SS3P3HE3/85A [VISHAY]
High Current Density Surface Mount Schottky Barrier Rectifiers; 高电流密度表面贴装肖特基整流器型号: | SS3P3HE3/85A |
厂家: | VISHAY |
描述: | High Current Density Surface Mount Schottky Barrier Rectifiers |
文件: | 总4页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
SS3P3
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
eSMPTM Series
• Ideal for automated placement
• Low forward voltage drop, low power
losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-220AA (SMP)
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
3 A
30 V
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
50 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
EAS
VF
11.25 mJ
0.43 V
150 °C
TJ max.
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS3P3
33
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
VRRM
IF(AV)
30
V
A
3.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
50
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
EAS
dV/dt
11.25
10 000
mJ
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 3 A
IF = 3 A
TJ = 25 °C
TJ = 125 °C
0.52
0.43
0.58
0.48
Maximum instantaneous forward voltage(1)
VF
V
TJ = 25 °C
TJ = 125 °C
-
200
20
µA
mA
(2)
Maximum reverse current at rated VR
IR
9.0
Typical junction capacitance
4.0 V, 1 MHz
CJ
130
pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Document Number: 88944
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
SS3P3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS3P3
UNIT
RθJA
RθJL
ReJC
95
15
20
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 15 x 15 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top centre of the body
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
SS3P3-E3/84A
0.024
84A
85A
84A
85A
3000
10 000
3000
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS3P3-E3/85A
0.024
SS3P3HE3/84A (1)
SS3P3HE3/85A (1)
0.024
0.024
10 000
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
3.0
2.5
2.0
1.5
1.0
50
40
30
20
10
0
TL Measured
0.5
at the Cathode Band Terminal
0
80
90
100
110
120
130
140
150
1
10
Number of Cycles at 50 Hz
100
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88944
Revision: 19-May-08
New Product
SS3P3
Vishay General Semiconductor
100
10
1000
TJ = 150 °C
100
TJ = 25 °C
1
TJ = 125 °C
10
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100 000
1000
100
10
TJ = 150 °C
10 000
1000
100
10
TJ = 125 °C
TJ = 25 °C
1
0.1
1
0.01
10
20
30
40
50
60
70
80
90 100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode band
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.032 (0.80)
0.087 (2.20)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.050
(1.27)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
Document Number: 88944
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号:
SS3P3HM3/85A
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
VISHAY
SS3P3L-G3/86A
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode
VISHAY
SS3P3L-G3/87A
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode
VISHAY
SS3P3L-M3/86A
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode
VISHAY
SS3P3LHE3/86A
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, TO-277A, ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN
VISHAY
SS3P3LHG3/86A
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明