SS2P3L-HE3 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 2A, 30V V(RRM),;
| 型号： | SS2P3L-HE3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 2A, 30V V(RRM), 二极管 |
| 文件： | 总4页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS2P2L & SS2P3L
Vishay General Semiconductor
New Product
Low VF Current Density Surface Mount
Schottky Barrier Rectifiers
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
2 A
20 V, 30 V
50 A
EAS
11.25 mJ
0.45 V
VF
Tj max.
150 °C
DO-220AA (SMP)
Features
Mechanical Data
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Case: DO-220AA (SMP)
Epoxy meets UL-94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Typical Applications
For use in low voltage high frequency inverters, free-
wheelling, dc-to-dc converters, and polarity protection
applications
Maximum Ratings
(TA = 25 °C unless otherwise specified)
Parameter
Symbol
SS2P2L
22L
SS2P3L
23L
Unit
Device marking code
Maximum repetive peak reverse voltage
VRRM
IF(AV)
IFSM
20
30
V
A
A
Maximum average forward rectified current see Fig. 1
2.0
50
Peak forward surge current 10 ms single half sine-
wave superimposed on rated load
Non-repetitive avalanche energy
EAS
11.25
mJ
at IAS = 1.5 A, L = 10 mH, TJ = 25 °C
Voltage rate of change (rated VR)
dv/dt
10000
V/us
°C
Operating junction and storage temperature range
T
J, TSTG
- 55 to + 150
Document Number 88916
10-Nov-05
www.vishay.com
1
SS2P2L & SS2P3L
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise specified)
Parameter
Test condition
at IF = 2 A, TJ = 25 °C
at IF = 2 A, TJ = 125 °C
Symbol
VF
Typ
Max.
Unit
V
Maximum instantaneous
forward voltage (1)
0.45
0.38
0.50
0.45
Maximum reverse current at
TJ = 25 °C
IR
-
200
20
µA
mA
(1)
9.0
TJ = 125 °C
rated VR
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
130
pF
Thermal Characteristics
(TA = 25 °C unless otherwise specified)
Parameter
Typical thermal resistance (2)
Symbol
RθJA
RθJL
SS2P2L
SS2P3L
Unit
115
15
20
°C/W
RθJC
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJL is mea-
sured at the terminal of cathode band. RθJC is measured at the top centre of the body
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
2.4
2.0
1.6
1.2
0.8
50
40
30
20
TJ measured
at the cathode band terminal
0.4
0
10
0
1
10
100
80
90
100
110
120
130
140
150
Lead Temperature (°C)
Number of Cycles at 50 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88916
10-Nov-05
SS2P2L & SS2P3L
Vishay General Semiconductor
100
10
1000
100
1
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.1
0.1
0.1
1
10
100
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
100000
TJ = 150 °C
10000
TJ = 125 °C
1000
100
TJ = 25 °C
10
10
1
1
0.01
0.1
0.1
1
10
100
10
20
30
40 50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal impedance
Package dimensions in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF
Cathode band
0.036 (0.91)
0.024 (0.61)
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.030
(0.762)
0.105
(2.67)
0.025
(0.635)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.050
(1.27)
0.100
(2.54)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Document Number 88916
10-Nov-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
SS2P3L-HE3/84A
2A, 30V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
VISHAY
SS2P3L-HE3/85A
2A, 30V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
VISHAY
SS2P3L-M3/85A
DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明