SS8PH9HM3_A/H [VISHAY]

DIODE SCHOTTKY 90V 8A TO277A;
SS8PH9HM3_A/H
型号: SS8PH9HM3_A/H
厂家: VISHAY    VISHAY
描述:

DIODE SCHOTTKY 90V 8A TO277A

PC 高压 光电二极管
文件: 总5页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SS8PH9, SS8PH10  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface-Mount  
High Voltage Schottky Rectifier  
FEATURES  
eSMP® Series  
Available  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• High barrier technology, TJ = 175 °C maximum  
• Low leakage current  
K
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
SMPC (TO-277A)  
K
Anode 1  
Anode 2  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
TYPICAL APPLICATIONS  
LINKS TO ADDITIONAL RESOURCES  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, or  
polarity protection application.  
3
D
3
D
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMPC (TO-277A)  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
8.0 A  
90 V, 100 V  
150 A  
VRRM  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
IFSM  
commercial grade  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
EAS  
20 mJ  
VF at IF = 8.0 A  
IR  
0.720 V  
0.18 μA  
175 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
TJ max.  
Package  
SMPC (TO-277A)  
Single  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS8PH9  
8H9  
SS8PH10  
8H10  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
90  
100  
V
A
8.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Non-repetitive avalanche energy  
at IAS = 2.0 A, TJ = 25 °C  
EAS  
20  
mJ  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
Revision: 24-Apr-2020  
Document Number: 88989  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS8PH9, SS8PH10  
Vishay General Semiconductor  
www.vishay.com  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.769  
0.850  
0.634  
0.720  
0.18  
MAX.  
-
UNIT  
IF = 4.0 A  
TA = 25 °C  
IF = 8.0 A  
IF = 4.0 A  
IF = 8.0 A  
0.90  
-
(1)  
Instantaneous forward voltage  
VF  
V
TA = 125 °C  
0.76  
2.0  
300  
-
TA = 25 °C  
(2)  
Reverse current  
Rated VR  
IR  
μA  
pF  
TA = 125 °C  
110  
Typical junction capacitance  
4.0 V, 1 MHz  
CJ  
140  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
SS8PH9  
SS8PH10  
UNIT  
°C/W  
(1)  
RθJA  
65  
3
Typical thermal resistance  
RθJL  
Note  
(1)  
Units mounted on recommended PCB 1 oz. pad layout  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
SS8PH10-M3/86A  
SS8PH10-M3/87A  
SS8PH10HM3_A/H (1)  
SS8PH10HM3_A/I (1)  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
0.10  
0.10  
0.10  
0.10  
86A  
87A  
H
1500  
6500  
1500  
6500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
I
Note  
(1)  
AEC-Q101 qualified  
Revision: 24-Apr-2020  
Document Number: 88989  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS8PH9, SS8PH10  
Vishay General Semiconductor  
www.vishay.com  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
Axis Title  
10 000  
1000  
100  
10  
10000  
1000  
100  
10  
9
TJ = 175 °C  
Resistive or Inductive Load  
TJ = 150 °C  
TJ = 125 °C  
8
7
6
5
4
3
1
0.1  
TL measured  
TJ = 25 °C  
TJ = -40 °C  
at the Cathode Band Terminal  
2
1
0
0.01  
0.001  
10  
100 110  
120 130 140  
150  
160  
170 180  
10 20 30 40 50 60 70 80 90 100  
Percent of Rated Peak Reverse Voltage (%)  
Lead Temperature (°C)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 4 - Typical Reverse Characteristics  
8.0  
1000  
100  
10  
D = 0.5  
D = 0.8  
D = 0.3  
7.0  
6.0  
5.0  
D = 0.2  
D = 0.1  
4.0  
3.0  
D = 1.0  
T
2.0  
1.0  
0
D = tp/T  
tp  
0
1.0 2.0 3.0 4.0  
5.0 6.0 7.0 8.0  
9.0  
0.1  
1
10  
100  
Average Forward Current (A)  
Reverse Voltage (V)  
Fig. 2 - Forward Power Loss Characteristics  
Fig. 5 - Typical Junction Capacitance  
Axis Title  
100  
10  
10000  
1000  
100  
100  
10  
1
Junction to Ambient  
TJ = 175 °C  
TJ = 150 °C  
1
TJ = 125 °C  
0.1  
0.01  
TJ = 25 °C  
TJ = -40 °C  
10  
0.01  
0.1  
1
10  
100  
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
Fig. 6 - Typical Transient Thermal Impedance  
Revision: 24-Apr-2020  
Document Number: 88989  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SS8PH9, SS8PH10  
Vishay General Semiconductor  
www.vishay.com  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
SMPC (TO-277A)  
0.187 (4.75)  
0.175 (4.45)  
0.016 (0.40)  
0.006 (0.15)  
K
0.262 (6.65)  
0.250 (6.35)  
0.242 (6.15)  
0.238 (6.05)  
2
1
0.047 (1.20)  
0.039 (1.00)  
0.171 (4.35)  
0.167 (4.25)  
0.146 (3.70)  
0.134 (3.40)  
Mounting Pad Layout  
0.087 (2.20)  
0.075 (1.90)  
0.189 (4.80)  
MIN.  
0.189 (4.80)  
0.173 (4.40)  
0.186 (4.72)  
MIN.  
0.268  
(6.80)  
0.155 (3.94)  
NOM.  
0.030 (0.75) NOM.  
0.049 (1.24)  
0.037 (0.94)  
0.050 (1.27)  
MIN.  
0.084 (2.13) NOM.  
0.053 (1.35)  
0.041 (1.05)  
0.041  
(1.04)  
0.055 (1.40)  
MIN.  
®
Conform to JEDEC TO-277A  
Revision: 24-Apr-2020  
Document Number: 88989  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.  
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 09-Jul-2021  
Document Number: 91000  
1

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