SS3P5L-E386A [VISHAY]
Low VF High Current Density Surface Mount Schottky Barrier Rectifiers; 低VF高电流密度表面贴装肖特基整流器型号: | SS3P5L-E386A |
厂家: | VISHAY |
描述: | Low VF High Current Density Surface Mount Schottky Barrier Rectifiers |
文件: | 总5页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
SS3P5L & SS3P6L
Vishay General Semiconductor
Low V High Current Density Surface Mount
F
Schottky Barrier Rectifiers
FEATURES
eSMPTM Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
1
• High efficiency
2
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
TO-277A (SMPC)
Anode 1
Anode 2
K
Cathode
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
3 A
50 V, 60 V
150 A
VRRM
IFSM
MECHANICAL DATA
EAS
20 mJ
Case: TO-277A (SMPC)
VF at IF = 3.0 A
Tj max.
0.478 V
150 °C
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS3P5L
S35
SS3P6L
S36
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
VRRM
IF(AV)
50
60
V
A
3.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2 A, L = 10 mH, Tj = 25 °C
EAS
20
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/µs
°C
Operating junction and storage temperature range
T
J, TSTG
- 55 to + 150
Document Number: 88987
Revision: 25-Jun-07
www.vishay.com
1
New Product
SS3P5L & SS3P6L
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
UNIT
at IF = 1.5 A
at IF = 3.0 A
0.464
0.542
-
Tj = 25 °C
0.60
Maximum instantaneous forward voltage (1)
VF
V
at IF = 1.5 A
at IF = 3.0 A
0.379
0.478
-
Tj = 125 °C
0.54
Tj = 25 °C
Tj = 125 °C
8.4
3.4
150
15
µA
mA
Maximum reverse current (1)
Typical junction capacitance
at rated VR
IR
at 4.0 V, 1 MHz
CJ
200
-
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS3P5L
SS3P6L
UNIT
(1)
RθJA
RθJL
65
3
Typical thermal resistance
°C/W
Note:
(1) Units mounted on recommended P.C.B. 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SS3P5L-E3/86A
SS3P5L-E3/87A
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.10
0.10
86A
87A
1500
6500
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
3.0
2.0
1.6
D = 0.8
D = 0.3
D = 0.5
Resistive or Inductive Load
D = 0.2
D = 0.1
2.5
2.0
1.5
1.0
D = 1.0
1.2
0.8
T
0.4
0
0.5
0
T
L
measured
D = tp/T tp
at the cathode band terminal
80
90
100
110
120
130
140
150
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Lead Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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Document Number: 88987
Revision: 25-Jun-07
New Product
SS3P5L & SS3P6L
Vishay General Semiconductor
100
1000
Tj = 150 °C
10
1
Tj
= 125 °C
100
T
j
= 25 °C
0.1
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
Junction to Ambient
Tj = 150 °C
10
1
0.1
Tj = 125 °C
10
0.01
0.001
Tj = 25 °C
0.0001
10
1
0.01
0.1
1
10
100
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Document Number: 88987
Revision: 25-Jun-07
www.vishay.com
3
New Product
SS3P5L & SS3P6L
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
0.026 (0.65) nom
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189
MIN.
(4.80)
0.189 (4.80)
0.173 (4.40)
0.186
MIN.
(4.72)
0.268
(6.80)
0.155 (3.94)
nom
0.75 nom
0.049 (1.24)
0.037 (0.94)
0.050
(1.27)
MIN.
0.084 (2.13) nom
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055
(1.40)
MIN.
Conform to JEDEC TO-277A
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Document Number: 88987
Revision: 25-Jun-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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