SS8P3CLHM3_A/I [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-277A,;
| 型号： | SS8P3CLHM3_A/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-277A, 功效 瞄准线 光电二极管 |
| 文件： | 总5页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS8P2CL, SS8P3CL
Vishay General Semiconductor
www.vishay.com
High Current Density Surface Mount
Schottky Barrier Rectifier
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
K
• Low thermal resistance
1
• Meets MSL level 1, per J-STD-020
2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-277A (SMPC)
Anode 1
K
Cathode
Anode 2
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling
diodes, DC/DC converters, and polarity protection
application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 4.0 A
20 V, 30 V
120 A
MECHANICAL DATA
VRRM
Case: TO-277A (SMPC)
IFSM
Molding compound meets UL 94 V-0 flammability rating
EAS
20 mJ
Base P/N-M3
-
halogen-free, RoHS-compliant, and
VF at IF = 4 A
TJ max.
0.41 V
commercial grade
150 °C
TO-277A
Single
Base P/NHM3
- halogen-free, RoHS-compliant and
Package
Diode variations
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8P2CL
S82C
20
SS8P3CL
S83C
30
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
V
A
total device
Maximum average forward rectified current (fig. 1)
per diode
8.0
4.0
Peak forward surge current 10 ms single half sine-wave
IFSM
120
20
A
superimposed on rated load
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
Operating junction and storage temperature range
EAS
mJ
°C
TJ, TSTG
-55 to +150
Revision: 10-Dec-14
Document Number: 89030
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS8P2CL, SS8P3CL
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.42
0.50
0.32
0.41
48
MAX.
-
UNIT
IF = 2.0 A
TA = 25 °C
IF = 4.0 A
IF = 2.0 A
IF = 4.0 A
0.54
-
Instantaneous forward voltage
per diode
(1)
VF
V
TA = 125 °C
0.45
300
30
TA = 25 °C
μA
mA
pF
(2)
Reverse current per diode
Rated VR
IR
TA = 125 °C
19
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
250
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS8P2C
SS8P3C
UNIT
°C/W
(1)
RJA
60
3
Typical thermal resistance per diode
RJL
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS8P3CL-M3/86A
SS8P3CL-M3/87A
SS8P3CLHM3/86A (1)
SS8P3CLHM3/87A (1)
SS8P3CLHM3_A/H (1)
SS8P3CLHM3_A/I (1)
0.10
0.10
0.10
0.10
0.10
0.10
86A
87A
86A
87A
H
1500
6500
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
I
Note
(1)
AEC-Q101 qualified
Revision: 10-Dec-14
Document Number: 89030
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS8P2CL, SS8P3CL
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
10
8
100
10
TA = 150 °C
Resistive or Inductive Load
T
A = 125 °C
6
4
2
1
0.1
TA = 25 °C
TL measured
at the Cathode Band Terminal
0.01
0.001
0
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
2.4
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
2.0
1.6
1.2
0.8
D = 1.0
T
0.4
0
D = tp/T
tp
100
0
1
2
3
4
5
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
TA = 150 °C
10
T
A = 125 °C
1
0.1
10
TA = 25 °C
Junction to Ambient
0.01
1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 10-Dec-14
Document Number: 89030
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS8P2CL, SS8P3CL
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 10-Dec-14
Document Number: 89030
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 08-Feb-17
Document Number: 91000
1
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