SS26SHE3_A/H [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN;型号: | SS26SHE3_A/H |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN 功效 瞄准线 光电二极管 |
文件: | 总4页 (文件大小:85K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SS25S, SS26S
Vishay General Semiconductor
www.vishay.com
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
50 V, 60 V
40 A
VRRM
MECHANICAL DATA
IFSM
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
VF at IF = 2.0 A
TJ max.
0.53 V
Base P/N-E3
-
RoHS-compliant, commercial grade
150 °C
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Package
DO-214AC (SMA)
Single
Diode variations
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS25S
25S
SS26S
26S
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
IF(AV)
50
60
V
A
2.0
40
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction temperature range
TJ, TSTG
-55 to +150
°C
Revision: 09-Nov-16
Document Number: 89055
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS25S, SS26S
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.51
0.60
0.43
0.53
-
MAX.
-
UNIT
IF = 1.0 A
TA = 25 °C
IF = 2.0 A
IF = 1.0 A
IF = 2.0 A
0.75
-
Maximum instantaneous
VF
V
forward voltage (1)
TA = 125 °C
0.62
200
10
TA = 25 °C
μA
Maximum reverse current (2)
Rated VR
IR
TA = 125 °C
1.5
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS25S
SS26S
UNIT
RJA
100
28
Typical thermal resistance (1)
°C/W
RJL
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS26S-E3/61T
0.064
61T
5AT
H
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS26S-E3/5AT
0.064
SS26SHE3_B/H (1)
SS26SHE3_B/I (1)
0.064
0.064
I
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
2.4
2.0
1.6
1.2
0.8
0.4
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.8
D = 0.5
Resistive or Inductive Load
D = 0.3
D = 0.2
D = 1.0
D = 0.1
PCB Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
T
D = tp/T
1.6
tp
0
0.4
0.8
1.2
2.0
2.4
80
90
100
110
120
130
140
150
Average Forward Current (A)
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 09-Nov-16
Document Number: 89055
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS25S, SS26S
Vishay General Semiconductor
www.vishay.com
100
10
1
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 125 °C
TA = 150 °C
TA = 25 °C
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 000
TA = 150 °C
1000
100
10
TA = 125 °C
1
TA = 25 °C
0.1
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 09-Nov-16
Document Number: 89055
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号:
SS26SHE3_A/I
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
VISHAY
SS26SHE3_B/I
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
VISHAY
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