SS25/2T [VISHAY]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN;
SS25/2T
型号: SS25/2T
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

功效 瞄准线 光电二极管
文件: 总4页 (文件大小:310K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SS22 thru SS26  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
2.0 A  
20 V to 60 V  
75 A  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
Tj max.  
DO-214AA (SMB)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AA (SMB)  
• Ideal for automated placement  
Epoxy meets UL 94V-0 Flammability rating  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
SS22  
S2  
SS23  
S3  
SS24  
S4  
SS25  
S5  
SS26  
S6  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
20  
21  
30  
28  
40  
35  
50  
42  
60  
Maximum DC blocking voltage  
Max. average forward rectified current  
at TL (See Fig. 1)  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
EAS  
75  
20  
A
Non-repetitive avalanche energy  
mJ  
at TA = 25 °C, IAS = 2.0 A, L = 10 mH  
Electrostatic discharge capacitor voltage  
VC  
8.0  
KV  
Human body model: C = 100 pF, R = 1.5 kΩ  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
Document Number 88784  
14-Jul-05  
www.vishay.com  
1
SS22 thru SS26  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C unless otherwise specified#  
Parameter  
Test condition Symbol  
SS22  
SS23  
0.5  
SS24  
SS25  
SS26  
Unit  
V
at 2.0 A(1)  
Maximum instantaneous forward  
voltage  
VF  
0.7  
Maximum DC reverse current at  
rated DC blocking voltage(1)  
TA = 25 °C  
IR  
0.4  
10  
mA  
TA = 100 °C  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Typical thermal resistance (1)  
Symbol  
RθJA  
RθJL  
SS22  
SS23  
SS24  
SS25  
SS26  
Unit  
75  
17  
°C/W  
Notes:  
(1) P.C.B. mounted with 0.55 x 0.55" (14 x 14 mm) copper pad areas  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
2.0  
100  
80  
At rated TL  
8.3 ms Single Half Sine-Wave  
Resistive or  
Inductive Load  
1.5  
60  
1.0  
40  
P.C.B. Mounted on  
0.2 x 0.2” (5.0 x 5.0 mm)  
Copper pad areas  
0.5  
0
20  
0
SS22 - SS24  
SS25 & SS26  
50  
70  
90  
110  
130  
150  
1
10  
100  
Lead Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Surge Current  
www.vishay.com  
2
Document Number 88784  
14-Jul-05  
SS22 thru SS26  
Vishay General Semiconductor  
50  
10  
500  
100  
Pulse Width = 300 µs  
1% Duty Cycle  
TJ = 150 °C  
1
0.1  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
SS22 - SS24  
SS25 & SS26  
SS22 - SS24  
SS25 & SS26  
0.01  
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
SS22 - SS24  
SS25 & SS26  
TA = 125 °C  
10  
1
TA = 75 °C  
TA = 25 °C  
0.1  
0.01  
0.001  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Current Characteristics  
Package outline dimensions in inches (millimeters)  
DO-214AA (SMB)  
Cathode Band  
0.086 (2.20)  
0.077 (1.95)  
0.155 (3.94)  
0.130 (3.30)  
Mounting Pad Layout  
0.85 MAX  
(2.159 MAX)  
0.180 (4.57)  
0.160 (4.06)  
0.086 MIN  
(2.18 MIN)  
0.012 (0.305)  
0.006 (0.152)  
0.060 MIN  
(1.52 MIN)  
0.220 REF  
0.096 (2.44)  
0.084 (2.13)  
0.008(0.2)  
0 (0)  
0.060 (1.52)  
0.030 (0.76)  
0.220 (5.59)  
0.205 (5.21)  
Document Number 88784  
14-Jul-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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