SQM120N03-1M5L [VISHAY]
Automotive N-Channel 30 V (D-S) 175 °C MOSFET; 汽车N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQM120N03-1M5L |
| 厂家： | 
VISHAY |
| 描述： | Automotive N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总9页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQM120N03-1m5L
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
30
R
DS(on) () at VGS = 10 V
0.0015
0.0020
120
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
Single
• AEC-Q101 Qualifiedd
D
• Compliant to RoHS Directive 2002/95/EC
TO-263
G
G
D S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
SQM120N03-1m5L-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
30
20
V
VGS
TC = 25 °C
120
Continuous Drain Currenta
ID
T
C = 125 °C
120
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
120
A
IDM
IAS
EAS
480
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
82
L = 0.1 mH
TC = 25 °C
336
mJ
W
375
Maximum Power Dissipationb
PD
T
C = 125 °C
125
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
40
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
0.4
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
30
-
2.0
-
-
V
1.5
2.5
VDS = 0 V, VGS
VGS = 0 V
=
20 V
-
100
1
nA
μA
A
VDS = 30 V
VDS = 30 V, TJ = 125 °C
VDS = 30 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
VGS = 0 V
VGS = 0 V
VGS = 10 V
-
-
50
250
-
-
-
ID(on)
120
-
V
V
GS = 10 V
GS = 10 V
ID = 30 A
-
-
-
-
-
0.0014 0.0015
ID = 30 A, TJ = 125 °C
ID = 30 A, TJ = 175 °C
ID = 20 A
-
-
0.0023
0.0028
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
VGS = 4.5 V
0.0016 0.0020
190
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 30 A
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
12 484 15 605
VGS = 0 V
VDS = 15 V, f = 1 MHz
-
2204
860
179
34
2755
1075
270
-
pF
-
-
Qgs
Qgd
Rg
V
GS = 10 V
VDS = 10 V, ID = 120 A
f = 1 MHz
-
nC
-
21
-
0.59
1.19
18
1.79
27
td(on)
tr
td(off)
tf
-
-
-
-
11
17
VDD = 15 V, RL = 0.3
ID 50 A, VGEN = 10 V, Rg = 1
ns
64
96
11
17
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
480
1.5
A
V
Forward Voltage
VSD
IF = 60 A, VGS = 0 V
0.81
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
120
90
60
30
0
200
160
120
80
VGS = 10 V thru 4 V
TC = 25 °C
40
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
1
2
3
4
5
0
0
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
350
280
210
140
70
1.5
1.2
0.9
0.6
0.3
0.0
TC = - 55 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
0
14
28
42
56
70
1
2
3
4
5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transconductance
Transfer Characteristics
0.005
0.004
0.003
0.002
0.001
0.000
15 000
12 000
9000
6000
3000
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
20
40
60
80
100
120
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
2.0
1.7
1.4
1.1
0.8
0.5
ID = 120 A
VDS = 15 V
VGS = 10 V
ID = 30 A
8
6
VGS = 4.5 V
4
2
0
0
40
80
120
160
200
- 50 - 25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.005
0.004
0.003
0.002
0.001
0.000
100
10
TJ = 150 °C
1
TJ = 150 °C
TJ = 25 °C
0.1
TJ = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
0.5
40
38
36
34
32
30
ID = 1 mA
0.1
- 0.3
- 0.7
- 1.1
- 1.5
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
www.vishay.com
4
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100 μs
IDM Limited
100
10
1 ms
10 ms
100 ms, 1 s, 10 s, DC
ID Limited
Limited by RDS(on)
*
1
TC = 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67333.
www.vishay.com
6
Document Number: 67333
S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
INCHES
MIN.
MILLIMETERS
MIN.
-B-
DIM.
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.410
-
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
10.414
-
A
E
-A-
c2
A
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
9.652
6.223
9.017
1.829
E1
K
6
b
b1
E3
b2
Thin lead
c*
Thick lead
Thin lead
c1
Thick lead
c2
D
A
A
b2
b
c
Detail “A”
E2
e
D1
D2
D3
E
M
M
A
0.010
PL
2
E1
E2
E3
e
b
b1
0.375
0.078
9.525
1.981
L1
0.100 BSC
2.54 BSC
SECTION A-A
DETAIL A (ROTATED 90°)
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
-
0.002
-
0.050
ECN: T10-0738-Rev. J, 03-Jan-11
DWG: 5843
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by max.
8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Document Number: 71198
Revison: 03-Jan-11
www.vishay.com
1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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