SRP100GE3 [VISHAY]

DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode;


型号：	SRP100GE3
厂家：	VISHAY
描述：	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
文件：	总3页 (文件大小：128K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SRP100A thru SRP100K

Vishay Semiconductors

Fast Switching Plastic Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 800 V

30 A

100 ns, 200 ns

10 µA

I_R

DO-204AL (DO-41)

V_F

1.3 V

T_jmax.

125 °C

Features

• Fast switching for high efficiency

• Low forward voltage drop

• Low leakage current

Mechanical Data

Case: DO-204AL, molded plastic body

• High forward surge capability

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and MIL-STD-750, Method

2026

Typical Applications

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for Polarity: Color band denotes cathode end

consumer and Telecommunication.

(Note: These devices are not Q101 qualified. There-

fore, the devices specified in this datasheet have not

been designed for use in automotive or Hi-Rel appli-

cations.)

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

SRP

100A

SRP

100B

SRP

100D

SRP

100G

SRP

100J

SRP

100K

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum DC blocking voltage

100

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

Operating junction temperature range

Storage temperature range

T_J

- 50 to + 125

- 50 to + 150

°C

T_STG

Document Number 88743

28-Apr-05

www.vishay.com

SRP100A thru SRP100K

Vishay Semiconductors

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Test condition

Symbol

V_F

SRP

100A

SRP

100B

SRP

100D

SRP

100G

SRP

100J

SRP

100K

Unit

Maximum instantaneous at 1.0 A

forward voltage

1.3

Maximum DC reverse

current at rated DC

blocking voltage

_A= 25 °C

I_R

200

µA

T_A= 100 °C

Maximum reverse

recovery time

at I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

t_rr

100

200

Typical junction

capacitance

at 4.0 V, 1 MHz

C_J

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

R_θJA

SRP

100A

SRP

100B

SRP

100D

SRP

100G

SRP

100J

SRP

100K

Unit

Typical thermal resistance ⁽¹⁾

°C/W

Note: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

1.25

1.0

T_A= 75°C

8.3ms Single Half Sine-Wave

I_(pk)

I_(AV)

0.375" (9.5mm)

Lead Length

1.0 Cycle

0.75

0.5

0.25

Capacitive Load

I_(pk)

5.0

I_(AV)

5.0

100

120

140

Number of Cycles at 60 H_Z

Ambient Temperature (°C)

Figure 1. Forward Current Derating Curves

Figure 2. Maximum Non-repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88743

28-Apr-05

SRP100A thru SRP100K

Vishay Semiconductors

100

= 25°C

f = 1.0MH_Z

Vsig = 50mVp-p

T_J= 25°C

Pulse Width = 300µs

1% Duty Cycle

0.1

0.01

0.4

100

1.8

Instantaneous Forward Voltage (V)

0.6

1.0

1.2

1.4

1.6

2.0

0.8

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

100

T_J= 100°C

0.1

T_J= 25°C

0.1

0.01

Percent of Rated Peak Reverse Voltage (%)

0.01

0.1

100

t, Pulse Duration (sec.)

Figure 4. Typical Reverse Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

Document Number 88743

28-Apr-05

www.vishay.com

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