 mm tape), 30 K/box
Mechanical Data
Case: JEDEC DO-219-AB (SMF) Plastic case
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Symbol
PPPM
Value
200
Unit
W
10/1000 µs waveform1)
8/20 µs waveform1)
10/1000 µs waveform1)
Peak pulse power dissipation
PPPM
IPPM
1000
W
A
Peak pulse current
next
Table
Peak forward surge current
8.3 ms single half sine-wave
IFSM
20
A
1) Non-repetitive current pulse and derated above TA = 25 °C
Maximum Thermal Resistance
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Symbol
RthJA
Value
Unit
K/W
Thermal resistance2)
180
Operation junction and storage
temperature range
Tstg, TJ
- 55 to + 150
°C
2) Mounted on epoxy substrate with 3 x 3 mm, cu pads (≥ 40 µm thick)
Document Number 85811
Rev. 3, 21-Feb-03
www.vishay.com
1
SMF5.0A to SMF51A
Vishay Semiconductors
VISHAY
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. VF = 3.5 V at IF = 12 A (uni-directional only)
Partnumber
Marking
Code
UNI
Marking
Code
BI
Breakdown Test Current
Voltage1)
Stand-off
Voltage
Maximum
Reverse
Leakage
Maximum
Peak Pulse
Surge
Maximum
Clamping
Voltage
Current 2,3)
V(BR)
@ IT
mA
VWM
V
@ VWM
ID
IPPM
@ IPPM
VC
V
µA
A
V
min
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A
SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
AE
AG
AK
AM
AP
AR
AT
WE
WG
WK
WM
WP
WR
WT
WV
WX
WZ
XE
XG
XK
XM
XP
XR
XT
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
400
400
250
100
50
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.5
11.8
11.0
10.1
9.3
9.2
10
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
25
10
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
5.0
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
8.6
8.2
7.7
7.2
5.8
XV
XX
XZ
6.2
5.6
5.1
YE
YG
YK
YM
YP
YR
YT
4.8
4.4
4.1
3.8
3.4
3.1
2.9
YV
YX
YZ
2.8
2.6
2.4
1) Pulse test tp ≤ 5.0 ms
2) Surge current waveform 10/1000 µs
3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 85811
Rev. 3, 21-Feb-03
SMF5.0A to SMF51A
VISHAY
Vishay Semiconductors
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
10
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
1
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
17250
td
- Pulse Width (sec.)
Figure 1. Peak Pulse Power Rating
100
75
50
25
0
25
50
TA
75
150
175
200
0
100
125
17251
-
Ambient Temperature (°C)
Figure 2. Pulse Derating Curve
150
TJ = 25 °C
tr = 10
s
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
Peak Value
IPPM
100
50
0
Half Value - IPP
IPPM
2
10/1000 sec. Waveform
as defined by R.E.A.
td
1.0
3.0
4.0
0
2.0
17252
t - Time (ms)
Figure 3. Pulse Waveform
Document Number 85811
Rev. 3, 21-Feb-03
www.vishay.com
3
SMF5.0A to SMF51A
Vishay Semiconductors
VISHAY
Package Dimensions in mm
Cathode Band
T op View
1.8 0.1
1.0 0.2
2.8
0.1
5
0.05 - 0.30
0.98 0.1
5
Z
0.60 0.25
Detail
Z
enlarged
0.00 - 0.10
3.7 0.2
17247
Mounting Pad Layout
1.2
1.6
1.2
17248
www.vishay.com
4
Document Number 85811
Rev. 3, 21-Feb-03
SMF5.0A to SMF51A
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85811
Rev. 3, 21-Feb-03
www.vishay.com
5
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