SS22S-M3 [VISHAY]
Ideal for automated placement;
| 型号： | SS22S-M3 |
| 厂家： | 
VISHAY |
| 描述： | Ideal for automated placement |
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS22S-M3, SS23S-M3, SS24S-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
IFSM
20 V, 30 V, 40 V
40 A
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
VF at IF = 2.0 A
TJ max.
0.517 V
150 °C
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
Package
DO-214AC (SMA)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variation
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS22S
22S
SS23S
23S
30
SS24S
24S
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
IF(AV)
20
40
V
A
2.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
T
J, TSTG
-55 to +150
Revision: 09-Dec-13
Document Number: 89407
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS22S-M3, SS23S-M3, SS24S-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.436
0.517
13
MAX.
UNIT
IF = 1 A
-
0.55
200
8
(1)
Instantaneous forward voltage
TJ = 25 °C
VF
V
IF = 2 A
TJ = 25 °C
μA
mA
pF
(2)
Reverse current
Rated VR
4.0 V, 1 MHz
IR
TJ = 100 °C
1.65
130
Typical junction capacitance
CJ
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS22S
SS23S
75
SS24S
UNIT
(1)
RJA
Typical thermal resistance
°C/W
(1)
RJL
25
Note
(1)
PCB mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
SS24S-M3/61T
SS24S-M3/5AT
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.064
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
2.4
2.0
1.6
1.2
0.8
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.8
D = 0.5
Resistive or Inductive Load
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
P.C.B. Mounted on
0.4" x 0.4" (10 mm x 10 mm)
Copper Pad Areas
D = tp/T
tp
0
25
50
75
100
125
150
175
0
0.5
1.0
1.5
2.0
2.5
Average Forward Current (A)
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 09-Dec-13
Document Number: 89407
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS22S-M3, SS23S-M3, SS24S-M3
www.vishay.com
Vishay General Semiconductor
50
40
30
20
10
0
100 000
8.3 ms Single Half Sine-Wave
at Rated TL
TJ = 150 °C
10 000
TJ = 125 °C
1000
100
TJ = 25 °C
10
1
0
10
100
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 60 Hz
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Reverse Leakage Characteristics
100
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 09-Dec-13
Document Number: 89407
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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