SS15P3S-M3/87A [VISHAY]

DIODE 15 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode;
SS15P3S-M3/87A
型号: SS15P3S-M3/87A
厂家: VISHAY    VISHAY
描述:

DIODE 15 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode

PC 功效 瞄准线 光电二极管
文件: 总5页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SS15P3S  
Vishay General Semiconductor  
www.vishay.com  
SMD Photovoltaic Solar Cell Protection Schottky Rectifier  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMP® Series  
• Ideal for automated placement  
• Guardring for overvoltage protection  
K
• Low forward voltage drop, low power losses  
• High efficiency  
• Low thermal resistance  
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
2
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TO-277A (SMPC)  
K
Anode 1  
Anode 2  
Cathode  
TYPICAL APPLICATIONS  
For use in solar cell junction box as a bypass diode for  
protection, using DC forward current without reverse bias.  
PRIMARY CHARACTERISTICS  
IF(AV)  
15 A  
30 V  
MECHANICAL DATA  
VRRM  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
280 A  
20 mJ  
0.42 V  
150 °C  
EAS  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
VF at IF = 15 A  
TJ max.  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Package  
TO-277A (SMPC)  
Single die  
Diode variations  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS15P3S  
153S  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF  
30  
V
A
15 (1)  
Maximum DC forward current (fig. 1)  
4.5 (2)  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
280  
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C  
Operating junction and storage temperature range  
EAS  
TOP, TSTG  
TJ  
20  
mJ  
°C  
°C  
- 55 to + 150  
200  
Junction temperature in DC forward current without reverse bias, t 1 h (3)  
Notes  
(1)  
(2)  
(3)  
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink  
Free air, mounted on recommended copper pad area  
Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test  
Revision: 12-Dec-13  
Document Number: 89128  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS15P3S  
Vishay General Semiconductor  
www.vishay.com  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
IF = 7.5 A  
0.43  
0.50  
0.32  
0.42  
150  
59  
-
TA = 25 °C  
IF = 15 A  
IF = 7.5 A  
IF = 15 A  
0.57  
-
(1)  
Instantaneous forward voltage  
VF  
V
TA = 125 °C  
0.49  
1000  
120  
TA = 25 °C  
μA  
(2)  
Reverse current  
VR = 30 V  
IR  
TA = 125 °C  
mA  
Typical junction capacitance  
4.0 V, 1 MHz  
CJ  
930  
-
pF  
Notes  
(1) Pulse test: 300 μs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
(1)  
RJA  
100  
3
Typical thermal resistance  
°C/W  
(2)  
RJM  
Notes  
(1) Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient.  
(2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance RJM - junction to mount.  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
SS15P3S-M3/86A  
SS15P3S-M3/87A  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
0.10  
0.10  
86A  
87A  
1500  
6500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
18  
Notes  
(1)  
TM = 100 °C (1)  
16  
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x  
100 mm fin heat sink, TM measured at the terminal of cathode  
band  
TA = 25 °C (2)  
14  
12  
10  
8
TA = 25 °C (3)  
(2)  
(3)  
Mounted on 30 mm x 30 mm Al PCB (RJA = 20 °C/W)  
Mounted on 30 mm x 30 mm x 2 copper pad areas FR4 PCB  
(RJA = 30 °C/W)  
TA = 25 °C (4)  
6
(4)  
(5)  
Mounted on 25 mm x 25 mm x 2 copper pad areas FR4 PCB  
(RJA = 30 °C/W)  
(5)  
4
Free air, mounted on recommended copper pad area  
2
(RJA = 100 °C/W)  
0
0
25  
50  
75  
100  
125  
150  
Ambient Temperature (°C)  
Fig. 1 - Maximum Current Derating Curve  
Revision: 12-Dec-13  
Document Number: 89128  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS15P3S  
Vishay General Semiconductor  
www.vishay.com  
9
8
7
6
5
4
3
2
1
0
1000  
100  
10  
D = 0.8  
TA = 150 °C  
TA = 125 °C  
D = 0.5  
D = 0.3  
D = 0.2  
D = 1.0  
1
D = 0.1  
T
0.1  
TA = 25 °C  
0.01  
0.001  
D = tp/T  
tp  
0
2
4
6
8
10  
12  
14  
16  
18  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Average Forward Current (A)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 2 - Forward Power Loss Characteristics  
Fig. 4 - Typical Reverse Leakage Characteristics  
10 000  
1000  
100  
100  
10  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TA = 150 °C  
T
A = 125 °C  
T
A = 25 °C  
1
0.1  
0.1  
1
10  
100  
0
0.1  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
Reverse Voltage (V)  
Fig. 5 - Typical Junction Capacitance  
Revision: 12-Dec-13  
Document Number: 89128  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS15P3S  
Vishay General Semiconductor  
www.vishay.com  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-277A (SMPC)  
0.187 (4.75)  
0.175 (4.45)  
0.016 (0.40)  
0.006 (0.15)  
K
0.262 (6.65)  
0.250 (6.35)  
0.242 (6.15)  
0.238 (6.05)  
2
1
0.047 (1.20)  
0.039 (1.00)  
0.171 (4.35)  
0.167 (4.25)  
0.146 (3.70)  
0.134 (3.40)  
Mounting Pad Layout  
0.087 (2.20)  
0.075 (1.90)  
0.189 (4.80)  
MIN.  
0.189 (4.80)  
0.173 (4.40)  
0.186 (4.72)  
MIN.  
0.268  
(6.80)  
0.155 (3.94)  
NOM.  
0.030 (0.75) NOM.  
0.049 (1.24)  
0.037 (0.94)  
0.050 (1.27)  
MIN.  
0.084 (2.13) NOM.  
0.053 (1.35)  
0.041 (1.05)  
0.041  
(1.04)  
0.055 (1.40)  
MIN.  
Conform to JEDEC TO-277A  
Revision: 12-Dec-13  
Document Number: 89128  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
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particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

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