SS3H10HE3_A/H [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2 PIN;型号: | SS3H10HE3_A/H |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2 PIN 功效 瞄准线 光电二极管 |
文件: | 总4页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SS3H9, SS3H10
Vishay General Semiconductor
www.vishay.com
High Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AB (SMC)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
IF(AV)
3.0 A
90 V, 100 V
100 A
VRRM
IFSM
VF
0.65 V
MECHANICAL DATA
IR
20 μA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
Package
Diode variations
175 °C
DO-214AB
Single
Base P/N-E3
-
RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3H9
MS9
90
SS3H10
MS10
100
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: TL = 115 °C
VRRM
VRWM
VDC
V
V
V
A
90
100
90
100
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
Critical rate of rise of reverse voltage
IRRM
dV/dt
1.0
A
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
Revision: 28-Apr-14
Document Number: 88752
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3H9, SS3H10
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS3H9
SS3H10
UNIT
TJ = 25 °C
0.8
0.65
20
Maximum instantaneous forward voltage (1) IF = 3.0 A
VF
V
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
μA
(2)
Maximum reverse current at rated VR
IR
4
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3H9
SS3H10
UNIT
Typical thermal resistance, junction to lead at TL = 25 °C
Typical thermal resistance, junction to ambient (1)
RJL
20
50
°C/W
RJA
Note
(1) Units mounted on PCB with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS3H9-E3/57T
0.235
57T
9AT
H
850
3500
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS3H9-E3/9AT
0.235
SS3H9HE3_A/H (1)
SS3H9HE3_A/I (1)
0.235
0.235
I
3500
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
125
100
75
50
25
0
1
10
100
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 28-Apr-14
Document Number: 88752
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3H9, SS3H10
Vishay General Semiconductor
www.vishay.com
100
10
1000
100
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 000
100
TJ = 175 °C
TJ = 150 °C
1000
100
10
T
J = 125 °C
10
1
TJ = 25 °C
0.1
1
0.01
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 28-Apr-14
Document Number: 88752
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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