SS1H10/13T [VISHAY]
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN;
| 型号： | SS1H10/13T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS1H9 & SS1H10
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Rectifier
High Barrier Tecnology for improved high
temperature performance
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF
1.0 A
90 V to 100 V
50 A
DO-214AC (SMA)
0.62 V
IR
1.0 µA
Tj max.
175 °C
Features
Mechanical Data
• Low profile package
Case: DO-214AC (SMA)
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
Polarity: Color band denotes the cathode end
• High surge capability
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Device marking code
Symbol
SS1H9
S9
SS1H10
S10
Unit
Maximum repetitive peak reverse voltage
VRRM
VRWM
VDC
90
100
V
V
V
A
A
Working peak reverse voltage
90
90
100
100
Maximum DC blocking voltage
Maximum average forward rectified current (see Fig. 1)
IF(AV)
IFSM
1.0
50
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at tp = 2.0 µs, 1 KHz
Storage temperature range
IRRM
TSTG
TJ
1.0
A
- 65 to + 175
175
°C
°C
Maximum operating temperature
Document Number 88747
21-Oct-05
www.vishay.com
1
SS1H9 & SS1H10
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified#
Parameter
Test condition
Symbol
VF
SS1H9
SS1H10
Unit
V
Maximum instantaneous forward IF = 1.0 A,
voltage at: (1)
TJ = 25 C
0.77
0.62
0.86
0.70
IF = 1.0 A,
IF = 2.0 A,
IF = 2.0 A,
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Maximum DC reverse current at
rated DC blocking voltage(1)
TJ = 25 °C
IR
1.0
0.5
µA
mA
TJ = 125 °C
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Maximum thermal resistance(1)
Symbol
RθJA
RθJL
SS1H9
SS1H10
Unit
88
30
°C/W
Notes:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
60
1.2
1.0
0.8
0.6
0.4
0.2
0
50
40
30
20
10
0
1
10
100
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Tl - Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
Document Number 88747
21-Oct-05
SS1H9 & SS1H10
Vishay General Semiconductor
100
10
1000
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
0.1
10
1
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10000
100
TJ = 175 °C
1000
TJ = 150 °C
100
10
1
TJ = 125 °C
10
TJ = 25 °C
0.10
0.01
1.0
10
20
30
40
50
60
70
80
90
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal
Package outline dimensions in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 MAX.
(1.88 MAX.)
0.066 MIN.
(1.68 MIN.)
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.060 MIN.
(1.52 MIN.)
0.012 (0.305)
0.006 (0.152)
0.208
(5.28) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
0.030 (0.76)
Document Number 88747
21-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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