SS10P4C-M3-86A [VISHAY]
High Current Density Surface Mount Schottky Barrier Rectifiers; 高电流密度表面贴装肖特基整流器
| 型号： | SS10P4C-M3-86A |
| 厂家： | 
VISHAY |
| 描述： | High Current Density Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总5页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SS10P3C, SS10P4C
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.1 mm
eSMPTM Series
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
K
• Low thermal resistance
1
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified
2
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-277A (SMPC)
• Halogen-free according to IEC 61249-2-21 definition
Anode 1
K
Cathode
Anode 2
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
30 V, 40 V
200 A
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
VRRM
IFSM
EAS
20 mJ
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
VF at IF = 5 A
TJ max.
0.37 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling
diodes, DC/DC converters and polarity protection
application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS10P3C
S103C
30
SS10P4C
S104C
40
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
V
A
total device
Maximum average forward rectified current (fig. 1)
per diode
10
5.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
20
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
Operating junction and storage temperature range
EAS
mJ
°C
TJ, TSTG
- 55 to + 150
Document Number: 89035
Revision: 10-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS10P3C, SS10P4C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.40
0.45
0.29
0.37
56
MAX.
-
UNIT
IF = 2.5 A
TA = 25 °C
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
0.53
-
Instantaneous forward voltage
per diode
(1)
VF
V
TA = 125 °C
0.44
550
45
TA = 25 °C
μA
mA
pF
(2)
Reverse current per diode
Rated VR
IR
TA = 125 °C
28
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
430
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS10P3C
SS10P4C
UNIT
°C/W
(1)
RJA
60
3
Typical thermal resistance per diode
RJL
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SS10P4C-M3/86A
SS10P4C-M3/87A
SS10P4CHM3/86A (1)
SS10P4CHM3/87A (1)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.10
0.10
0.10
0.10
86A
87A
86A
87A
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1)
Automotive grade
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89035
Revision: 10-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS10P3C, SS10P4C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
12
1000
100
Resistive or Inductive Load
10
8
TA = 150 °C
10
1
TA = 125 °C
6
0.1
0.01
4
TA = 25 °C
TL measured
at the Cathode Band Terminal
2
0
0.001
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
2.5
10 000
D = 0.3
D = 0.8
D = 0.5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.2
D = 0.1
2.0
1.5
1.0
0.5
0
D = 1.0
1000
T
D = tp/T
tp
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
10
1
TA = 150 °C
10
TA = 125 °C
1
TA = 25 °C
0.1
Junction to Ambient
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89035
Revision: 10-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS10P3C, SS10P4C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC TO-277A
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89035
Revision: 10-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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