SQ1431EH-T1_GE3 [VISHAY]
Small Signal Field-Effect Transistor;
| 型号： | SQ1431EH-T1_GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor |
| 文件： | 总12页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ1912EH
Vishay Siliconix
www.vishay.com
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
SOT-363
SC-70 Dual (6 leads)
S2
4
• AEC-Q101 qualified
G2
5
• 100 % Rg tested
D1
6
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
D2
2
G1
1
D
D
2
S1
1
Top View
Marking Code: 9H
PRODUCT SUMMARY
VDS (V)
G
G
2
1
20
R
R
R
DS(on) () at VGS = 4.5 V
DS(on) () at VGS = 2.5 V
DS(on) () at VGS = 1.8 V
0.280
0.360
0.450
0.8
S
S
2
1
ID (A)
Configuration
Package
Dual
SC-70
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
20
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
8
TC = 25 °C
0.8
0.8
0.8
3
Continuous drain current a
ID
T
C = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
IS
A
IDM
IAS
EAS
Single pulse avalanche current
Single pulse avalanche energy
3.8
7.2
1.5
0.5
L = 0.1 mH
mJ
W
TC = 25 °C
TC = 125 °C
Maximum power dissipation b
PD
Operating junction and storage temperature range
TJ, Tstg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
220
UNIT
Junction-to-ambient
PCB mount c
°C/W
Junction-to-foot (drain)
RthJF
100
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = 250 μA
20
-
-
V
VDS = VGS, ID = 250 μA
0.45
0.6
1.5
VDS = 0 V, VGS
=
8 V
-
-
-
100
1
nA
μA
A
VGS = 0 V
VDS = 20 V
VDS = 20 V, TJ = 125 °C
VDS = 20 V, TJ = 175 °C
VDS 5 V
-
Zero gate voltage drain current
On-state drain current a
IDSS
V
GS = 0 V
GS = 0 V
-
-
50
V
-
-
-
150
-
ID(on)
VGS = 4.5 V
VGS = 4.5 V
1.5
-
ID = 1.2 A
0.200
-
0.280
0.423
0.510
0.360
0.450
-
V
V
V
V
GS = 4.5 V
GS = 4.5 V
GS = 2.5 V
GS = 1.8 V
ID = 1.2 A, TJ = 125 °C
ID = 1.2 A, TJ = 175°C
ID = 1 A
-
Drain-source on-state resistance a
RDS(on)
-
-
S
-
0.261
0.320
2.6
ID = 0.2 A
-
Forward transconductance b
Dynamic b
gfs
VDS = 10 V, ID = 0.5 A
-
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge c
Gate-source charge c
Gate-drain charge c
Gate resistance d
Turn-on delay time c
Rise time c
Ciss
Coss
Crss
Qg
-
-
49
22
75
32
12
1.15
-
V
GS = 0 V
VDS = 10 V, f = 1 MHz
pF
-
8
-
0.76
0.13
0.33
11.1
3
Qgs
Qgd
Rg
VGS = 4.5 V
VDS = 10 V, ID = 1.2 A
f = 1 MHz
-
nC
-
-
5.5
-
22.2
5
td(on)
tr
td(off)
tf
-
21
31
29
25
VDD = 10 V, RL = 20
ID 0.5 A, VGEN = 4.5 V, Rg = 1
ns
Turn-off delay time c
Fall time c
-
19
-
17
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
-
-
-
3
A
V
Forward voltage
VSD
IF = 0.5 A, VGS = 0
0.8
1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.6
1.2
0.8
0.4
0.0
VGS = 5 V thru 1.5 V
TC = 25 °C
VGS = 1 V
TC = 125 °C
VGS = 0.5 V
TC = - 55 °C
1.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
1.0
20
0.0
0.5
1.0
2.0
2.5
2.0
0.8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
4
3
2
1
0
0.5
0.4
0.3
0.2
0.1
0.0
TC = - 55 °C
TC = 25 °C
VGS = 1.8 V
VGS = 2.5 V
TC = 125 °C
VGS = 4.5 V
0.2
0.4
0.6
0.8
0.0
0.4
0.8
1.2
1.6
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
5
4
3
2
1
0
80
60
40
20
0
ID = 1.2 A
VDS = 10 V
Ciss
Coss
Crss
0.0
0.2
0.4
0.6
5
10
15
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
10
ID = 1.2 A
1
VGS = 2.5 V
TJ = 150 °C
0.1
VGS = 4.5 V
TJ = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
1.0
0.8
0.6
0.4
0.2
0.0
0.5
0.3
0.1
ID = 5 mA
- 0.1
- 0.3
- 0.5
TJ = 150 °C
ID = 250 μA
TJ = 25 °C
- 50 - 25
0
25
50
75 100 125 150 175
0
1
2
3
4
5
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
100
10
26
25
24
23
22
21
20
ID = 10 mA
IDM Limited
Limited by RDS(on)
*
1
10 ms
100 ms
1 s, 10 s, DC
0.1
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.1
1
10
100
- 50 - 25
0
25
50
75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
0.02
2. Per Unit Base = R
= 220 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67394.
