SQJ479EP-T1_GE3 [VISHAY]
MOSFET P-CH 80V 32A POWERPAKSO-8;
| 型号： | SQJ479EP-T1_GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET P-CH 80V 32A POWERPAKSO-8 |
| 文件： | 总10页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQJ479EP
Vishay Siliconix
www.vishay.com
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
PRODUCT SUMMARY
VDS (V)
-80
0.033
• AEC-Q101 qualified
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
0.044
• 100 % Rg and UIS tested
ID (A)
-32
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Configuration
Package
Single
PowerPAK SO-8L
PowerPAK® SO-8L Single
S
D
G
1
S
2
S
3
S
4
D
1
G
P-Channel MOSFET
Top View
Bottom View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
LIMIT
-80
UNIT
VDS
V
VGS
20
T
C = 25 °C
-32
Continuous Drain Current
ID
TC = 125 °C
-18
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
IS
-60
A
IDM
IAS
EAS
-100
-40
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
80
mJ
W
TC = 25 °C
68
Maximum Power Dissipation b
PD
TC = 125 °C
22
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
SYMBOL
RthJA
LIMIT
68
UNIT
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
2.2
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1071-Rev. A, 30-May-16
Document Number: 75129
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ479EP
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = -250 μA
-80
-
-
V
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS
=
20 V
-
-
-
-
-
-
-
100
-1
nA
μA
A
VGS = 0 V
VDS = -80 V
VDS = -80 V, TJ = 125 °C
VDS = -80 V, TJ = 175 °C
VDS -5 V
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
VGS = 0 V
VGS = 0 V
-
-50
-150
-
-
ID(on)
VGS = -10 V
-30
-
V
GS = -10 V
GS = -10 V
ID = -10 A
0.0275 0.0330
V
ID = -10 A, TJ = 125 °C
ID = -10 A, TJ = 175 °C
ID = -5 A
-
-
-
0.0544
0.0670
Drain-Source On-State Resistance a
RDS(on)
VGS = -10 V
VGS = -4.5 V
-
-
0.0360 0.0440
Forward Transconductance b
Dynamic b
gfs
VDS = -15 V, ID = -10 A
-
25
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Ciss
Coss
Crss
Qg
-
3290
320
215
90
4500
450
300
150
-
VGS = 0 V
VDS = -25 V, f = 1 MHz
-
pF
-
-
Qgs
Qgd
Rg
VGS = -10 V
VDS = -40 V, ID = -10 A
f = 1 MHz
-
11
nC
-
24
-
0.50
1.16
15
1.80
25
td(on)
tr
td(off)
tf
-
-
-
-
5
10
VDD = -40 V, RL = 10
ID -4 A, VGEN = -10 V, Rg = 1
ns
50
80
6
10
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
-
-
-
-100
-1.2
A
V
Forward Voltage
VSD
IF = -10 A, VGS = 0
-0.85
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1071-Rev. A, 30-May-16
Document Number: 75129
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ479EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
80
10000
1000
100
100
80
60
40
20
0
10000
1000
100
VGS = 10 V thru 6 V
64
48
32
16
0
VGS = 5 V
TC = 25 °C
VGS = 4 V
TC = 125 °C
2
VGS = 3 V
TC = -55 °C
10
10
0
0
0
4
6
8
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
50
40
30
20
10
0
10000
1000
100
0.10
0.08
0.06
0.04
0.02
0.00
10000
1000
100
TC = -55 °C
TC = 25 °C
VGS = 4.5 V
TC = 125 °C
VGS = 10 V
10
10
0
5
10
15
20
25
16
32
48
64
80
ID - Drain Current (A)
2nd line
ID - Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
6000
4800
3600
2400
1200
0
10000
1000
100
10
8
10000
1000
100
ID = 10 A
DS = 40 V
V
6
Ciss
4
Crss
2
Coss
10
0
10
0
20
40
60
80
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S16-1071-Rev. A, 30-May-16
Document Number: 75129
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ479EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
2.5
2.1
1.7
1.3
0.9
0.5
10000
1000
100
100
10
10000
ID = 10 A
VGS = 10 V
TJ = 150 °C
1000
1
TJ = 25 °C
VGS = 4.5 V
0.1
100
10
0.01
0.001
10
-50 -25
0
25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.15
0.12
0.09
0.06
0.03
0.00
10000
1000
100
1.0
0.7
10000
1000
100
ID = 250 μA
0.4
ID = 5 mA
TJ = 150 °C
TJ = 25 °C
0.1
-0.2
-0.5
10
10
0
2
4
6
8
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
-75
10000
1000
100
ID = 1 mA
-80
-85
-90
-95
-100
10
-50 -25
0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain-Source Breakdown vs. Junction Temperature
S16-1071-Rev. A, 30-May-16
Document Number: 75129
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ479EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
Axis Title
1000
10000
1000
IDM limited
100
10
1
100 μs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100
(1)
Limited by RDS(on)
0.1
TC = 25 °C
Single pulse
BVDSS limited
10
0.01
10
1000
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
> minimum VGS at which RDS(on) is specified
(1)
V
GS
Safe Operating Area
2
1
Duty cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty cycle, D =
2. Per unit base = R
= 68 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single pulse
4. Surface mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-1071-Rev. A, 30-May-16
Document Number: 75129
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ479EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
2
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75129.
S16-1071-Rev. A, 30-May-16
Document Number: 75129
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
Revision: 05-Aug-2019
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MILLIMETERS
NOM.
1.07
-
INCHES
DIM.
MIN.
1.00
0.00
0.33
0.44
4.80
MAX.
1.14
0.127
0.48
0.58
5.00
MIN.
0.039
0.00
NOM.
0.042
-
MAX.
0.045
0.005
0.019
0.023
0.197
A
A1
b
0.41
0.51
4.90
0.094
0.47
0.25
5.13
4.90
3.96
1.73
1.27 BSC
6.15
4.37
2.85
-
0.013
0.017
0.189
0.016
0.020
0.193
0.004
0.019
0.010
0.202
0.193
0.156
0.068
0.050 BSC
0.242
0.172
0.112
-
b1
b2
b3
b4
c
0.20
5.00
4.80
3.86
1.63
0.30
5.25
5.00
4.06
1.83
0.008
0.197
0.189
0.152
0.064
0.012
0.207
0.197
0.160
0.072
D
D1
D2
D3
e
E
6.05
4.27
2.75
-
6.25
4.47
2.95
0.15
0.82
1.22
0.238
0.168
0.108
-
0.246
0.176
0.116
0.006
0.032
0.048
E1
E2
F
L
0.62
0.92
0.72
1.07
0.51
0.23
0.41
2.82
2.96
-
0.024
0.036
0.028
0.042
0.020
0.009
0.016
0.111
0.117
-
L1
K
W
W1
W2
W3
q
0°
10°
0°
10°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6044
Note
•
Millimeters will gover
Revision: 05-Aug-2019
Document Number: 66934
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
www.vishay.com
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
4.061
(0.160)
3.630
(0.143)
0.595
(0.023)
0.610
(0.024)
0.710
(0.028)
2.715
(0.107)
0.860
(0.034)
0.410
(0.016)
0.820
(0.032)
1.905
1.270
(0.075)
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
Document Number: 63818
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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