SS8P5CHM3_A/H [VISHAY]

DIODE SCHOTTKY 8A 50V TO277A;
SS8P5CHM3_A/H
型号: SS8P5CHM3_A/H
厂家: VISHAY    VISHAY
描述:

DIODE SCHOTTKY 8A 50V TO277A

文件: 总5页 (文件大小:95K)
中文:  中文翻译
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SS8P5C, SS8P6C  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface-Mount  
Dual Common Cathode Schottky Rectifier  
FEATURES  
eSMP® Series  
Available  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
K
• Low thermal resistance  
1
• Meets MSL level 1, per J-STD-020,  
2
LF maximum peak of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
SMPC (TO-277A)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Anode 1  
Anode 2  
K
Cathode  
TYPICAL APPLICATIONS  
LINKS TO ADDITIONAL RESOURCES  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, and  
polarity protection application.  
3
D
3
D
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMPC (TO-277A)  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 4.0 A  
50 V, 60 V  
120 A  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
VRRM  
commercial grade  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified  
IFSM  
EAS  
20 mJ  
VF at IF = 4 A  
TJ max.  
0.56 V  
(“_X” denotes revision code e.g. A, B,.....)  
150 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
Package  
SMPC (TO-277A)  
Common cathode  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS8P5C  
S85C  
50  
SS8P6C  
S86C  
60  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
V
A
total device  
Maximum average forward rectified current (fig. 1)  
per diode  
8.0  
4.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
120  
20  
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode  
Operating junction and storage temperature range  
EAS  
mJ  
°C  
TJ, TSTG  
-55 to +150  
Revision: 24-Apr-2020  
Document Number: 89028  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS8P5C, SS8P6C  
Vishay General Semiconductor  
www.vishay.com  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.55  
0.65  
0.48  
0.56  
2.5  
MAX.  
-
UNIT  
IF = 2.0 A  
TA = 25 °C  
IF = 4.0 A  
IF = 2.0 A  
IF = 4.0 A  
0.70  
-
Instantaneous forward voltage  
per diode  
(1)  
VF  
V
TA = 125 °C  
0.60  
50  
TA = 25 °C  
μA  
mA  
pF  
(2)  
Reverse current per diode  
Rated VR  
IR  
TA = 125 °C  
1.6  
10  
Typical junction capacitance per diode  
4.0 V, 1 MHz  
CJ  
160  
-
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
RθJA (1)  
RθJL  
SS8P5C  
SS8P6C  
UNIT  
°C/W  
60  
3
Typical thermal resistance per diode  
Note  
(1)  
Units mounted on recommended PCB 1 oz. pad layout  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
SS8P6C-M3/86A  
SS8P6C-M3/87A  
SS8P6CHM3_A/H (1)  
SS8P6CHM3_A/I (1)  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
0.10  
0.10  
0.10  
0.10  
86A  
87A  
H
1500  
6500  
1500  
6500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
I
Note  
(1)  
AEC-Q101 qualified  
Revision: 24-Apr-2020  
Document Number: 89028  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS8P5C, SS8P6C  
Vishay General Semiconductor  
www.vishay.com  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
Axis Title  
10 000  
1000  
100  
10000  
1000  
100  
10  
TJ = 150 °C  
Resistive or Inductive Load  
TJ = 125 °C  
TJ = 25 °C  
8
6
4
10  
1
0.1  
0.01  
0.001  
0.0001  
TL measured  
at the Cathode Band Terminal  
2
0
TJ = -40 °C  
10  
0
25  
50  
75  
100  
125  
150  
175  
10 20 30 40 50 60 70 80 90 100  
Percent of Rated Peak Reverse Voltage (%)  
Lead Temperature (°C)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode  
3.0  
1000  
D = 0.5 D = 0.8  
D = 0.3  
D = 0.2  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
2.5  
2.0  
1.5  
1.0  
D = 0.1  
D = 1.0  
100  
T
0.5  
0
D = tp/T  
tp  
10  
0
0.5 1.0 1.5  
2.0 2.5 3.0 3.5 4.0  
4.5  
0.1  
1
10  
100  
Average Forward Current (A)  
Reverse Voltage (V)  
Fig. 2 - Forward Power Loss Characteristics Per Diode  
Fig. 5 - Typical Junction Capacitance Per Diode  
100  
10  
10000  
1000  
100  
100  
TJ = 150 °C  
TJ = 125 °C  
1
10  
TJ = 25 °C  
TJ = -40 °C  
0.1  
0.01  
Junction to Ambient  
10  
1
0.01  
0.1  
1
10  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
t - Pulse Duration (s)  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
Fig. 6 - Typical Transient Thermal Impedance Per Diode  
Revision: 24-Apr-2020  
Document Number: 89028  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS8P5C, SS8P6C  
Vishay General Semiconductor  
www.vishay.com  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
SMPC (TO-277A)  
0.187 (4.75)  
0.175 (4.45)  
0.016 (0.40)  
0.006 (0.15)  
K
0.262 (6.65)  
0.250 (6.35)  
0.242 (6.15)  
0.238 (6.05)  
2
1
0.047 (1.20)  
0.039 (1.00)  
0.171 (4.35)  
0.167 (4.25)  
0.146 (3.70)  
0.134 (3.40)  
Mounting Pad Layout  
0.087 (2.20)  
0.075 (1.90)  
0.189 (4.80)  
MIN.  
0.189 (4.80)  
0.173 (4.40)  
0.186 (4.72)  
MIN.  
0.268  
(6.80)  
0.155 (3.94)  
NOM.  
0.030 (0.75) NOM.  
0.049 (1.24)  
0.037 (0.94)  
0.050 (1.27)  
MIN.  
0.084 (2.13) NOM.  
0.053 (1.35)  
0.041 (1.05)  
0.041  
(1.04)  
0.055 (1.40)  
MIN.  
®
Conform to JEDEC TO-277A  
Revision: 24-Apr-2020  
Document Number: 89028  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 09-Jul-2021  
Document Number: 91000  
1

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