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SC-70
Ordering codes for the SQ rugged series power MOSFETs in the SC-70 package:
DATASHEET PART NUMBER
SQ1421EDH
SQ1431EH
OLD ORDERING CODE a
NEW ORDERING CODE
SQ1421EDH-T1_GE3
SQ1431EH-T1_GE3
SQ1440EH-T1_GE3
SQ1470AEH-T1_GE3
SQ1539EH-T1_GE3
SQ1563AEH-T1_GE3
SQ1902AEL-T1_GE3
SQ1912AEEH-T1_GE3
SQ1912EH-T1_GE3
-
SQ1431EH-T1-GE3
SQ1440EH
-
-
-
-
-
-
-
SQ1470AEH
SQ1539EH
SQ1563AEH
SQ1902AEL
SQ1912AEEH
SQ1912EH
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 01-Jul-16
Document Number: 65839
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom Max
6
1
5
2
4
3
0.90
–
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
A1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7_Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7_Nom
D
e
1
1.80
E
-A-
D
1.15
E1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
VISHAY SILICONIX
www.vishay.com
Power MOSFETs
Application Note AN917
Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance 175 °C Rated Part
INTRODUCTION
87 (mil)
The new dual 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
26 (mil)
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
6
5
4
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout,
and thermal performance for the dual-channel version.
96 (mil)
71 (mil)
48 (mil)
61 (mil)
23 (mil)
PIN-OUT
1
2
3
Figure
1 shows the pin-out description and pin 1
identification for the dual-channel SC-70 device in the 6-pin
configuration. Both n-and p-channel devices are available in
this package – the drawing example below illustrates the
p-channel device.
0.0 (mil)
8 (mil)
26 (mil)
SOT-363
SC-70 (6-LEADS)
16 (mil)
Fig. 2 SC-70 (6 leads) Dual
S
G
D
1
2
3
6
5
D
1
1
1
2
EVALUATION BOARD FOR THE DUAL-CHANNEL
SC70-6
G
2
2
The 6-pin SC-70 evaluation board (EVB) shown in figure 3
measures 0.6 in. by 0.5 in. The copper pad traces are the
same as described in the previous section, Basic Pad
Patterns. The board allows for examination from the outer
pins to the 6-pin DIP connections, permitting test sockets to
be used in evaluation testing.
4
S
Top View
Fig. 1
For package dimensions see outline drawing SC-70
(6-Leads) (www.vishay.com/doc?71154)
The thermal performance of the dual 6-pin SC-70 has been
measured on the EVB, comparing both the copper and Alloy
42 leadframes. This test was then repeated using the
1-inch2 PCB with dual-side copper coating.
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (www.vishay.com/doc?72286) for the SC-70
6-pin basic pad layout and dimensions. This pad pattern is
sufficient for the low-power applications for which this
package is intended. Increasing the drain pad pattern
(figure 2) yields a reduction in thermal resistance and is a
preferred footprint.
A helpful way of displaying the thermal performance of the
6-pin SC-70 dual copper leadframe is to compare it to the
traditional Alloy 42 version.
