SS12/11T [VISHAY]

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, PLASTIC PACKAGE-2;
SS12/11T
型号: SS12/11T
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, PLASTIC PACKAGE-2

瞄准线 光电二极管
文件: 总4页 (文件大小:337K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SS12 thru SS16  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
1.0 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Epoxy meets UL 94V-0 flammability rating  
20 V to 60 V  
40 A  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise specified)  
A
PARAMETER  
SYMBOL  
SS12  
SS13  
S3  
SS14  
S4  
SS15  
S5  
SS16  
S6  
UNIT  
Device marking code  
S2  
V
V
V
V
A
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (see Fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)  
A
PARAMETER  
TEST CONDITION SYMBOL  
SS12  
SS13  
SS14  
SS15  
SS16  
UNIT  
Maximum instantaneous forward  
voltage  
at 1.0 A (1)  
VF  
IR  
0.50  
0.75  
5.0  
V
TA = 25 °C  
0.2  
Maximum DC reverse current at rated  
DC blocking voltage (1)  
mA  
TA = 100 °C  
6.0  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number 88746  
20-Feb-06  
www.vishay.com  
1
SS12 thru SS16  
Vishay General Semiconductor  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise specified)  
A
PARAMETER  
SYMBOL  
SS12  
SS13  
SS14  
SS15  
SS16  
UNIT  
RθJA  
RθJL  
88  
28  
Typical thermal resistance (1)  
°C/W  
Note:  
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
1.0  
50  
TJ = 125 °C  
Resistive or  
Inductive Load  
10  
TJ = 150 °C  
P. C. B. M o unted on  
0.2 x 0.2" (5.0 x 5.0 mm)  
Copper Pad Areas  
0.5  
1
TJ = 25 °C  
SS12 - SS14  
SS15 & SS16  
0.1  
Pulse Width = 300 µs  
1 % Duty Cycle  
SS12 - SS14  
SS15 & SS16  
0
0.01  
0.2  
50  
70  
90  
110  
130  
150  
170  
0
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Lead Temperature (°C)  
Instantaneous Forward Voltage (V)  
Figure 1. Forward Current Derating Curve  
Figure 3. Typical Instantaneous Forward Characteristics  
100  
50  
40  
30  
20  
10  
0
At rated T  
8.3 ms Single Half Sine-Wave  
L
SS12 - SS14  
SS15 & SS16  
TJ = 125 °C  
10  
1
0.1  
0.01  
TJ = 150 °C  
TJ = 25 °C  
80  
0.001  
1
10  
100  
0
20  
40  
60  
100  
Number of Cycles at 60 Hz  
Percent of Rated Peak Reverse Voltage (%)  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
Figure 4. Typical Reverse Characteristics  
www.vishay.com  
2
Document Number 88746  
20-Feb-06  
SS12 thru SS16  
Vishay General Semiconductor  
400  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
SS12 - SS14  
SS15 & SS16  
10  
0.1  
1
10  
100  
Reverse Voltage (V)  
Figure 5. Typical Junction Capacitance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-214AC (SMA)  
Cathode Band  
Mounting Pad Layout  
0.074 MAX.  
(1.88 MAX.)  
0.066 MIN.  
(1.68 MIN.)  
0.065 (1.65)  
0.049 (1.25)  
0.110 (2.79)  
0.100 (2.54)  
0.177 (4.50)  
0.157 (3.99)  
0.060 MIN.  
(1.52 MIN.)  
0.012 (0.305)  
0.006 (0.152)  
0.208  
(5.28) REF  
0.090 (2.29)  
0.078 (1.98)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
0 (0)  
0.208 (5.28)  
0.194 (4.93)  
Document Number 88746  
20-Feb-06  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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