SS10P3CLHM3_A/I [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 30V V(RRM), Silicon, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN;型号: | SS10P3CLHM3_A/I |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 30V V(RRM), Silicon, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN PC 功效 瞄准线 光电二极管 |
文件: | 总5页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SS10P2CL, SS10P3CL
Vishay General Semiconductor
www.vishay.com
High Current Density Surface Mount
Dual Common Cathode Schottky Rectifiers
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
K
• Low thermal resistance
1
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
TO-277A (SMPC)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1
K
Cathode
Anode 2
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
20 V, 30 V
200 A
VRRM
MECHANICAL DATA
IFSM
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
EAS
20 mJ
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
VF at IF = 5 A
TJ max.
0.338 V
150 °C
- halogen-free, RoHS-compliant and
Package
TO-277A (SMPC)
Diode variations
Dual common cathode
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS10P2CL
S102CL
20
SS10P3CL
S103CL
30
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
V
A
total device
Maximum average forward rectified current (fig. 1)
per diode
10
5.0
Peak forward surge current 10 ms single half sine-wave
IFSM
200
20
A
superimposed on rated load
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
Operating junction and storage temperature range
EAS
mJ
°C
TJ, TSTG
-55 to +150
Revision: 13-Jan-15
Document Number: 89036
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS10P2CL, SS10P3CL
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.391
0.440
0.272
0.338
95
MAX.
-
UNIT
IF = 2.5 A
TA = 25 °C
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
0.52
-
Instantaneous forward voltage
per diode
(1)
VF
V
TA = 125 °C
0.42
850
55
TA = 25 °C
μA
mA
pF
(2)
Reverse current per diode
Rated VR
IR
TA = 125 °C
37
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
560
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS10P2CL
SS10P3CL
UNIT
°C/W
(1)
RJA
60
3
Typical thermal resistance per diode
RJL
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS10P3CL-M3/86A
SS10P3CL-M3/87A
SS10P3CLHM3/86A (1)
SS10P3CLHM3/87A (1)
SS10P3CLHM3_A/H (1)
SS10P3CLHM3_A/I (1)
0.10
0.10
0.10
0.10
0.10
0.10
86A
87A
86A
87A
H
1500
6500
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
I
Note
(1)
AEC-Q101 qualified
Revision: 13-Jan-15
Document Number: 89036
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS10P2CL, SS10P3CL
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
12
10
8
1000
100
Resistive or Inductive Load
TA = 150 °C
10
1
TA = 125 °C
6
0.1
0.01
4
TA = 25 °C
TL measured
at the Cathode Band Terminal
2
0
0.001
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
2.4
10 000
D = 0.5
D = 0.8
TJ = 25 °C
D = 0.3
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.2
2.0
1.6
1.2
0.8
D = 0.1
D = 1.0
1000
T
0.4
0
D = tp/T
4
tp
100
0
1
2
3
5
6
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
TA = 150 °C
10
TA = 125 °C
TA = 25 °C
1
0.1
10
Junction to Ambient
0.01
1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Jan-15
Document Number: 89036
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS10P2CL, SS10P3CL
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 13-Jan-15
Document Number: 89036
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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