Revision: 15-Apr-13
Document Number: 75130
1
For technical questions, contact: powermosfettechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note AN917
www.vishay.com
Vishay Siliconix
Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance 175 °C Rated Part
Front of Board SC70-6
Back of Board SC70-6
S1
D1
G2
S2
G1
D2
vishay.com
SC70−6 DUAL
Fig. 3
THERMAL PERFORMANCE
COOPER LEADFRAME
Junction-to-Foot Thermal Resistance
(the Package Performance)
ROOM AMBIENT 25 °C
ELEVATED AMBIENT 60 °C
TJ(max.) - TA
TJ(max.) - TA
Thermal performance for the dual SC-70 6-pin package is
measured as junction-to-foot thermal resistance, in which
the “foot” is the drain lead of the device as it connects with
the body. The junction-to-foot thermal resistance for this
device is typically 80 °C/W, with a maximum thermal
resistance of approximately 100 °C/W. This data compares
favorably with another compact, dual-channel package
- the dual TSOP-6 - which features a typical thermal
resistance of 75 °C/W and a maximum of 90 °C/W.
PD
PD
R
R
JA
JA
175 °C - 25 °C
PD
175 °C - 60 °C
224 °C/W
PD
PD
224 °C/W
513 mW
PD
669 mW
Although they are intended for low-power applications,
devices in the 6-pin SC-70 dual-channel configuration will
handle power dissipation in excess of 0.5 W.
Power Dissipation for 175 °C Rated Part
The typical RJA for the dual-channel 6-pin SC-70 with a
copper leadframe is 224 °C/W steady-state, compared to
413 °C/W for the Alloy 42 version. All figures are based on
the 1-inch2 FR4 test board. The following example shows
how the thermal resistance impacts power dissipation
for the dual 6-pin SC-70 package at varying ambient
temperatures.
TESTING
To further aid the comparison of copper and Alloy 42
leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin
SC-70 thermal performance on two different board sizes
and pad patterns. The measured steady-state values of
RJA for the dual 6-pin SC-70 with varying leadframes are as
follows:
Alloy 42 Leadframe
ALLOY 42 LEADFRAME
LITTLE FOOT 6-PIN SC-70
ALLOY 42
COPPER
ROOM AMBIENT 25 °C
ELEVATED AMBIENT 60 °C
1) Minimum recommended pad
pattern on the EVB board (see fig. 3).
2) Industry standard 1-inch2 PCB
with maximum copper both sides.
518 °C/W
344 °C/W
TJ(max.) - TA
TJ(max.) - TA
PD
PD
R
R
JA
JA
413 °C/W
224 °C/W
175 °C - 25 °C
PD
175 °C - 60 °C
PD
413 °C/W
413 °C/W
The results indicate that designers can reduce thermal
resistance (JA) by 34 % simply by using the copper
leadframe device as opposed to the Alloy 42 version. In this
example, a 174 °C/W reduction was achieved without an
increase in board area. If an increase in board size is
feasible, a further 120 °C/W reduction can be obtained by
utilizing a 1-inch2. PCB area.
PD
278 mW
PD
363 mW
Revision: 15-Apr-13
Document Number: 75130
2
For technical questions, contact: powermosfettechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note AN917
www.vishay.com
Vishay Siliconix
Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance 175 °C Rated Part
The dual copper leadframe versions have the following
suffix:
Dual:
Sx19xxEDH or Sx19xxEEH
Sx15xxEDH or Sx15xxEEH
Compl.:
500
400
300
500
400
300
Alloy
42
Alloy 42
200
100
200
100
Copper
Copper
10
0
0
-5
-4
-3
-2
-1
-5
-4
-3
-2
-1
10
10
10
10
10
1
10
100
1000
10
10
10
10
10
1
100
1000
Time (s)
Time (s)
Fig. 4 Dual SC70-6 Thermal Performance on EVB
Fig. 5 Dual SC70-6 Comparison on 1-inch2 PCB
Revision: 15-Apr-13
Document Number: 75130
3
For technical questions, contact: powermosfettechsupport@vishay.com
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
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