SQM120N06-06-GE3 [VISHAY]
TRANSISTOR 120 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power;
| 型号： | SQM120N06-06-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 120 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：715K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQM120N06-06
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
60
RDS(on) () at VGS = 10 V
ID (A)
0.006
120
Configuration
Single
TO-263
D
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
G
G
D S
Top View
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
SQM120N06-06-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
TC = 25 °Ca
C = 125 °C
120
Continuous Drain Current
ID
T
80
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
120
A
IDM
IAS
EAS
480
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
65
211
L = 0.1 mH
TC = 25 °C
mJ
W
230
Maximum Power Dissipationb
PD
T
C = 125 °C
76
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
40
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
0.65
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2036-Rev. B, 17-Oct-11
Document Number: 67065
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N06-06
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = 250 μA
60
-
3.0
-
-
V
VDS = VGS, ID = 250 μA
2.5
3.5
VDS = 0 V, VGS
=
20 V
-
100
1.0
50
nA
μA
A
VGS = 0 V
VDS = 60 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V
VGS = 0 V
VGS = 10 V
VGS = 10 V
-
-
-
-
250
-
120
-
ID = 30 A
-
-
-
-
0.0045 0.0060
Drain-Source On-State Resistancea
V
GS = 10 V
ID = 30 A, TJ = 125 °C
ID = 30 A, TJ = 175 °C
-
-
0.0104
0.0129
-
VGS = 10 V
Forward Transconductanceb
Dynamicb
VDS = 15 V, ID = 30 A
94
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
5196
708
336
96.5
24.6
27.2
1.2
16
6495
885
420
145
-
V
GS = 0 V
VDS = 25 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
VGS = 10 V
VDS = 30 V, ID = 75 A
f = 1 MHz
-
nC
-
-
0.6
-
1.7
24
td(on)
tr
td(off)
tf
-
14
21
VDD = 30 V, RL = 0.4
ID 75 A, VGEN = 10 V, Rg = 1
ns
-
34
51
-
9
14
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
480
1.5
A
V
Forward Voltage
VSD
IF = 75 A, VGS = 0
0.9
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2036-Rev. B, 17-Oct-11
Document Number: 67065
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N06-06
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
120
90
60
30
0
225
200
175
150
125
100
75
VGS = 10 V thru 7 V
VGS = 6 V
TC = 25 °C
50
VGS = 5 V
25
TC = 125 °C
TC = - 55 °C
0
0
2
4
6
8
10
0
4
8
12
16
20
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
200
160
120
80
TC = - 55 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
40
TC = - 55 °C
TC = 125 °C
0
0
2
4
6
8
10
0
14
28
42
56
70
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
10 000
8000
6000
4000
2000
0
0.020
0.016
0.012
0.008
0.004
0.000
Ciss
VGS = 10 V
Coss
Crss
0
10
20
30
40
50
60
0
20
40
60
80
100
120
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
S11-2036-Rev. B, 17-Oct-11
Document Number: 67065
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N06-06
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
2.1
1.8
1.5
1.2
0.9
0.6
ID = 10 A
VGS = 10 V
ID = 110 A
VDS = 20 V
8
6
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
20
40
60
80
100
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.05
0.04
0.03
0.02
0.01
0.00
TJ = 150 °C
1
0.1
TJ = 25 °C
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
80
77
74
71
68
65
ID = 10 mA
0.2
- 0.2
- 0.6
- 1.0
- 1.4
- 1.8
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-2036-Rev. B, 17-Oct-11
Document Number: 67065
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N06-06
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID Limited
100 μs
1 ms
100
10
10 ms
100 ms
1 s, 10 s, DC
Limited by RDS(on)
*
1
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2036-Rev. B, 17-Oct-11
Document Number: 67065
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N06-06
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
The characteristics shown in the two graphs
•
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67065.
S11-2036-Rev. B, 17-Oct-11
Document Number: 67065
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
INCHES
MIN.
MILLIMETERS
MIN.
-B-
DIM.
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.410
-
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
10.414
-
A
E
-A-
c2
A
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
9.652
6.223
9.017
1.829
E1
K
6
b
b1
E3
b2
Thin lead
c*
Thick lead
Thin lead
c1
Thick lead
c2
D
A
A
b2
b
c
Detail “A”
E2
e
D1
D2
D3
E
M
M
A
0.010
PL
2
E1
E2
E3
e
b
b1
0.375
0.078
9.525
1.981
L1
0.100 BSC
2.54 BSC
SECTION A-A
DETAIL A (ROTATED 90°)
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
-
0.002
-
0.050
ECN: T10-0738-Rev. J, 03-Jan-11
DWG: 5843
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by max.
8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Document Number: 71198
Revison: 03-Jan-11
www.vishay.com
1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
Document Number: 91000
1
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